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Transistors / Power Field-Effect Transistors / FDB52N20TM
Datasheets
FDB52N20TM by:

Power MOSFET, N-Channel, UniFETTM, 250V, 52A, 69mΩ, D2PAK, D2PAK-3 / TO-263-2, 800-REEL

Part Details for FDB52N20TM by onsemi

Results Overview of FDB52N20TM by onsemi

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

FDB52N20TM Information

FDB52N20TM by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for FDB52N20TM

Part # Distributor Description Stock Price Buy
DISTI # 81AC8682
Newark Uf 200V 49Mohm D2Pak Rohs Compliant: Yes |Onsemi FDB52N20TM RoHS: Compliant Min Qty: 800 Package Multiple: 1 Date Code: 0 Container: Reel 9600
  • 1 $1.4200
  • 3,000 $1.3400
  • 6,000 $1.2700
  • 12,000 $1.1400
  • 18,000 $1.1000
  • 30,000 $1.0600
$1.0600 / $1.4200 Buy Now
DISTI # 31Y1340
Newark Mosfet Transistor, N Channel, 52 A, 200 V, 0.041 Ohm, 10 V, 5 V Rohs Compliant: Yes |Onsemi FDB52N20TM RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape 5454
  • 1 $2.8600
  • 10 $2.2000
  • 25 $2.0700
  • 50 $1.9400
  • 100 $1.8100
  • 250 $1.7700
  • 500 $1.7400
  • 1,600 $1.6900
$1.6900 / $2.8600 Buy Now
DISTI # 86K1324
Newark N Channel Mosfet, 200V, 52A, D2-Pak, Channel Type:N Channel, Drain Source Voltage Vds:200V, Continuous Drain Current Id:52A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:5V Rohs Compliant: Yes |Onsemi FDB52N20TM RoHS: Compliant Min Qty: 800 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 1 $1.4200
  • 3,000 $1.3400
  • 6,000 $1.2700
  • 12,000 $1.1400
  • 18,000 $1.1000
  • 30,000 $1.0600
$1.0600 / $1.4200 Buy Now
DISTI # FDB52N20TM
Avnet Americas Power MOSFET, N Channel, 200 V, 52 A, 49 MilliOhms, TO-263 (D2PAK), 3 Pins, Surface Mount - Tape and Reel (Alt: FDB52N20TM) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 11 Weeks, 0 Days Container: Reel 8800
  • 800 $1.1102
  • 1,600 $1.0170
  • 3,200 $1.0049
  • 4,800 $1.0001
  • 6,400 $0.9931
$0.9931 / $1.1102 Buy Now
DISTI # FDB52N20TM
Avnet Americas Power MOSFET, N Channel, 200 V, 52 A, 49 MilliOhms, TO-263 (D2PAK), 3 Pins, Surface Mount - Tape and Reel (Alt: FDB52N20TM) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 11 Weeks, 0 Days Container: Reel 0
  • 800 $1.1102
  • 1,600 $1.0170
  • 3,200 $1.0049
  • 4,800 $1.0001
  • 6,400 $0.9931
$0.9931 / $1.1102 Buy Now
DISTI # FDB52N20TM
Avnet Americas Power MOSFET, N Channel, 200 V, 52 A, 49 MilliOhms, TO-263 (D2PAK), 3 Pins, Surface Mount - Tape and Reel (Alt: FDB52N20TM) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 11 Weeks, 0 Days Container: Reel 0
  • 800 $1.1102
  • 1,600 $1.0170
  • 3,200 $1.0049
  • 4,800 $1.0001
  • 6,400 $0.9931
$0.9931 / $1.1102 Buy Now
Bristol Electronics   34
RFQ
DISTI # FDB52N20TM
TME Transistor: N-MOSFET, unipolar, 200V, 52A, 357W, D2PAK Min Qty: 1 651
  • 1 $1.9700
  • 5 $1.7500
  • 25 $1.5800
  • 100 $1.4700
  • 800 $1.3700
$1.3700 / $1.9700 Buy Now
DISTI # FDB52N20TM
Richardson RFPD POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 800 0
  • 800 $1.0600
$1.0600 Buy Now
DISTI # FDB52N20TM
Avnet Asia Power MOSFET, N Channel, 200 V, 52 A, 49 MilliOhms, TO-263 (D2PAK), 3 Pins, Surface Mount (Alt: FDB52N20TM) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 11 Weeks, 0 Days 0
  • 800 $1.1107
  • 1,600 $1.0962
  • 2,400 $1.0822
  • 4,000 $1.0685
  • 8,000 $1.0421
  • 20,000 $1.0170
  • 40,000 $0.9931
$0.9931 / $1.1107 Buy Now
DISTI # FDB52N20TM
Avnet Silica Power MOSFET, N Channel, 200 V, 52 A, 49 MilliOhms, TO-263 (D2PAK), 3 Pins, Surface Mount (Alt: FDB52N20TM) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 12 Weeks, 0 Days Silica - 0
Buy Now
DISTI # FDB52N20TM
EBV Elektronik Power MOSFET, N Channel, 200 V, 52 A, 49 MilliOhms, TO-263 (D2PAK), 3 Pins, Surface Mount (Alt: FDB52N20TM) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 18 Weeks, 0 Days EBV - 0
Buy Now

Part Details for FDB52N20TM

FDB52N20TM CAD Models

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FDB52N20TM Part Data Attributes

Parametric Data
FDB52N20TM onsemi
Buy Now Datasheet
Compare Parts:
FDB52N20TM onsemi Power MOSFET, N-Channel, UniFETTM, 250V, 52A, 69mΩ, D2PAK, D2PAK-3 / TO-263-2, 800-REEL
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ONSEMI
Part Package Code D2PAK-3 / TO-263-2
Package Description D2PAK-3/2
Manufacturer Package Code 418AJ
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 16 Weeks
Samacsys Manufacturer onsemi
Avalanche Energy Rating (Eas) 2520 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 52 A
Drain-source On Resistance-Max 0.049 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 245
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 357 W
Pulsed Drain Current-Max (IDM) 208 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FDB52N20TM

This table gives cross-reference parts and alternative options found for FDB52N20TM. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDB52N20TM, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
APT20M45SVFRG Microchip Technology Inc $13.4037 Power Field-Effect Transistor, 56A I(D), 200V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET FDB52N20TM vs APT20M45SVFRG

FDB52N20TM Related Parts

FDB52N20TM Frequently Asked Questions (FAQ)

  • The maximum SOA for the FDB52N20TM is typically defined by the device's voltage and current ratings. However, it's essential to consult the datasheet and application notes for specific guidance on SOA, as it may vary depending on the application and operating conditions.

  • To ensure proper thermal management, it's crucial to provide adequate heat sinking, such as using a heat sink or thermal interface material, and to follow the recommended PCB layout and thermal design guidelines outlined in the datasheet and application notes.

  • The recommended gate drive circuits for the FDB52N20TM typically involve using a gate driver IC, such as the FAN5350, along with a suitable gate resistor and capacitor. Consult the datasheet and application notes for specific guidance on gate drive circuit design.

  • To handle ESD protection for the FDB52N20TM, it's essential to follow proper handling and storage procedures, use ESD-protective packaging, and incorporate ESD protection devices, such as TVS diodes, into the circuit design.

  • The reliability and lifespan expectations for the FDB52N20TM are typically dependent on factors such as operating conditions, temperature, and usage patterns. Consult the datasheet and reliability reports for specific information on the device's expected lifespan and reliability.

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