Part Details for FDA16N50LDTU by onsemi
Overview of FDA16N50LDTU by onsemi
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for FDA16N50LDTU
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
01AC8511
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Newark | Uf 500V 380Mohm To3Pn/Tube Rohs Compliant: Yes |Onsemi FDA16N50LDTU Min Qty: 360 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$1.3900 / $1.4300 | Buy Now |
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Rochester Electronics | Power Field-Effect Transistor, N-Channel, MOSFET RoHS: Compliant Status: End of Life / Last Time Buy Min Qty: 1 | 2520 |
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$1.3600 / $1.6000 | Buy Now |
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DISTI #
FDA16N50LDTU
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TME | Transistor: N-MOSFET, unipolar, 500V, 3.3A, Idm: 66A, 205W, TO3PN Min Qty: 1 | 0 |
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$1.7700 / $2.6600 | RFQ |
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DISTI #
3615949
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Farnell | MOSFET'S - SINGLE RoHS: Compliant Min Qty: 360 Lead time: 51 Weeks, 1 Days Container: Tube | 0 |
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$1.9600 | Buy Now |
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Flip Electronics | Stock, ship today | 347 |
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$1.0900 | RFQ |
Part Details for FDA16N50LDTU
FDA16N50LDTU CAD Models
FDA16N50LDTU Part Data Attributes
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FDA16N50LDTU
onsemi
Buy Now
Datasheet
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Compare Parts:
FDA16N50LDTU
onsemi
Power MOSFET, N-Channel, UniFETTM, 500 V, 16.5 A, 380 mΩ, TO-3P, 360-TUBE
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| Pbfree Code | Yes | |
| Part Life Cycle Code | End Of Life | |
| Ihs Manufacturer | ONSEMI | |
| Manufacturer Package Code | 340BR | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Configuration | SINGLE | |
| Drain Current-Max (ID) | 16.5 A | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Operating Temperature-Max | 150 °C | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 205 W | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Alternate Parts for FDA16N50LDTU
This table gives cross-reference parts and alternative options found for FDA16N50LDTU. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDA16N50LDTU, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| PHD83N03LT | 72A, 25V, 0.012ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, PLASTIC, SC-63, DPAK-3 | NXP Semiconductors | FDA16N50LDTU vs PHD83N03LT |
| IXFH12N100F | Power Field-Effect Transistor, 12A I(D), 1000V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC PACKAGE-3 | IXYS Corporation | FDA16N50LDTU vs IXFH12N100F |
| SSS7N60B | Power Field-Effect Transistor, 7A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220F, 3 PIN | Fairchild Semiconductor Corporation | FDA16N50LDTU vs SSS7N60B |
| BUK465-60A | 41A, 60V, 0.038ohm, N-CHANNEL, Si, POWER, MOSFET | NXP Semiconductors | FDA16N50LDTU vs BUK465-60A |
| FDP6035L | Power Field-Effect Transistor, 58A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Fairchild Semiconductor Corporation | FDA16N50LDTU vs FDP6035L |
| FQA17N40 | Power Field-Effect Transistor, 17.2A I(D), 400V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PN, 3 PIN | Fairchild Semiconductor Corporation | FDA16N50LDTU vs FQA17N40 |
| SPB80N06S2-07 | Power Field-Effect Transistor, 80A I(D), 55V, 0.0066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | FDA16N50LDTU vs SPB80N06S2-07 |
| IXFH30N40Q | Power Field-Effect Transistor, 30A I(D), 400V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN | Littelfuse Inc | FDA16N50LDTU vs IXFH30N40Q |
| STW80N06-10 | 80A, 60V, 0.01ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN | STMicroelectronics | FDA16N50LDTU vs STW80N06-10 |
| IXFK35N50 | Power Field-Effect Transistor, 35A I(D), 500V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264, TO-264, 3 PIN | IXYS Corporation | FDA16N50LDTU vs IXFK35N50 |