Part Details for FDA16N50_F109 by onsemi
Overview of FDA16N50_F109 by onsemi
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for FDA16N50_F109
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
FDA16N50-F109
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Avnet Americas | Trans MOSFET N-CH 500V 16.5A 3-Pin(3+Tab) TO-3P(N) Rail - Rail/Tube (Alt: FDA16N50-F109) RoHS: Compliant Min Qty: 450 Package Multiple: 450 Lead time: 26 Weeks, 0 Days Container: Tube | 0 |
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$1.5146 / $1.6954 | Buy Now |
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Bristol Electronics | 2 |
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RFQ | ||
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Quest Components | 1 |
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$4.5000 | Buy Now | |
DISTI #
FDA16N50-F109
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Avnet Americas | Trans MOSFET N-CH 500V 16.5A 3-Pin(3+Tab) TO-3P(N) Rail - Rail/Tube (Alt: FDA16N50-F109) RoHS: Compliant Min Qty: 450 Package Multiple: 450 Lead time: 26 Weeks, 0 Days Container: Tube | 0 |
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$1.5146 / $1.6954 | Buy Now |
DISTI #
FDA16N50-F109
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Avnet Americas | Trans MOSFET N-CH 500V 16.5A 3-Pin(3+Tab) TO-3P(N) Rail - Rail/Tube (Alt: FDA16N50-F109) RoHS: Compliant Min Qty: 450 Package Multiple: 450 Lead time: 26 Weeks, 0 Days Container: Tube | 0 |
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$1.5146 / $1.6954 | Buy Now |
DISTI #
FDA16N50-F109
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Avnet Silica | Trans MOSFET N-CH 500V 16.5A 3-Pin(3+Tab) TO-3P(N) Rail (Alt: FDA16N50-F109) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 3 Weeks, 6 Days | Silica - 900 |
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Buy Now | |
DISTI #
FDA16N50-F109
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EBV Elektronik | Trans MOSFET N-CH 500V 16.5A 3-Pin(3+Tab) TO-3P(N) Rail (Alt: FDA16N50-F109) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 4 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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New Advantage Corporation | TO-3P/N-Channel UniFET MOSFET 500V, 16.5A, 380 mO RoHS: Compliant Min Qty: 1 Package Multiple: 30 | 720 |
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$2.0200 / $2.1700 | Buy Now |
Part Details for FDA16N50_F109
FDA16N50_F109 CAD Models
FDA16N50_F109 Part Data Attributes
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FDA16N50_F109
onsemi
Buy Now
Datasheet
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Compare Parts:
FDA16N50_F109
onsemi
N-Channel UniFETTM MOSFET 500V, 16.5A, 380 mΩ, TO-3PN 3L, 3600-RAIL
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ON SEMICONDUCTOR | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Manufacturer Package Code | TO3PN03A | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 4 Weeks | |
Samacsys Manufacturer | onsemi | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 780 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 500 V | |
Drain Current-Max (ID) | 16.5 A | |
Drain-source On Resistance-Max | 0.38 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 205 W | |
Pulsed Drain Current-Max (IDM) | 66 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | TIN | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for FDA16N50_F109
This table gives cross-reference parts and alternative options found for FDA16N50_F109. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDA16N50_F109, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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PHD83N03LT | 72A, 25V, 0.012ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, PLASTIC, SC-63, DPAK-3 | NXP Semiconductors | FDA16N50_F109 vs PHD83N03LT |
IXFH12N100F | Power Field-Effect Transistor, 12A I(D), 1000V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC PACKAGE-3 | IXYS Corporation | FDA16N50_F109 vs IXFH12N100F |
SSS7N60B | Power Field-Effect Transistor, 7A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220F, 3 PIN | Fairchild Semiconductor Corporation | FDA16N50_F109 vs SSS7N60B |
BUK465-60A | 41A, 60V, 0.038ohm, N-CHANNEL, Si, POWER, MOSFET | NXP Semiconductors | FDA16N50_F109 vs BUK465-60A |
FDP6035L | Power Field-Effect Transistor, 58A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Fairchild Semiconductor Corporation | FDA16N50_F109 vs FDP6035L |
FQA17N40 | Power Field-Effect Transistor, 17.2A I(D), 400V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PN, 3 PIN | Fairchild Semiconductor Corporation | FDA16N50_F109 vs FQA17N40 |
SPB80N06S2-07 | Power Field-Effect Transistor, 80A I(D), 55V, 0.0066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | FDA16N50_F109 vs SPB80N06S2-07 |
IXFH30N40Q | Power Field-Effect Transistor, 30A I(D), 400V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN | Littelfuse Inc | FDA16N50_F109 vs IXFH30N40Q |
STW80N06-10 | 80A, 60V, 0.01ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN | STMicroelectronics | FDA16N50_F109 vs STW80N06-10 |
IXFK35N50 | Power Field-Effect Transistor, 35A I(D), 500V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264, TO-264, 3 PIN | IXYS Corporation | FDA16N50_F109 vs IXFK35N50 |