Part Details for FDB6676 by Rochester Electronics LLC
Overview of FDB6676 by Rochester Electronics LLC
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for FDB6676
FDB6676 CAD Models
FDB6676 Part Data Attributes:
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FDB6676
Rochester Electronics LLC
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Datasheet
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FDB6676
Rochester Electronics LLC
75A, 30V, 0.006ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, D2PAK-3
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| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ROCHESTER ELECTRONICS LLC | |
| Part Package Code | D2PAK | |
| Package Description | D2PAK-3 | |
| Pin Count | 3 | |
| Reach Compliance Code | unknown | |
| Avalanche Energy Rating (Eas) | 370 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 75 A | |
| Drain-source On Resistance-Max | 0.006 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 240 A | |
| Qualification Status | COMMERCIAL | |
| Surface Mount | YES | |
| Terminal Finish | NOT SPECIFIED | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FDB6676
This table gives cross-reference parts and alternative options found for FDB6676. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDB6676, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| RFD3055 | 12A, 60V, 0.15ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA | Rochester Electronics LLC | FDB6676 vs RFD3055 |
| SPP10N10 | 10.3A, 100V, 0.17ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, ROHS COMPLIANT, TO-262, 3 PIN | Rochester Electronics LLC | FDB6676 vs SPP10N10 |
| FQA24N50 | 24A, 500V, 0.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3PN, 3 PIN | Rochester Electronics LLC | FDB6676 vs FQA24N50 |
| 2N6768 | Power Field-Effect Transistor, 14A I(D), 400V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204, HERMETIC SEALED, TO-204, 2 PIN | International Rectifier | FDB6676 vs 2N6768 |
| IRF621R | 5A, 150V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Rochester Electronics LLC | FDB6676 vs IRF621R |
| IRF610B | 3.3A, 200V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN | Rochester Electronics LLC | FDB6676 vs IRF610B |
| 934056482118 | 23A, 100V, 0.075ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3 | NXP Semiconductors | FDB6676 vs 934056482118 |
| IRF720R | 3.3A, 400V, 1.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Rochester Electronics LLC | FDB6676 vs IRF720R |
| FQP5P20 | 4.8A, 200V, 1.4ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN | Rochester Electronics LLC | FDB6676 vs FQP5P20 |
| FDB14AN06LA0 | 10A, 60V, 0.012ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220AB, 3 PIN | Rochester Electronics LLC | FDB6676 vs FDB14AN06LA0 |