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Transistors / Power Field-Effect Transistors / FDA59N25
Datasheets
FDA59N25 by:

Power MOSFET, N-Channel, UniFETTM, 250V, 59A, 49mΩ, TO-3P, TO-3P-3L, 450-TUBE

Part Details for FDA59N25 by onsemi

Results Overview of FDA59N25 by onsemi

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

FDA59N25 Information

FDA59N25 by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for FDA59N25

Part # Distributor Description Stock Price Buy
DISTI # 04M9075
Newark Mosfet, N, To-3P, Channel Type:N Channel, Drain Source Voltage Vds:250V, Continuous Drain Current Id:59A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:5V, Power Dissipation:392W, Msl:-Rohs Compliant: Yes |Onsemi FDA59N25 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 6975
  • 1 $4.2400
  • 10 $3.4900
  • 25 $3.1200
  • 50 $2.7300
  • 100 $2.6600
  • 250 $2.5900
  • 900 $2.4900
$2.4900 / $4.2400 Buy Now
DISTI # 27AC5653
Newark Uf 250V 49Mohm To3Pn Rohs Compliant: Yes |Onsemi FDA59N25 RoHS: Compliant Min Qty: 30 Package Multiple: 1 Date Code: 0 Container: Bulk 260
  • 25 $3.2500
  • 50 $2.9100
  • 100 $2.5700
  • 250 $2.5400
  • 900 $2.1400
$2.1400 / $3.2500 Buy Now
DISTI # FDA59N25
Avnet Americas Trans MOSFET N-CH 250V 59A 3-Pin(3+Tab) TO-3P(N) Rail - Rail/Tube (Alt: FDA59N25) RoHS: Compliant Min Qty: 30 Package Multiple: 1 Lead time: 12 Weeks, 0 Days Container: Tube 260
  • 30 $1.9110
  • 40 $1.9013
  • 70 $1.8915
  • 150 $1.7409
  • 300 $1.7318
$1.7318 / $1.9110 Buy Now
DISTI # FDA59N25
TME Transistor: N-MOSFET, unipolar, 250V, 35A, Idm: 236A, 392W, TO3PN Min Qty: 1 0
  • 1 $3.1800
  • 10 $2.6000
  • 30 $2.2800
  • 120 $2.2100
$2.2100 / $3.1800 RFQ
DISTI # FDA59N25
Richardson RFPD POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 450 0
  • 450 $1.6600
$1.6600 Buy Now
DISTI # FDA59N25
Avnet Silica Trans MOSFET N-CH 250V 59A 3-Pin(3+Tab) TO-3P(N) Rail (Alt: FDA59N25) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 13 Weeks, 0 Days Silica - 0
Buy Now
DISTI # C1S226600424271
Chip One Stop Trans MOSFET N-CH 250V 59A 3-Pin(3+Tab) TO-3PN Tube RoHS: Compliant Container: Tube 49
  • 1 $2.9900
  • 10 $2.5200
$2.5200 / $2.9900 Buy Now
DISTI # FDA59N25
EBV Elektronik Trans MOSFET N-CH 250V 59A 3-Pin(3+Tab) TO-3P(N) Rail (Alt: FDA59N25) RoHS: Compliant Min Qty: 30 Package Multiple: 30 Lead time: 14 Weeks, 0 Days EBV - 0
Buy Now
LCSC 250V 59A 392W 49m10V29.5A 3V 1 N-channel TO-3PN-3 MOSFETs ROHS 11
  • 1 $4.0406
  • 10 $3.4608
  • 30 $3.1165
  • 90 $2.7692
  • 510 $2.6086
  • 990 $2.5351
$2.5351 / $4.0406 Buy Now

Part Details for FDA59N25

FDA59N25 CAD Models

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FDA59N25 Part Data Attributes

Parametric Data
FDA59N25 onsemi
Buy Now Datasheet
Compare Parts:
FDA59N25 onsemi Power MOSFET, N-Channel, UniFETTM, 250V, 59A, 49mΩ, TO-3P, TO-3P-3L, 450-TUBE
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ONSEMI
Part Package Code TO-3P-3L
Package Description TO-3P, 3 PIN
Manufacturer Package Code 340BZ
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 12 Weeks
Samacsys Manufacturer onsemi
Additional Feature FAST SWITCHING
Avalanche Energy Rating (Eas) 1458 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 250 V
Drain Current-Max (ID) 59 A
Drain-source On Resistance-Max 0.049 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 392 W
Pulsed Drain Current-Max (IDM) 236 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FDA59N25

This table gives cross-reference parts and alternative options found for FDA59N25. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDA59N25, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IXTQ64N25P Littelfuse Inc $5.6701 Power Field-Effect Transistor, 64A I(D), 250V, 0.049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN FDA59N25 vs IXTQ64N25P
Part Number Manufacturer Composite Price Description Compare
IPP200N25N3GXKSA1 Infineon Technologies AG $3.8186 Power Field-Effect Transistor, 64A I(D), 250V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN FDA59N25 vs IPP200N25N3GXKSA1
IXFK60N25Q IXYS Corporation Check for Price Power Field-Effect Transistor, 60A I(D), 250V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264, TO-264, 3 PIN FDA59N25 vs IXFK60N25Q
IPB64N25S320ATMA1 Infineon Technologies AG $3.2653 Power Field-Effect Transistor, 64A I(D), 250V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263-3/2 FDA59N25 vs IPB64N25S320ATMA1
2SK3779-01R Fuji Electric Co Ltd Check for Price Power Field-Effect Transistor, 59A I(D), 250V, 0.053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, FDA59N25 vs 2SK3779-01R
IPB200N25N3G Infineon Technologies AG Check for Price Power Field-Effect Transistor, 64A I(D), 250V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN FDA59N25 vs IPB200N25N3G
IXTT64N25P IXYS Corporation $3.1788 Power Field-Effect Transistor, 64A I(D), 250V, 0.049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN FDA59N25 vs IXTT64N25P
FQA62N25C onsemi $4.5096 Power MOSFET, N-Channel, QFET®, 250 V, 62 A, 35 mΩ, TO-3P, TO-3P-3L, 450-TUBE FDA59N25 vs FQA62N25C
IPI200N25N3GAKSA1 Infineon Technologies AG $3.0634 Power Field-Effect Transistor, 64A I(D), 250V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN FDA59N25 vs IPI200N25N3GAKSA1
IPB64N25S3-20 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 64A I(D), 250V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3/2 PIN FDA59N25 vs IPB64N25S3-20
IXFH60N25Q IXYS Corporation Check for Price Power Field-Effect Transistor, 60A I(D), 250V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN FDA59N25 vs IXFH60N25Q

FDA59N25 Related Parts

FDA59N25 Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the FDA59N25 is -40°C to 150°C.

  • To ensure proper biasing, the FDA59N25 requires a minimum of 10mA of quiescent current (IQ) and a supply voltage (VCC) between 3.0V and 5.5V.

  • To minimize EMI, it is recommended to use a multi-layer PCB with a solid ground plane, keep the input and output traces short and away from each other, and use a common-mode choke or ferrite bead on the input lines.

  • Yes, the FDA59N25 can be used in a switching regulator application, but it requires additional external components and careful design consideration to ensure stability and minimize ringing.

  • To protect the FDA59N25 from overvoltage and overcurrent conditions, it is recommended to use a voltage regulator with overvoltage protection (OVP) and overcurrent protection (OCP) features, as well as a fuse or PTC resettable fuse.

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