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Transistors / Power Field-Effect Transistors / FDB33N25TM
Datasheets
FDB33N25TM by:

Power MOSFET, N-Channel, UniFETTM, 250 V, 33 A, 94 mΩ, D2PAK, 800-REEL

Part Details for FDB33N25TM by onsemi

Overview of FDB33N25TM by onsemi

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for FDB33N25TM

Part # Distributor Description Stock Price Buy
DISTI # 95W3149
Newark Mosfet Transistor, N Channel, 33 A, 250 V, 0.077 Ohm, 10 V, 3 V Rohs Compliant: Yes |Onsemi FDB33N25TM RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 1840
  • 1 $2.5100
  • 10 $2.1200
  • 100 $1.7300
  • 500 $1.6000
  • 1,600 $1.3100
$1.3100 / $2.5100 Buy Now
DISTI # 84W8845
Newark Mosfet, N Channel, 250V, 0.077Ohm, 33A, To-263-3, Channel Type:N Channel, Drain Source Voltage Vds:250V, Continuous Drain Current Id:33A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Power Dissipation:235W Rohs Compliant: Yes |Onsemi FDB33N25TM RoHS: Compliant Min Qty: 800 Package Multiple: 1 Date Code: 0 Container: Cut Tape 0
  • 100 $1.6000
$1.6000 Buy Now
DISTI # 04M9081
Newark Mosfet, N Channel, 250V, 0.077Ohm, 33A, To-263-3, Full Reel, Channel Type:N Channel, Drain Source Voltage Vds:250V, Continuous Drain Current Id:33A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Power Dissipation:235W Rohs Compliant: Yes |Onsemi FDB33N25TM RoHS: Compliant Min Qty: 800 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 1 $1.2600
  • 3,000 $1.1800
  • 6,000 $1.1200
  • 12,000 $1.0100
  • 18,000 $0.9690
  • 30,000 $0.9310
$0.9310 / $1.2600 Buy Now
DISTI # 25AC9519
Newark 250V, N-Ch, Unifet Mosfet Rohs Compliant: Yes |Onsemi FDB33N25TM RoHS: Compliant Min Qty: 800 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 1 $0.9560
$0.9560 Buy Now
DISTI # FDB33N25TM
Avnet Americas Trans MOSFET N-CH 250V 33A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: FDB33N25TM) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 22 Weeks, 0 Days Container: Reel 5600
  • 800 $0.9555
$0.9555 Buy Now
DISTI # FDB33N25TM
Avnet Americas Trans MOSFET N-CH 250V 33A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: FDB33N25TM) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Reel 1 Partner Stock
RFQ
DISTI # FDB33N25TM
Avnet Americas Trans MOSFET N-CH 250V 33A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: FDB33N25TM) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 26 Weeks, 0 Days Container: Reel 0
  • 800 $0.9695
$0.9695 Buy Now
DISTI # FDB33N25TM
Avnet Americas Trans MOSFET N-CH 250V 33A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: FDB33N25TM) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 22 Weeks, 0 Days Container: Reel 0
  • 800 $0.9695
$0.9695 Buy Now
DISTI # 73928894
RS Transistor, MOSFET, N-channel, high voltage, 250V, 33A, 94mOhm at 10V, D2PAK | ON Semiconductor FDB33N25TM RoHS: Compliant Min Qty: 2 Package Multiple: 1 Lead time: 2 Weeks, 0 Days Container: Bulk 0
  • 2 $2.2900
  • 50 $2.1200
  • 100 $2.0600
$2.0600 / $2.2900 RFQ
Bristol Electronics   27
RFQ
Rochester Electronics Power Field-Effect Transistor, 33A, 250V, 0.094ohm, N-Channel, MOSFET, TO-263AB RoHS: Compliant Status: Active Min Qty: 1 1
  • 1 $1.0900
  • 25 $1.0600
  • 100 $1.0200
  • 500 $0.9774
  • 1,000 $0.9231
$0.9231 / $1.0900 Buy Now
DISTI # FDB33N25TM
TME Transistor: N-MOSFET, unipolar, 250V, 33A, 235W, D2PAK Min Qty: 1 784
  • 1 $1.8900
  • 5 $1.6600
  • 25 $1.5200
  • 100 $1.3700
  • 800 $1.2700
$1.2700 / $1.8900 Buy Now
Ameya Holding Limited Single N-Channel 250 V 235 W 48 nC Silicon Surface Mount Mosfet - TO-263-3 63200
RFQ
DISTI # FDB33N25TM
Richardson RFPD POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 800 0
  • 800 $0.9300
$0.9300 Buy Now
Chip 1 Exchange INSTOCK 4019
RFQ
DISTI # FDB33N25TM
Avnet Asia Trans MOSFET N-CH 250V 33A 3-Pin(2+Tab) D2PAK T/R (Alt: FDB33N25TM) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 22 Weeks, 0 Days 4000
  • 800 $0.9799
  • 1,600 $0.9671
  • 2,400 $0.9547
  • 4,000 $0.9427
  • 8,000 $0.9194
  • 20,000 $0.8972
  • 40,000 $0.8761
$0.8761 / $0.9799 Buy Now
DISTI # FDB33N25TM
Avnet Silica Trans MOSFET N-CH 250V 33A 3-Pin(2+Tab) D2PAK T/R (Alt: FDB33N25TM) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 23 Weeks, 0 Days Silica - 0
Buy Now
DISTI # C1S541901388168
Chip1Stop MOSFET RoHS: Compliant 31200
  • 800 $1.0600
  • 1,600 $1.0500
  • 3,200 $1.0300
  • 5,600 $1.0200
  • 10,400 $0.9900
$0.9900 / $1.0600 Buy Now
DISTI # C1S226600727488
Chip1Stop Trans MOSFET N-CH 250V 33A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant 299
  • 1 $2.4524
  • 10 $1.8478
  • 25 $1.8117
  • 100 $1.2883
  • 250 $1.0700
$1.0700 / $2.4524 Buy Now
DISTI # FDB33N25TM
EBV Elektronik Trans MOSFET N-CH 250V 33A 3-Pin(2+Tab) D2PAK T/R (Alt: FDB33N25TM) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 28 Weeks, 0 Days EBV - 0
Buy Now
LCSC 250V 33A 94m10V16.5A 235W 5V250uA 1 N-Channel D2PAK(TO-263) MOSFETs ROHS 1691
  • 1 $1.5137
  • 10 $1.3044
  • 30 $1.1723
  • 100 $0.9835
  • 500 $0.9221
  • 800 $0.8969
$0.8969 / $1.5137 Buy Now
MacroQuest Electronics ISO 9001: 2015, ISO 14001:2015, ISO 45001:2018 5391
  • 1 $2.2900
  • 10 $1.8500
  • 100 $1.4100
$1.4100 / $2.2900 Buy Now
Wuhan P&S 250V,33A,94m?,N-CH UniFETTM MOSFET Min Qty: 1 21600
  • 1 $2.6000
  • 100 $1.6600
  • 500 $1.3700
  • 1,000 $1.2600
$1.2600 / $2.6000 Buy Now

Part Details for FDB33N25TM

FDB33N25TM CAD Models

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FDB33N25TM Part Data Attributes

Parametric Data
FDB33N25TM onsemi
Buy Now Datasheet
Compare Parts:
FDB33N25TM onsemi Power MOSFET, N-Channel, UniFETTM, 250 V, 33 A, 94 mΩ, D2PAK, 800-REEL
Pbfree Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ONSEMI
Package Description D2PAK-3
Manufacturer Package Code 418AJ
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 26 Weeks
Samacsys Manufacturer onsemi
Additional Feature FAST SWITCHING, AVALANCHE RATED
Avalanche Energy Rating (Eas) 918 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 250 V
Drain Current-Max (ID) 33 A
Drain-source On Resistance-Max 0.094 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 245
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 235 W
Pulsed Drain Current-Max (IDM) 132 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

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