Part Details for FDB9509L-F085 by onsemi
Overview of FDB9509L-F085 by onsemi
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for FDB9509L-F085
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
85AC2830
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Newark | Pmos D2Pak 40V 110X72 Mils/Reel |Onsemi FDB9509L-F085 Min Qty: 800 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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Buy Now | |
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DISTI #
FDB9509L-F085
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Avnet Americas | PMOS D2PAK 40V 110X72 MIL - Tape and Reel (Alt: FDB9509L-F085) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Container: Reel | 0 |
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RFQ | |
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DISTI #
FDB9509L-F085
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Avnet Americas | PMOS D2PAK 40V 110X72 MIL - Tape and Reel (Alt: FDB9509L-F085) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Container: Reel | 0 |
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RFQ | |
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DISTI #
3615994
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Farnell | MOSFET'S - SINGLE RoHS: Not Compliant Min Qty: 800 Lead time: 12 Weeks, 1 Days Container: Reel | 0 |
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$0.8847 | Buy Now |
Part Details for FDB9509L-F085
FDB9509L-F085 CAD Models
FDB9509L-F085 Part Data Attributes:
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FDB9509L-F085
onsemi
Buy Now
Datasheet
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Compare Parts:
FDB9509L-F085
onsemi
PowerTrench® MOSFET, P-Channel, -40 V, -83 A, 8.0 mΩ, 800-REEL, Automotive Qualified
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| Pbfree Code | Yes | |
| Part Life Cycle Code | End Of Life | |
| Ihs Manufacturer | ONSEMI | |
| Package Description | TO-263, D2PAK-3/2 | |
| Manufacturer Package Code | 418AJ | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 82 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 83 A | |
| Drain-source On Resistance-Max | 0.008 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 245 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 93.8 W | |
| Pulsed Drain Current-Max (IDM) | 669 A | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Element Material | SILICON |
Alternate Parts for FDB9509L-F085
This table gives cross-reference parts and alternative options found for FDB9509L-F085. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDB9509L-F085, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IPP70P04P4L-08 | Power Field-Effect Transistor, 80A I(D), 40V, 0.0082ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | FDB9509L-F085 vs IPP70P04P4L-08 |
| IPB80P04P4L08XT | Power Field-Effect Transistor, 80A I(D), 40V, 0.0079ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263-3-2, 3/2 PIN | Infineon Technologies AG | FDB9509L-F085 vs IPB80P04P4L08XT |
| IPP70P04P409XK | Power Field-Effect Transistor, 72A I(D), 40V, 0.0094ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | FDB9509L-F085 vs IPP70P04P409XK |
| IPD85P04P407ATMA1 | Power Field-Effect Transistor, 85A I(D), 40V, 0.0073ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3/2 | Infineon Technologies AG | FDB9509L-F085 vs IPD85P04P407ATMA1 |
| FDD9509L-F085 | P-Channel POWERTRENCH® MOSFET, -40 V, -100 A, 4.4 mΩ P-Channel PowerTrench MOSFET, 2500-REEL, Automotive Qualified | onsemi | FDB9509L-F085 vs FDD9509L-F085 |
| IPI80P04P4L04XK | Power Field-Effect Transistor, 80A I(D), 40V, 0.0071ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN | Infineon Technologies AG | FDB9509L-F085 vs IPI80P04P4L04XK |
| IPB80P04P4L-04 | Power Field-Effect Transistor, 80A I(D), 40V, 0.0071ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | FDB9509L-F085 vs IPB80P04P4L-04 |
| IPP80P04P407XK | Power Field-Effect Transistor, 80A I(D), 40V, 0.0077ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | FDB9509L-F085 vs IPP80P04P407XK |
| IPI80P04P4-07 | Power Field-Effect Transistor, 80A I(D), 40V, 0.0077ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN | Infineon Technologies AG | FDB9509L-F085 vs IPI80P04P4-07 |
| IPB80P04P4-07 | Power Field-Effect Transistor, 80A I(D), 40V, 0.0077ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | FDB9509L-F085 vs IPB80P04P4-07 |