There are no models available for this part yet.
Overview of FDB7030L by Fairchild Semiconductor Corporation
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 11 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 0 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for FDB7030L by Fairchild Semiconductor Corporation
Part # | Manufacturer | Description | Stock | Price | Buy | ||
---|---|---|---|---|---|---|---|
Bristol Electronics | 1616 |
|
RFQ | ||||
Bristol Electronics | Min Qty: 5 | 1380 |
|
$0.2925 / $1.1250 | Buy Now | ||
Bristol Electronics | 189 |
|
RFQ | ||||
Bristol Electronics | 4 |
|
RFQ | ||||
Quest Components | MOSFET Transistor, N-Channel, TO-263AB | 1938 |
|
$3.9060 / $11.1600 | Buy Now | ||
Quest Components | MOSFET Transistor, N-Channel, TO-263AB | 1292 |
|
$5.5800 / $11.1600 | Buy Now | ||
Quest Components | MOSFET Transistor, N-Channel, TO-263AB | 1104 |
|
$0.3900 / $1.5000 | Buy Now | ||
Quest Components | MOSFET Transistor, N-Channel, TO-263AB | 640 |
|
$5.5800 / $11.1600 | Buy Now | ||
Quest Components | MOSFET Transistor, N-Channel, TO-263AB | 68 |
|
$1.0675 / $2.1350 | Buy Now | ||
Quest Components | MOSFET Transistor, N-Channel, TO-263AB | 12 |
|
$1.9800 / $2.6400 | Buy Now |
CAD Models for FDB7030L by Fairchild Semiconductor Corporation
Part Data Attributes for FDB7030L by Fairchild Semiconductor Corporation
|
|
---|---|
Rohs Code
|
Yes
|
Part Life Cycle Code
|
Obsolete
|
Ihs Manufacturer
|
FAIRCHILD SEMICONDUCTOR CORP
|
Part Package Code
|
D2PAK
|
Package Description
|
TO-263AB, 3 PIN
|
Pin Count
|
4
|
Reach Compliance Code
|
not_compliant
|
ECCN Code
|
EAR99
|
Additional Feature
|
LOGIC LEVEL COMPATIBLE
|
Avalanche Energy Rating (Eas)
|
114 mJ
|
Case Connection
|
DRAIN
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min
|
30 V
|
Drain Current-Max (ID)
|
80 A
|
Drain-source On Resistance-Max
|
0.007 Ω
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code
|
TO-263AB
|
JESD-30 Code
|
R-PSSO-G2
|
JESD-609 Code
|
e3
|
Moisture Sensitivity Level
|
1
|
Number of Elements
|
1
|
Number of Terminals
|
2
|
Operating Mode
|
ENHANCEMENT MODE
|
Operating Temperature-Max
|
175 °C
|
Operating Temperature-Min
|
-65 °C
|
Package Body Material
|
PLASTIC/EPOXY
|
Package Shape
|
RECTANGULAR
|
Package Style
|
SMALL OUTLINE
|
Polarity/Channel Type
|
N-CHANNEL
|
Power Dissipation-Max (Abs)
|
125 W
|
Pulsed Drain Current-Max (IDM)
|
240 A
|
Qualification Status
|
Not Qualified
|
Surface Mount
|
YES
|
Terminal Finish
|
MATTE TIN
|
Terminal Form
|
GULL WING
|
Terminal Position
|
SINGLE
|
Transistor Application
|
SWITCHING
|
Transistor Element Material
|
SILICON
|
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