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Transistors / Power Field-Effect Transistors / FDC2512
Datasheets
FDC2512 by:

N-Channel PowerTrench® MOSFET 150V 1.4A, 425mΩ, TSOT-23-6, 3000-REEL

Part Details for FDC2512 by onsemi

Results Overview of FDC2512 by onsemi

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

FDC2512 Information

FDC2512 by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for FDC2512

Part # Distributor Description Stock Price Buy
DISTI # 61M6198
Newark Mosfet, N, Smd, Ssot-6, Transistor Polarity:N Channel, Continuous Drain Current Id:1.4A, Drain Source Voltage Vds:150V, On Resistance Rds(On):0.425Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:2.6V, Power Dissipation Rohs Compliant: Yes |Onsemi FDC2512 RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 0 Container: Cut Tape 0
Buy Now
DISTI # 82C2438
Newark N Channel Mosfet, 150V, 1.4A Super Sot-6, Channel Type:N Channel, Drain Source Voltage Vds:150V, Continuous Drain Current Id:1.4A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2.6V Rohs Compliant: Yes |Onsemi FDC2512 RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Cut Tape 0
Buy Now
Bristol Electronics   9000
RFQ
Ameya Holding Limited N-Channel 150 V 425 mOhm Surface Mount PowerTrench Mosfet - SSOT-6 4936
RFQ
DISTI # FDC2512
Avnet Silica Trans MOSFET NCH 150V 14A 6Pin SuperSOT TR (Alt: FDC2512) RoHS: Compliant Min Qty: 6000 Package Multiple: 3000 Lead time: 143 Weeks, 0 Days Silica - 0
Buy Now
DISTI # FDC2512
EBV Elektronik Trans MOSFET NCH 150V 14A 6Pin SuperSOT TR (Alt: FDC2512) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 143 Weeks, 0 Days EBV - 6000
Buy Now
Flip Electronics Stock, ship today 58000
RFQ

Part Details for FDC2512

FDC2512 CAD Models

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FDC2512 Part Data Attributes

Parametric Data
FDC2512 onsemi
Buy Now Datasheet
Compare Parts:
FDC2512 onsemi N-Channel PowerTrench® MOSFET 150V 1.4A, 425mΩ, TSOT-23-6, 3000-REEL
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer ONSEMI
Part Package Code TSOT-23-6
Package Description SUPERSOT-6
Manufacturer Package Code 419BL
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer onsemi
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 150 V
Drain Current-Max (ID) 1.4 A
Drain-source On Resistance-Max 0.425 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G6
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 0.8 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FDC2512

This table gives cross-reference parts and alternative options found for FDC2512. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDC2512, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
FDC2512D87Z Fairchild Semiconductor Corporation Check for Price Small Signal Field-Effect Transistor, 1.4A I(D), 150V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 FDC2512 vs FDC2512D87Z

FDC2512 Related Parts

FDC2512 Frequently Asked Questions (FAQ)

  • A good PCB layout for the FDC2512 involves keeping the input and output traces separate, using a solid ground plane, and placing the device close to the power source. Additionally, using a shielded cable for the USB connection can help reduce EMI.

  • The FDC2512 requires a single 3.3V power supply. Ensure that the power supply is stable and well-regulated. The power sequencing requirement is to power up the VCC pin before the USB_DP and USB_DM pins.

  • The FDC2512 supports USB 2.0 high-speed data transfer rates, which allows for cable lengths up to 3 meters (10 feet) without the need for repeaters or hubs.

  • The FDC2512 has an internal overcurrent protection (OCP) feature that limits the output current to 500mA. However, it is recommended to add external overcurrent protection, such as a polyfuse or a dedicated OCP IC, to protect the device and the system from overcurrent conditions.

  • The FDC2512 has a maximum junction temperature of 150°C. Ensure good airflow around the device, and consider using a heat sink or thermal pad to dissipate heat. Avoid blocking the airflow around the device and ensure that the PCB is designed to dissipate heat efficiently.

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