Datasheets
FDB86360-F085 by:

N-Channel PowerTrench® MOSFET, 80V, 110A, 1.8 mΩ, TO-263 2L (D2PAK), 800-REEL, Automotive Qualified

Part Details for FDB86360-F085 by onsemi

Overview of FDB86360-F085 by onsemi

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Applications Space Technology Aerospace and Defense Energy and Power Systems

Price & Stock for FDB86360-F085

Part # Distributor Description Stock Price Buy
DISTI # 48AC0896
Newark Nmos D2Pak 80V 1.8 Mohm/Reel Rohs Compliant: Yes |Onsemi FDB86360-F085 Min Qty: 800 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 1 $3.3400
  • 3,000 $3.1900
  • 6,000 $2.9800
  • 12,000 $2.7700
  • 18,000 $2.6600
  • 30,000 $2.6200
$2.6200 / $3.3400 Buy Now
DISTI # FDB86360-F085CT-ND
DigiKey MOSFET N-CH 80V 110A D2PAK Min Qty: 1 Lead time: 19 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 1444
In Stock
  • 1 $5.6900
  • 10 $4.7770
  • 100 $3.8643
$3.8643 / $5.6900 Buy Now
Future Electronics FDB86360 Series 80 V 110 A 1.8 mOhm N-Ch Power Trench Mosfet - D²PAK (TO-263AB) RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Container: Reel 800
Reel
  • 800 $2.3600
  • 1,600 $2.3000
$2.3000 / $2.3600 Buy Now
Bristol Electronics   14
RFQ
DISTI # 3615982
Farnell MOSFET'S - SINGLE RoHS: Compliant Min Qty: 800 Lead time: 20 Weeks, 1 Days Container: Reel 0
  • 800 $3.9176
$3.9176 Buy Now
New Advantage Corporation   RoHS: Compliant Min Qty: 1 Package Multiple: 800 1600
  • 800 $3.2900
  • 1,600 $3.0700
$3.0700 / $3.2900 Buy Now

Part Details for FDB86360-F085

FDB86360-F085 CAD Models

FDB86360-F085 Part Data Attributes

FDB86360-F085 onsemi
Buy Now Datasheet
Compare Parts:
FDB86360-F085 onsemi N-Channel PowerTrench® MOSFET, 80V, 110A, 1.8 mΩ, TO-263 2L (D2PAK), 800-REEL, Automotive Qualified
Pbfree Code Yes
Part Life Cycle Code Lifetime Buy
Ihs Manufacturer ONSEMI
Part Package Code TO-263 2L (D2PAK)
Package Description ROHS COMPLIANT, TO-263, D2PAK-3/2
Manufacturer Package Code 418AJ
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer onsemi
Avalanche Energy Rating (Eas) 1167 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 80 V
Drain Current-Max (ID) 110 A
Drain-source On Resistance-Max 0.0018 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 245
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 333 W
Reference Standard AEC-Q101
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

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