Transistors
FDB13AN06A0
Description: Power Field-Effect Transistor, 62A I(D), 60V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263AB, 3 PIN

Overview of FDB13AN06A0 by Fairchild Semiconductor Corporation

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Price & Stock for FDB13AN06A0 by Fairchild Semiconductor Corporation

Part # Manufacturer Description Stock Price Buy
Bristol Electronics   11
RFQ

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Part Data Attributes for FDB13AN06A0 by Fairchild Semiconductor Corporation

FDB13AN06A0
Fairchild Semiconductor Corporation
-
-
Pbfree Code
Yes
Rohs Code
Yes
Part Life Cycle Code
Transferred
Ihs Manufacturer
FAIRCHILD SEMICONDUCTOR CORP
Part Package Code
D2PAK
Package Description
TO-263AB, 3 PIN
Pin Count
2
Manufacturer Package Code
2LD,TO263, SURFACE MOUNT
Reach Compliance Code
not_compliant
ECCN Code
EAR99
HTS Code
8541.29.00.95
Avalanche Energy Rating (Eas)
56 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
60 V
Drain Current-Max (ID)
62 A
Drain-source On Resistance-Max
0.0135 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-263AB
JESD-30 Code
R-PSSO-G2
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
1
Number of Terminals
2
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
115 W
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
MATTE TIN
Terminal Form
GULL WING
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
30
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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  1. FDB13AN06A0
    Fairchild Semiconductor Corporation
    Power Field-Effect Transistor, 62A I(D), 60V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263AB, 3 PIN
    VS

Alternate Parts for FDB13AN06A0

This table gives cross-reference parts and alternative options found for FDB13AN06A0. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDB13AN06A0, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
NDB706AL 75A, 60V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB Texas Instruments FDB13AN06A0 vs NDB706AL
IPB80N06S2LH5ATMA1 Power Field-Effect Transistor, 80A I(D), 55V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN Infineon Technologies AG FDB13AN06A0 vs IPB80N06S2LH5ATMA1
STH8NA60FI 5A, 600V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218, ISOWATT218, 3 PIN STMicroelectronics FDB13AN06A0 vs STH8NA60FI
IXFH14N80 Power Field-Effect Transistor, 14A I(D), 800V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN Littelfuse Inc FDB13AN06A0 vs IXFH14N80
IXFH7N90Q Power Field-Effect Transistor, 7A I(D), 900V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC PACKAGE-3 Littelfuse Inc FDB13AN06A0 vs IXFH7N90Q
STW80NF55-06 80A, 55V, 0.0065ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC, TO-247, 3 PIN STMicroelectronics FDB13AN06A0 vs STW80NF55-06
STP19N06 19A, 60V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN STMicroelectronics FDB13AN06A0 vs STP19N06
STD5NE10T4 5A, 100V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, DPAK-3 STMicroelectronics FDB13AN06A0 vs STD5NE10T4
NDB705BEL TRANSISTOR 70 A, 50 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, FET General Purpose Power National Semiconductor Corporation FDB13AN06A0 vs NDB705BEL
STD12N05-1 12A, 50V, 0.15ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA, TO-251, IPAK-3 STMicroelectronics FDB13AN06A0 vs STD12N05-1

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