Datasheets
FDC3601N by:

Small Signal Field-Effect Transistor, 1A I(D), 100V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6

Part Details for FDC3601N by Fairchild Semiconductor Corporation

Results Overview of FDC3601N by Fairchild Semiconductor Corporation

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FDC3601N Information

FDC3601N by Fairchild Semiconductor Corporation is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for FDC3601N

Part # Distributor Description Stock Price Buy
ComSIT USA TRANSISTOR Small Signal Field-Effect Transistor, 1A I(D), 100V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET , ECCN: EAR99 RoHS: Compliant Stock DE - 1970
Stock ES - 0
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
RFQ
Win Source Electronics MOSFET 2N-CH 100V 1A SSOT-6 77320
  • 175 $0.2866
  • 430 $0.2352
  • 660 $0.2279
  • 910 $0.2205
  • 1,175 $0.2132
  • 1,570 $0.1911
$0.1911 / $0.2866 Buy Now

Part Details for FDC3601N

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FDC3601N Part Data Attributes

FDC3601N Fairchild Semiconductor Corporation
Buy Now Datasheet
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FDC3601N Fairchild Semiconductor Corporation Small Signal Field-Effect Transistor, 1A I(D), 100V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code SSOT
Package Description SUPERSOT-6
Pin Count 6
Manufacturer Package Code 6LD, SUPERSOT6, JEDEC MO-193, 1.6MM WIDE
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 1 A
Drain-source On Resistance-Max 0.5 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G6
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 0.7 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FDC3601N

This table gives cross-reference parts and alternative options found for FDC3601N. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDC3601N, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
FDC3601ND84Z Fairchild Semiconductor Corporation Check for Price Small Signal Field-Effect Transistor, 1A I(D), 100V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 FDC3601N vs FDC3601ND84Z
FDC3601N-G Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET FDC3601N vs FDC3601N-G
FDC3601N onsemi $0.1073 Dual N-Channel 100V Specified PowerTrench® MOSFET 1.0A, 500mΩ, TSOT-23-6, 3000-REEL FDC3601N vs FDC3601N
FDC3601NS62Z Fairchild Semiconductor Corporation Check for Price Small Signal Field-Effect Transistor, 1A I(D), 100V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 FDC3601N vs FDC3601NS62Z
FDC3601NL99Z Fairchild Semiconductor Corporation Check for Price Small Signal Field-Effect Transistor, 1A I(D), 100V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 FDC3601N vs FDC3601NL99Z
Part Number Manufacturer Composite Price Description Compare
FDC3601N Rochester Electronics LLC Check for Price 1000mA, 100V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SUPERSOT-6 FDC3601N vs FDC3601N

FDC3601N Related Parts

FDC3601N Frequently Asked Questions (FAQ)

  • The FDC3601N can operate from -40°C to 150°C, making it suitable for high-reliability applications.

  • To ensure proper biasing, connect the gate to a voltage source through a resistor, and the source to ground through another resistor. The recommended biasing voltage is typically around 10-15V.

  • The FDC3601N has a maximum continuous drain current rating of 2A, and a peak current rating of 4A.

  • To protect the FDC3601N from ESD, handle the device with an anti-static wrist strap or mat, and ensure that the device is stored in an anti-static bag or tube.

  • Yes, the FDC3601N is suitable for high-frequency switching applications up to 1MHz, but be sure to follow proper PCB layout and decoupling practices to minimize ringing and ensure reliable operation.

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