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N-Channel PowerTrench® MOSFET, 80V, 110A, 1.8 mΩ, TO-263 2L (D2PAK), 800-REEL, Automotive Qualified
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
48AC0896
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Newark | Nmos D2Pak 80V 1.8 Mohm/Reel Rohs Compliant: Yes |Onsemi FDB86360-F085 Min Qty: 800 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$2.6200 / $3.3400 | Buy Now |
DISTI #
FDB86360-F085CT-ND
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DigiKey | MOSFET N-CH 80V 110A D2PAK Min Qty: 1 Lead time: 19 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
1444 In Stock |
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$3.8643 / $5.6900 | Buy Now |
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Future Electronics | FDB86360 Series 80 V 110 A 1.8 mOhm N-Ch Power Trench Mosfet - D²PAK (TO-263AB) RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Container: Reel | 800Reel |
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$2.3000 / $2.3600 | Buy Now |
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Bristol Electronics | 14 |
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RFQ | ||
DISTI #
3615982
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Farnell | MOSFET'S - SINGLE RoHS: Compliant Min Qty: 800 Lead time: 20 Weeks, 1 Days Container: Reel | 0 |
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$3.9176 | Buy Now |
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New Advantage Corporation | RoHS: Compliant Min Qty: 1 Package Multiple: 800 | 1600 |
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$3.0700 / $3.2900 | Buy Now |
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FDB86360-F085
onsemi
Buy Now
Datasheet
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Compare Parts:
FDB86360-F085
onsemi
N-Channel PowerTrench® MOSFET, 80V, 110A, 1.8 mΩ, TO-263 2L (D2PAK), 800-REEL, Automotive Qualified
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Pbfree Code | Yes | |
Part Life Cycle Code | Lifetime Buy | |
Ihs Manufacturer | ONSEMI | |
Part Package Code | TO-263 2L (D2PAK) | |
Package Description | ROHS COMPLIANT, TO-263, D2PAK-3/2 | |
Manufacturer Package Code | 418AJ | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | onsemi | |
Avalanche Energy Rating (Eas) | 1167 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 80 V | |
Drain Current-Max (ID) | 110 A | |
Drain-source On Resistance-Max | 0.0018 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 245 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 333 W | |
Reference Standard | AEC-Q101 | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |