There are no models available for this part yet.
Overview of FDB13AN06A0 by Fairchild Semiconductor Corporation
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 1 listing )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Price & Stock for FDB13AN06A0 by Fairchild Semiconductor Corporation
Part # | Manufacturer | Description | Stock | Price | Buy | ||
---|---|---|---|---|---|---|---|
Bristol Electronics | 11 |
|
RFQ |
CAD Models for FDB13AN06A0 by Fairchild Semiconductor Corporation
Part Data Attributes for FDB13AN06A0 by Fairchild Semiconductor Corporation
|
|
---|---|
Pbfree Code
|
Yes
|
Rohs Code
|
Yes
|
Part Life Cycle Code
|
Transferred
|
Ihs Manufacturer
|
FAIRCHILD SEMICONDUCTOR CORP
|
Part Package Code
|
D2PAK
|
Package Description
|
TO-263AB, 3 PIN
|
Pin Count
|
2
|
Manufacturer Package Code
|
2LD,TO263, SURFACE MOUNT
|
Reach Compliance Code
|
not_compliant
|
ECCN Code
|
EAR99
|
HTS Code
|
8541.29.00.95
|
Avalanche Energy Rating (Eas)
|
56 mJ
|
Case Connection
|
DRAIN
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min
|
60 V
|
Drain Current-Max (ID)
|
62 A
|
Drain-source On Resistance-Max
|
0.0135 Ω
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code
|
TO-263AB
|
JESD-30 Code
|
R-PSSO-G2
|
JESD-609 Code
|
e3
|
Moisture Sensitivity Level
|
1
|
Number of Elements
|
1
|
Number of Terminals
|
2
|
Operating Mode
|
ENHANCEMENT MODE
|
Operating Temperature-Max
|
175 °C
|
Package Body Material
|
PLASTIC/EPOXY
|
Package Shape
|
RECTANGULAR
|
Package Style
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel)
|
260
|
Polarity/Channel Type
|
N-CHANNEL
|
Power Dissipation-Max (Abs)
|
115 W
|
Qualification Status
|
Not Qualified
|
Surface Mount
|
YES
|
Terminal Finish
|
MATTE TIN
|
Terminal Form
|
GULL WING
|
Terminal Position
|
SINGLE
|
Time@Peak Reflow Temperature-Max (s)
|
30
|
Transistor Application
|
SWITCHING
|
Transistor Element Material
|
SILICON
|
Alternate Parts for FDB13AN06A0
This table gives cross-reference parts and alternative options found for FDB13AN06A0. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDB13AN06A0, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
NDB706AL | 75A, 60V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | Texas Instruments | FDB13AN06A0 vs NDB706AL |
IPB80N06S2LH5ATMA1 | Power Field-Effect Transistor, 80A I(D), 55V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | FDB13AN06A0 vs IPB80N06S2LH5ATMA1 |
STH8NA60FI | 5A, 600V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218, ISOWATT218, 3 PIN | STMicroelectronics | FDB13AN06A0 vs STH8NA60FI |
IXFH14N80 | Power Field-Effect Transistor, 14A I(D), 800V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN | Littelfuse Inc | FDB13AN06A0 vs IXFH14N80 |
IXFH7N90Q | Power Field-Effect Transistor, 7A I(D), 900V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC PACKAGE-3 | Littelfuse Inc | FDB13AN06A0 vs IXFH7N90Q |
STW80NF55-06 | 80A, 55V, 0.0065ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC, TO-247, 3 PIN | STMicroelectronics | FDB13AN06A0 vs STW80NF55-06 |
STP19N06 | 19A, 60V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN | STMicroelectronics | FDB13AN06A0 vs STP19N06 |
STD5NE10T4 | 5A, 100V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, DPAK-3 | STMicroelectronics | FDB13AN06A0 vs STD5NE10T4 |
NDB705BEL | TRANSISTOR 70 A, 50 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, FET General Purpose Power | National Semiconductor Corporation | FDB13AN06A0 vs NDB705BEL |
STD12N05-1 | 12A, 50V, 0.15ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA, TO-251, IPAK-3 | STMicroelectronics | FDB13AN06A0 vs STD12N05-1 |
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