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Dual N-Channel 100V Specified PowerTrench® MOSFET 1.0A, 500mΩ, TSOT-23-6, 3000-REEL
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
FDC3601N by onsemi is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
61M6199
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Newark | Mosfet, N-Ch, 100 V, 1A, Supersot, Channel Type:N Channel, Drain Source Voltage Vds N Channel:100V, Drain Source Voltage Vds P Channel:-, Continuous Drain Current Id N Channel:1A, Continuous Drain Current Id P Channel:- Rohs Compliant: Yes |Onsemi FDC3601N RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 30 |
|
$0.0800 | Buy Now |
DISTI #
63R1456
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Newark | Mosfet Transistor, Full Reel, Channel Type:N Channel, Drain Source Voltage Vds N Channel:100V, Drain Source Voltage Vds P Channel:-, Continuous Drain Current Id N Channel:1A, Continuous Drain Current Id P Channel:-, No. Of Pins:6Pinsrohs Compliant: Yes |Onsemi FDC3601N RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.1890 / $0.2460 | Buy Now |
DISTI #
FDC3601N
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Avnet Americas | MOSFET Array, Dual N Channel, 100 V, 1 A, 500 MilliOhms, TSOT-23, 6 Pins - Tape and Reel (Alt: FDC3601N) RoHS: Compliant Min Qty: 2778 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Reel | 57000 Partner Stock |
|
$0.2117 / $0.2196 | Buy Now |
DISTI #
FDC3601N
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Avnet Americas | MOSFET Array, Dual N Channel, 100 V, 1 A, 500 MilliOhms, TSOT-23, 6 Pins - Tape and Reel (Alt: FDC3601N) RoHS: Compliant Min Qty: 6000 Package Multiple: 3000 Container: Reel | 0 |
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$0.1716 / $0.1780 | Buy Now |
DISTI #
FDC3601N
|
Avnet Americas | MOSFET Array, Dual N Channel, 100 V, 1 A, 500 MilliOhms, TSOT-23, 6 Pins - Tape and Reel (Alt: FDC3601N) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 10 Weeks, 0 Days Container: Reel | 0 |
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$0.1716 / $0.1779 | Buy Now |
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Rochester Electronics | FDC3601N - Dual N-Channel, MOSFET - Power RoHS: Compliant Status: Active Min Qty: 1 | 3345 |
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$0.1722 / $0.2026 | Buy Now |
DISTI #
FDC3601N
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TME | Transistor: N-MOSFET x2, unipolar, 100V, 1A, 0.96W, SuperSOT-6 Min Qty: 1 | 0 |
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$0.2400 / $0.5800 | RFQ |
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NexGen Digital | 4 |
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RFQ | ||
DISTI #
FDC3601N
|
Richardson RFPD | POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 6000 | 0 |
|
$0.1800 | Buy Now |
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Chip 1 Exchange | INSTOCK | 46800 |
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RFQ |
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FDC3601N
onsemi
Buy Now
Datasheet
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FDC3601N
onsemi
Dual N-Channel 100V Specified PowerTrench® MOSFET 1.0A, 500mΩ, TSOT-23-6, 3000-REEL
|
Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ONSEMI | |
Part Package Code | TSOT-23-6 | |
Manufacturer Package Code | 419BL | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 2 Days | |
Samacsys Manufacturer | onsemi | |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 1 A | |
Drain-source On Resistance-Max | 0.5 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G6 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 2 | |
Number of Terminals | 6 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 0.7 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |