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Transistors / Power Field-Effect Transistors / FDB52N20TM
Datasheets
FDB52N20TM by:

Power MOSFET, N-Channel, UniFETTM, 250V, 52A, 69mΩ, D2PAK, D2PAK-3 / TO-263-2, 800-REEL

Part Details for FDB52N20TM by onsemi

Overview of FDB52N20TM by onsemi

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Price & Stock for FDB52N20TM

Part # Distributor Description Stock Price Buy
DISTI # 31Y1340
Newark Mosfet Transistor, N Channel, 52 A, 200 V, 0.041 Ohm, 10 V, 5 V Rohs Compliant: Yes |Onsemi FDB52N20TM RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape 777
  • 1 $2.9900
  • 10 $2.1200
  • 25 $1.9400
  • 50 $1.7600
  • 100 $1.5900
$1.5900 / $2.9900 Buy Now
DISTI # 81AC8682
Newark Uf 200V 49Mohm D2Pak Rohs Compliant: Yes |Onsemi FDB52N20TM RoHS: Compliant Min Qty: 800 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 1 $1.4200
  • 3,000 $1.3400
  • 6,000 $1.2700
  • 12,000 $1.1400
  • 18,000 $1.1000
  • 30,000 $1.0600
$1.0600 / $1.4200 Buy Now
DISTI # 86K1324
Newark N Channel Mosfet, 200V, 52A, D2-Pak, Channel Type:N Channel, Drain Source Voltage Vds:200V, Continuous Drain Current Id:52A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:5V Rohs Compliant: Yes |Onsemi FDB52N20TM RoHS: Compliant Min Qty: 800 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 1 $1.4200
  • 3,000 $1.3400
  • 6,000 $1.2700
  • 12,000 $1.1400
  • 18,000 $1.1000
  • 30,000 $1.0600
$1.0600 / $1.4200 Buy Now
DISTI # FDB52N20TM
Avnet Americas Power MOSFET, N Channel, 200 V, 52 A, 49 MilliOhms, TO-263 (D2PAK), 3 Pins, Surface Mount - Tape and Reel (Alt: FDB52N20TM) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 16 Weeks, 0 Days Container: Reel 9600
  • 800 $1.1102
  • 1,600 $1.0170
  • 3,200 $1.0049
  • 4,800 $1.0001
  • 6,400 $0.9931
$0.9931 / $1.1102 Buy Now
DISTI # FDB52N20TM
Avnet Americas Power MOSFET, N Channel, 200 V, 52 A, 49 MilliOhms, TO-263 (D2PAK), 3 Pins, Surface Mount - Tape and Reel (Alt: FDB52N20TM) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 16 Weeks, 0 Days Container: Reel 0
  • 800 $1.1102
  • 1,600 $1.0170
  • 3,200 $1.0049
  • 4,800 $1.0001
  • 6,400 $0.9931
$0.9931 / $1.1102 Buy Now
Bristol Electronics   34
RFQ
DISTI # FDB52N20TM
TME Transistor: N-MOSFET, unipolar, 200V, 52A, 357W, D2PAK Min Qty: 1 657
  • 1 $2.0300
  • 5 $1.8100
  • 25 $1.6300
  • 100 $1.5100
  • 800 $1.4200
$1.4200 / $2.0300 Buy Now
DISTI # FDB52N20TM
Richardson RFPD POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 800 0
  • 800 $1.0600
$1.0600 Buy Now
DISTI # FDB52N20TM
Avnet Asia Power MOSFET, N Channel, 200 V, 52 A, 49 MilliOhms, TO-263 (D2PAK), 3 Pins, Surface Mount (Alt: FDB52N20TM) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 16 Weeks, 0 Days 0
  • 800 $1.2059
  • 1,600 $1.1255
  • 2,400 $1.0962
  • 4,000 $1.0685
  • 8,000 $1.0421
  • 20,000 $1.0170
  • 40,000 $0.9931
$0.9931 / $1.2059 Buy Now
DISTI # FDB52N20TM
Avnet Silica Power MOSFET, N Channel, 200 V, 52 A, 49 MilliOhms, TO-263 (D2PAK), 3 Pins, Surface Mount (Alt: FDB52N20TM) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 17 Weeks, 0 Days Silica - 0
Buy Now
DISTI # FDB52N20TM
EBV Elektronik Power MOSFET, N Channel, 200 V, 52 A, 49 MilliOhms, TO-263 (D2PAK), 3 Pins, Surface Mount (Alt: FDB52N20TM) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 18 Weeks, 0 Days EBV - 0
Buy Now

Part Details for FDB52N20TM

FDB52N20TM CAD Models

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FDB52N20TM Part Data Attributes

Parametric Data
FDB52N20TM onsemi
Buy Now Datasheet
Compare Parts:
FDB52N20TM onsemi Power MOSFET, N-Channel, UniFETTM, 250V, 52A, 69mΩ, D2PAK, D2PAK-3 / TO-263-2, 800-REEL
Pbfree Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ONSEMI
Part Package Code D2PAK-3 / TO-263-2
Package Description D2PAK-3/2
Manufacturer Package Code 418AJ
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 16 Weeks
Samacsys Manufacturer onsemi
Avalanche Energy Rating (Eas) 2520 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 52 A
Drain-source On Resistance-Max 0.049 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 245
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 357 W
Pulsed Drain Current-Max (IDM) 208 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FDB52N20TM

This table gives cross-reference parts and alternative options found for FDB52N20TM. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDB52N20TM, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
FDB52N20 onsemi Check for Price Power Field-Effect Transistor, 52A I(D), 200V, 0.049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET FDB52N20TM vs FDB52N20
Part Number Manufacturer Composite Price Description Compare
SML20S56 TT Electronics Power and Hybrid / Semelab Limited Check for Price 56A, 200V, 0.045ohm, N-CHANNEL, Si, POWER, MOSFET, D3PAK-3 FDB52N20TM vs SML20S56
FDB52N20TM Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 52A I(D), 200V, 0.049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, D2PAK-3 FDB52N20TM vs FDB52N20TM
SML20S56 TT Electronics Resistors Check for Price Power Field-Effect Transistor, 56A I(D), 200V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D3PAK-3 FDB52N20TM vs SML20S56
APT20M45SVR Microsemi Corporation Check for Price Power Field-Effect Transistor, 56A I(D), 200V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D3PAK-3 FDB52N20TM vs APT20M45SVR
APT20M45SVFR Microsemi Corporation Check for Price Power Field-Effect Transistor, 56A I(D), 200V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D3PAK-3/2 FDB52N20TM vs APT20M45SVFR
SML20M45SVR TT Electronics Power and Hybrid / Semelab Limited Check for Price 56A, 200V, 0.045ohm, N-CHANNEL, Si, POWER, MOSFET, D3PAK-3 FDB52N20TM vs SML20M45SVR
APT20M45SVFRG Microchip Technology Inc $13.4037 Power Field-Effect Transistor, 56A I(D), 200V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET FDB52N20TM vs APT20M45SVFRG
APT20M45SVRG Microchip Technology Inc $11.9363 Power Field-Effect Transistor, 56A I(D), 200V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET FDB52N20TM vs APT20M45SVRG
SML20M45SVFR TT Electronics Resistors Check for Price Power Field-Effect Transistor, 56A I(D), 200V, 0.045ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET, D3PAK-3 FDB52N20TM vs SML20M45SVFR

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