Part Details for FDB8880 by Fairchild Semiconductor Corporation
Overview of FDB8880 by Fairchild Semiconductor Corporation
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (4 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for FDB8880
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-FDB8880-ND
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DigiKey | 11A, 30V, 0.0145OHM, N-CHANNEL, Min Qty: 476 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
734 In Stock |
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$0.6300 | Buy Now |
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Bristol Electronics | 800 |
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RFQ | ||
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Quest Components | 640 |
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$1.4256 / $3.4560 | Buy Now | |
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Rochester Electronics | Power Field-Effect Transistor, 11A, 30V, 0.0145ohm, N-Channel, MOSFET, TO-263AB ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 804 |
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$0.5415 / $0.6370 | Buy Now |
Part Details for FDB8880
FDB8880 CAD Models
FDB8880 Part Data Attributes:
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FDB8880
Fairchild Semiconductor Corporation
Buy Now
Datasheet
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Compare Parts:
FDB8880
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 11A I(D), 30V, 0.0145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263AB, 3 PIN
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
Part Package Code | D2PAK | |
Package Description | TO-263AB, 3 PIN | |
Pin Count | 2 | |
Manufacturer Package Code | 2LD,TO263, SURFACE MOUNT | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Avalanche Energy Rating (Eas) | 31 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 11 A | |
Drain-source On Resistance-Max | 0.0145 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 55 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for FDB8880
This table gives cross-reference parts and alternative options found for FDB8880. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDB8880, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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FDB8880 | 11A, 30V, 0.0145ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263AB, 3 PIN | Rochester Electronics LLC | FDB8880 vs FDB8880 |
ISL9N310AS3ST | 62A, 30V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | Intersil Corporation | FDB8880 vs ISL9N310AS3ST |
FDB8880_NL | Power Field-Effect Transistor, 11A I(D), 30V, 0.0145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE PACKAGE-3 | Fairchild Semiconductor Corporation | FDB8880 vs FDB8880_NL |
ISL9N310AS3ST | 62A, 30V, 0.01ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | Rochester Electronics LLC | FDB8880 vs ISL9N310AS3ST |