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Transistors / Power Field-Effect Transistors / FDB28N30TM
Datasheets
FDB28N30TM by:

Power MOSFET, N-Channel, UniFETTM, 300V, 28A, 129mΩ, D2PAK, D2PAK-3 / TO-263-2, 800-REEL

Part Details for FDB28N30TM by onsemi

Results Overview of FDB28N30TM by onsemi

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

FDB28N30TM Information

FDB28N30TM by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for FDB28N30TM

Part # Distributor Description Stock Price Buy
DISTI # 31Y1337
Newark Mosfet Transistor, N Channel, 28 A, 300 V, 108 Mohm, 10 V, 5 V Rohs Compliant: Yes |Onsemi FDB28N30TM RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape 1624
  • 1 $2.4300
  • 10 $1.7600
  • 25 $1.6200
  • 50 $1.4800
  • 100 $1.3400
  • 250 $1.3300
  • 500 $1.3200
  • 1,600 $1.2300
$1.2300 / $2.4300 Buy Now
DISTI # 78M0907
Newark N Channel Mosfet, 300V, 28A, D2-Pak, Full Reel, Channel Type:N Channel, Drain Source Voltage Vds:300V, Continuous Drain Current Id:28A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:5Vrohs Compliant: Yes |Onsemi FDB28N30TM RoHS: Compliant Min Qty: 800 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 1 $1.1900
  • 3,000 $1.1200
  • 6,000 $1.0600
  • 12,000 $0.9540
  • 18,000 $0.9180
  • 30,000 $0.8830
$0.8830 / $1.1900 Buy Now
DISTI # 27AC5658
Newark Uf 300V 129Mohm D2Pak Rohs Compliant: Yes |Onsemi FDB28N30TM RoHS: Compliant Min Qty: 800 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 1 $1.1900
  • 3,000 $1.1200
  • 6,000 $1.0600
  • 12,000 $0.9540
  • 18,000 $0.9180
  • 30,000 $0.8830
$0.8830 / $1.1900 Buy Now
DISTI # FDB28N30TM
Avnet Americas Trans MOSFET N-CH 300V 28A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: FDB28N30TM) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 11 Weeks, 0 Days Container: Reel 800
  • 800 $0.9035
  • 1,600 $0.8507
  • 3,200 $0.8406
  • 4,800 $0.8366
  • 6,400 $0.8307
$0.8307 / $0.9035 Buy Now
Rochester Electronics Power Field-Effect Transistor, 28A, 300V, 0.129ohm, N-Channel, MOSFET RoHS: Not Compliant Status: Active Min Qty: 1 20
  • 1 $0.9807
  • 25 $0.9611
  • 100 $0.9219
  • 500 $0.8826
  • 1,000 $0.8336
$0.8336 / $0.9807 Buy Now
DISTI # FDB28N30TM
TME Transistor: N-MOSFET, unipolar, 300V, 28A, 250W, D2PAK Min Qty: 1 613
  • 1 $2.0100
  • 10 $1.4600
  • 100 $1.3500
  • 200 $1.1600
  • 500 $1.1200
  • 800 $1.1100
$1.1100 / $2.0100 Buy Now
DISTI # FDB28N30TM
Richardson RFPD POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 800 0
  • 800 $0.8800
$0.8800 Buy Now
DISTI # FDB28N30TM
Avnet Silica Trans MOSFET N-CH 300V 28A 3-Pin(2+Tab) D2PAK T/R (Alt: FDB28N30TM) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 12 Weeks, 0 Days Silica - 0
Buy Now
DISTI # FDB28N30TM
EBV Elektronik Trans MOSFET N-CH 300V 28A 3-Pin(2+Tab) D2PAK T/R (Alt: FDB28N30TM) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 13 Weeks, 0 Days EBV - 0
Buy Now

Part Details for FDB28N30TM

FDB28N30TM CAD Models

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FDB28N30TM Part Data Attributes

Parametric Data
FDB28N30TM onsemi
Buy Now Datasheet
Compare Parts:
FDB28N30TM onsemi Power MOSFET, N-Channel, UniFETTM, 300V, 28A, 129mΩ, D2PAK, D2PAK-3 / TO-263-2, 800-REEL
Pbfree Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ONSEMI
Part Package Code D2PAK-3 / TO-263-2
Package Description D2PAK-3
Manufacturer Package Code 418AJ
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 11 Weeks
Samacsys Manufacturer onsemi
Avalanche Energy Rating (Eas) 588 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 300 V
Drain Current-Max (ID) 28 A
Drain-source On Resistance-Max 0.129 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 245
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 250 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

FDB28N30TM Related Parts

FDB28N30TM Frequently Asked Questions (FAQ)

  • The maximum operating frequency of the FDB28N30TM is 100 kHz, but it can be operated at higher frequencies with reduced performance.

  • To ensure proper biasing, the gate-source voltage (Vgs) should be between 2V and 5V, and the drain-source voltage (Vds) should be between 10V and 30V. Additionally, a gate resistor (Rg) should be used to limit the gate current.

  • The maximum power dissipation of the FDB28N30TM is 120W, but this can be increased with proper heat sinking and thermal management.

  • To protect the FDB28N30TM from overvoltage and overcurrent, use a voltage regulator to limit the drain-source voltage (Vds) and a current sense resistor to monitor the drain current (Id). Additionally, consider using a protection circuit with a zener diode and a current-limiting resistor.

  • For optimal performance, use a 2-layer or 4-layer PCB with a solid ground plane and a separate power plane. Keep the gate and source pins as close as possible to minimize parasitic inductance. Use a Kelvin connection for the source pin to reduce voltage drops.

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