Datasheets
FDA50N50 by:

Power MOSFET, N-Channel, UniFETTM, 500V, 48A, 105mΩ, TO-3P, TO-3P-3L, 450-TUBE

Part Details for FDA50N50 by onsemi

Results Overview of FDA50N50 by onsemi

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Applications Energy and Power Systems Medical Imaging Robotics and Drones

FDA50N50 Information

FDA50N50 by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for FDA50N50

Part # Distributor Description Stock Price Buy
DISTI # 31Y1334
Newark Mosfet, N-Ch, 500V, 48A, To-3Pn-3, Channel Type:N Channel, Drain Source Voltage Vds:500V, Continuous Drain Current Id:48A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:5V, Msl:- Rohs Compliant: Yes |Onsemi FDA50N50 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 0
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DISTI # FDA50N50
Avnet Silica Trans MOSFET NCH 500V 48A 3Pin3Tab TO3P Rail (Alt: FDA50N50) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 143 Weeks, 0 Days Silica - 0
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DISTI # FDA50N50
EBV Elektronik Trans MOSFET NCH 500V 48A 3Pin3Tab TO3P Rail (Alt: FDA50N50) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 143 Weeks, 0 Days EBV - 0
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Part Details for FDA50N50

FDA50N50 CAD Models

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FDA50N50 Part Data Attributes

FDA50N50 onsemi
Buy Now Datasheet
Compare Parts:
FDA50N50 onsemi Power MOSFET, N-Channel, UniFETTM, 500V, 48A, 105mΩ, TO-3P, TO-3P-3L, 450-TUBE
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer ONSEMI
Part Package Code TO-3P-3L
Package Description TO-3PN, 3 PIN
Manufacturer Package Code 340BZ
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 4 Weeks
Samacsys Manufacturer onsemi
Avalanche Energy Rating (Eas) 1868 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V
Drain Current-Max (ID) 48 A
Drain-source On Resistance-Max 0.105 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 625 W
Pulsed Drain Current-Max (IDM) 192 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FDA50N50

This table gives cross-reference parts and alternative options found for FDA50N50. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDA50N50, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
STW45NM50 STMicroelectronics $8.2991 N-channel 500 V, 0.08 Ohm ty., 45 A MDmesh Power MOSFET in a TO-247 package FDA50N50 vs STW45NM50
STW45NM50FD STMicroelectronics Check for Price 45A, 500V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, ROHS COMPLIANT PACKAGE-3 FDA50N50 vs STW45NM50FD
Part Number Manufacturer Composite Price Description Compare
IRF9622 Samsung Semiconductor Check for Price Power Field-Effect Transistor, 3A I(D), 200V, 2.4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN FDA50N50 vs IRF9622
TK20V60W Toshiba America Electronic Components Check for Price Transistors (Bipolar/MOSFETs/IGBTs) - MOSFETs - Power MOSFET - Nch 500V<VDSS≤700V FDA50N50 vs TK20V60W
FDH50N50_NL Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 48A I(D), 500V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, LEAD FREE PACKAGE-3 FDA50N50 vs FDH50N50_NL
SGSP461 STMicroelectronics Check for Price 20A, 100V, 0.15ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218 FDA50N50 vs SGSP461
SGSP462 STMicroelectronics Check for Price 25A, 80V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218 FDA50N50 vs SGSP462
SML50B26F TT Electronics Power and Hybrid / Semelab Limited Check for Price 26A, 500V, 0.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD FDA50N50 vs SML50B26F
SGSP492 STMicroelectronics Check for Price 40A, 50V, 0.033ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218 FDA50N50 vs SGSP492
SMP50N05 Texas Instruments Check for Price 50A, 50V, 0.028ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN FDA50N50 vs SMP50N05
VP1120N5 Supertex Inc Check for Price Power Field-Effect Transistor, 1.8A I(D), 200V, 5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN FDA50N50 vs VP1120N5
IPI80N06S2L11XK Infineon Technologies AG Check for Price Power Field-Effect Transistor, 80A I(D), 55V, 0.0147ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN FDA50N50 vs IPI80N06S2L11XK

FDA50N50 Related Parts

FDA50N50 Frequently Asked Questions (FAQ)

  • A 2-layer PCB with a thermal relief pattern on the bottom layer and a solid ground plane on the top layer is recommended. This helps to dissipate heat efficiently and reduce thermal resistance.

  • Ensure that the device is operated within the recommended temperature range (up to 150°C). Use a heat sink or thermal interface material to improve heat dissipation. Also, consider derating the device's power handling at high temperatures.

  • The maximum allowed voltage transient is 60V for a duration of 50ns. Exceeding this may cause damage to the device.

  • Use ESD protection devices such as TVS diodes or ESD suppressors on the input and output pins. Handle the device by the body or use an ESD wrist strap to prevent static buildup.

  • A gate drive voltage of 10-15V and a current of 1-2A is recommended for optimal switching performance. Ensure that the gate drive circuit is designed to provide a fast rise and fall time (<10ns) to minimize switching losses.

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