Datasheets
FDA50N50 by:

N-Channel UniFETTM MOSFET 500V, 48A, 105mΩ, 3LD, TO3PN, PLASTIC, EIAJ SC-65, ISOLATED, 450/RAIL

Part Details for FDA50N50 by Fairchild Semiconductor Corporation

Results Overview of FDA50N50 by Fairchild Semiconductor Corporation

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Applications Energy and Power Systems Medical Imaging Robotics and Drones

FDA50N50 Information

FDA50N50 by Fairchild Semiconductor Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for FDA50N50

Part # Distributor Description Stock Price Buy
Win Source Electronics Trans MOSFET N-CH 500V 48A 3-Pin(3+Tab) TO-3P Tube / MOSFET N-CH 500V 48A TO-3P 417
  • 4 $16.2499
  • 8 $13.3333
  • 12 $12.9166
  • 16 $12.5000
  • 21 $12.0833
  • 28 $10.8333
$10.8333 / $16.2499 Buy Now

Part Details for FDA50N50

FDA50N50 CAD Models

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FDA50N50 Part Data Attributes

FDA50N50 Fairchild Semiconductor Corporation
Buy Now Datasheet
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FDA50N50 Fairchild Semiconductor Corporation N-Channel UniFETTM MOSFET 500V, 48A, 105mΩ, 3LD, TO3PN, PLASTIC, EIAJ SC-65, ISOLATED, 450/RAIL
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code TO-3PN
Package Description ROHS COMPLIANT, TO-3PN, 3 PIN
Pin Count 3
Manufacturer Package Code 3LD, TO3PN, PLASTIC, EIAJ SC-65, ISOLATED
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Avalanche Energy Rating (Eas) 1868 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V
Drain Current-Max (ID) 48 A
Drain-source On Resistance-Max 0.105 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 625 W
Pulsed Drain Current-Max (IDM) 192 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FDA50N50

This table gives cross-reference parts and alternative options found for FDA50N50. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDA50N50, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
STW45NM50 STMicroelectronics $8.2991 N-channel 500 V, 0.08 Ohm ty., 45 A MDmesh Power MOSFET in a TO-247 package FDA50N50 vs STW45NM50
STW45NM50FD STMicroelectronics Check for Price 45A, 500V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, ROHS COMPLIANT PACKAGE-3 FDA50N50 vs STW45NM50FD
Part Number Manufacturer Composite Price Description Compare
IRFR9214TRR International Rectifier Check for Price Power Field-Effect Transistor, 2.7A I(D), 250V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 FDA50N50 vs IRFR9214TRR
PSMN035-150P,127 NXP Semiconductors Check for Price N-channel TrenchMOS SiliconMAX standard level FET TO-220 3-Pin FDA50N50 vs PSMN035-150P,127
SFP9620 Rochester Electronics LLC Check for Price 3.5A, 200V, 1.5ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN FDA50N50 vs SFP9620
IRF9630 Samsung Semiconductor Check for Price Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN FDA50N50 vs IRF9630
IRF9630 Intersil Corporation Check for Price 6.5A, 200V, 0.8ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB FDA50N50 vs IRF9630
IRF9622 International Rectifier Check for Price Power Field-Effect Transistor, 3A I(D), 200V, 2.4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB FDA50N50 vs IRF9622
IRF9622 Rochester Electronics LLC Check for Price 3A, 200V, 2.4ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB FDA50N50 vs IRF9622
SPA07N60C3 Rochester Electronics LLC Check for Price 7.3A, 600V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, GREEN, PLASTIC, TO-220FP, 3 PIN FDA50N50 vs SPA07N60C3
PSMN030-150P,127 NXP Semiconductors Check for Price N-channel TrenchMOS SiliconMAX standard level FET TO-220 3-Pin FDA50N50 vs PSMN030-150P,127
SPP07N60S5 Rochester Electronics LLC Check for Price 7.3A, 600V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN FDA50N50 vs SPP07N60S5

FDA50N50 Related Parts

FDA50N50 Frequently Asked Questions (FAQ)

  • The maximum SOA for the FDA50N50 is typically defined by the voltage and current ratings, but it's essential to consult the datasheet and application notes for specific guidance. In general, the SOA is limited by the maximum voltage (VCE) and current (IC) ratings, as well as the power dissipation (PD) and thermal resistance (RθJA) of the device.

  • To ensure linear operation, the FDA50N50 should be biased in the active region, where the base-emitter voltage (VBE) is around 0.7V and the collector-emitter voltage (VCE) is greater than 1V. The base current (IB) should be limited to prevent saturation, and the collector current (IC) should be within the recommended range. Consult the datasheet and application notes for specific biasing recommendations.

  • The FDA50N50 has a maximum junction temperature (TJ) of 150°C. To ensure reliable operation, it's essential to provide adequate heat sinking and thermal management. This includes using a heat sink with a low thermal resistance, ensuring good thermal contact between the device and heat sink, and keeping the ambient temperature (TA) within the recommended range.

  • While the FDA50N50 is primarily designed for linear applications, it can be used in switching applications with careful consideration. However, the device's switching characteristics, such as the transition frequency (ft) and storage time (ts), may not be optimized for high-frequency switching. Consult the datasheet and application notes for specific guidance on using the FDA50N50 in switching applications.

  • The FDA50N50 is sensitive to electrostatic discharge (ESD). To protect the device, handle it with anti-static materials, use ESD-protected workstations, and follow proper ESD handling procedures. Additionally, consider using ESD protection devices, such as TVS diodes or ESD protection arrays, in the circuit design.

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