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Part Details for FDA59N25 by onsemi
Overview of FDA59N25 by onsemi
- Distributor Offerings: (9 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for FDA59N25
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
04M9075
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Newark | Mosfet, N, To-3P, Channel Type:N Channel, Drain Source Voltage Vds:250V, Continuous Drain Current Id:59A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:5V, Power Dissipation:392W, Msl:-Rohs Compliant: Yes |Onsemi FDA59N25 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 5424 |
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$2.8400 / $4.0300 | Buy Now |
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DISTI #
27AC5653
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Newark | Uf 250V 49Mohm To3Pn Rohs Compliant: Yes |Onsemi FDA59N25 RoHS: Compliant Min Qty: 30 Package Multiple: 1 Date Code: 0 Container: Bulk | 260 |
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$2.1400 / $3.2500 | Buy Now |
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DISTI #
FDA59N25
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Avnet Americas | Trans MOSFET N-CH 250V 59A 3-Pin(3+Tab) TO-3P(N) Rail - Rail/Tube (Alt: FDA59N25) RoHS: Compliant Min Qty: 30 Package Multiple: 1 Lead time: 12 Weeks, 0 Days Container: Tube | 260 |
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$1.5585 / $1.9404 | Buy Now |
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DISTI #
FDA59N25
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TME | Transistor: N-MOSFET, unipolar, 250V, 35A, Idm: 236A, 392W, TO3PN Min Qty: 1 | 0 |
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$2.2700 / $3.2800 | RFQ |
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DISTI #
FDA59N25
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Richardson RFPD | POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 450 | 0 |
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$1.6600 | Buy Now |
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DISTI #
FDA59N25
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Avnet Silica | Trans MOSFET N-CH 250V 59A 3-Pin(3+Tab) TO-3P(N) Rail (Alt: FDA59N25) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 13 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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DISTI #
C1S226600424271
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Chip1Stop | Trans MOSFET N-CH 250V 59A 3-Pin(3+Tab) TO-3PN Tube RoHS: Compliant Container: Tube | 49 |
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$2.0400 / $2.4600 | Buy Now |
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DISTI #
FDA59N25
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EBV Elektronik | Trans MOSFET N-CH 250V 59A 3-Pin(3+Tab) TO-3P(N) Rail (Alt: FDA59N25) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 14 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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LCSC | 250V 59A 392W 49m10V29.5A 3V250uA 1 N-channel TO-3PN-3 MOSFETs ROHS | 11 |
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$2.5852 / $3.8755 | Buy Now |
Part Details for FDA59N25
FDA59N25 CAD Models
FDA59N25 Part Data Attributes
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FDA59N25
onsemi
Buy Now
Datasheet
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Compare Parts:
FDA59N25
onsemi
Power MOSFET, N-Channel, UniFETTM, 250V, 59A, 49mΩ, TO-3P, TO-3P-3L, 450-TUBE
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| Pbfree Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | TO-3P-3L | |
| Package Description | TO-3P, 3 PIN | |
| Manufacturer Package Code | 340BZ | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 12 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Additional Feature | FAST SWITCHING | |
| Avalanche Energy Rating (Eas) | 1458 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 250 V | |
| Drain Current-Max (ID) | 59 A | |
| Drain-source On Resistance-Max | 0.049 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 392 W | |
| Pulsed Drain Current-Max (IDM) | 236 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FDA59N25
This table gives cross-reference parts and alternative options found for FDA59N25. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDA59N25, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IXTQ64N25P | IXYS Corporation | Check for Price | Power Field-Effect Transistor, 64A I(D), 250V, 0.049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | FDA59N25 vs IXTQ64N25P |
| IPI200N25N3G | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 64A I(D), 250V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN | FDA59N25 vs IPI200N25N3G |
| 2SK3779-01R | Fuji Electric Co Ltd | Check for Price | Power Field-Effect Transistor, 59A I(D), 250V, 0.053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | FDA59N25 vs 2SK3779-01R |
| IXTT64N25P | Littelfuse Inc | $6.3375 | Power Field-Effect Transistor, 64A I(D), 250V, 0.049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN | FDA59N25 vs IXTT64N25P |
| IXTT64N25P | IXYS Corporation | $3.2660 | Power Field-Effect Transistor, 64A I(D), 250V, 0.049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN | FDA59N25 vs IXTT64N25P |
| IPB64N25S3-20 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 64A I(D), 250V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3/2 PIN | FDA59N25 vs IPB64N25S3-20 |
| IXTK62N25 | IXYS Corporation | Check for Price | Power Field-Effect Transistor, 62A I(D), 250V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264AA, 3 PIN | FDA59N25 vs IXTK62N25 |
| IPP220N25NFD | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 61A I(D), 250V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | FDA59N25 vs IPP220N25NFD |
| IPB200N25N3G | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 64A I(D), 250V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | FDA59N25 vs IPB200N25N3G |
| IXTQ64N25P | Littelfuse Inc | $5.6701 | Power Field-Effect Transistor, 64A I(D), 250V, 0.049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | FDA59N25 vs IXTQ64N25P |