Datasheets
FDC3601N by:

Dual N-Channel 100V Specified PowerTrench® MOSFET 1.0A, 500mΩ, TSOT-23-6, 3000-REEL

Part Details for FDC3601N by onsemi

Results Overview of FDC3601N by onsemi

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

FDC3601N Information

FDC3601N by onsemi is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for FDC3601N

Part # Distributor Description Stock Price Buy
DISTI # 61M6199
Newark Mosfet, N-Ch, 100 V, 1A, Supersot, Channel Type:N Channel, Drain Source Voltage Vds N Channel:100V, Drain Source Voltage Vds P Channel:-, Continuous Drain Current Id N Channel:1A, Continuous Drain Current Id P Channel:- Rohs Compliant: Yes |Onsemi FDC3601N RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 30
  • 1 $0.0800
  • 10 $0.0800
  • 25 $0.0800
  • 50 $0.0800
  • 100 $0.0800
  • 250 $0.0800
  • 500 $0.0800
  • 1,000 $0.0800
$0.0800 Buy Now
DISTI # 63R1456
Newark Mosfet Transistor, Full Reel, Channel Type:N Channel, Drain Source Voltage Vds N Channel:100V, Drain Source Voltage Vds P Channel:-, Continuous Drain Current Id N Channel:1A, Continuous Drain Current Id P Channel:-, No. Of Pins:6Pinsrohs Compliant: Yes |Onsemi FDC3601N RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 3,000 $0.2460
  • 6,000 $0.2270
  • 12,000 $0.2120
  • 18,000 $0.1970
  • 30,000 $0.1890
$0.1890 / $0.2460 Buy Now
DISTI # FDC3601N
Avnet Americas MOSFET Array, Dual N Channel, 100 V, 1 A, 500 MilliOhms, TSOT-23, 6 Pins - Tape and Reel (Alt: FDC3601N) RoHS: Compliant Min Qty: 2778 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Reel 57000 Partner Stock
  • 2,778 $0.2196
  • 2,800 $0.2169
  • 5,600 $0.2151
  • 14,000 $0.2133
  • 28,000 $0.2117
$0.2117 / $0.2196 Buy Now
DISTI # FDC3601N
Avnet Americas MOSFET Array, Dual N Channel, 100 V, 1 A, 500 MilliOhms, TSOT-23, 6 Pins - Tape and Reel (Alt: FDC3601N) RoHS: Compliant Min Qty: 6000 Package Multiple: 3000 Container: Reel 0
  • 6,000 $0.1780
  • 12,000 $0.1758
  • 18,000 $0.1744
  • 30,000 $0.1729
  • 60,000 $0.1716
$0.1716 / $0.1780 Buy Now
DISTI # FDC3601N
Avnet Americas MOSFET Array, Dual N Channel, 100 V, 1 A, 500 MilliOhms, TSOT-23, 6 Pins - Tape and Reel (Alt: FDC3601N) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 10 Weeks, 0 Days Container: Reel 0
  • 3,000 $0.1779
  • 6,000 $0.1758
  • 12,000 $0.1737
  • 18,000 $0.1729
  • 24,000 $0.1716
$0.1716 / $0.1779 Buy Now
Rochester Electronics FDC3601N - Dual N-Channel, MOSFET - Power RoHS: Compliant Status: Active Min Qty: 1 3345
  • 1 $0.2026
  • 25 $0.1985
  • 100 $0.1904
  • 500 $0.1823
  • 1,000 $0.1722
$0.1722 / $0.2026 Buy Now
DISTI # FDC3601N
TME Transistor: N-MOSFET x2, unipolar, 100V, 1A, 0.96W, SuperSOT-6 Min Qty: 1 0
  • 1 $0.5800
  • 10 $0.5020
  • 100 $0.3420
  • 500 $0.2560
  • 1,000 $0.2400
$0.2400 / $0.5800 RFQ
NexGen Digital   4
RFQ
DISTI # FDC3601N
Richardson RFPD POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 6000 0
  • 6,000 $0.1800
$0.1800 Buy Now
Chip 1 Exchange INSTOCK 46800
RFQ
DISTI # FDC3601N
Avnet Asia MOSFET Array, Dual N Channel, 100 V, 1 A, 500 MilliOhms, TSOT-23, 6 Pins (Alt: FDC3601N) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 10 Weeks, 0 Days 3000
  • 3,000 $0.1920
  • 6,000 $0.1895
  • 9,000 $0.1870
  • 15,000 $0.1847
  • 30,000 $0.1801
  • 75,000 $0.1758
  • 150,000 $0.1716
$0.1716 / $0.1920 Buy Now
DISTI # FDC3601N
Avnet Silica MOSFET Array Dual N Channel 100 V 1 A 500 MilliOhms TSOT23 6 Pins (Alt: FDC3601N) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 11 Weeks, 0 Days Silica - 3000
Buy Now
DISTI # FDC3601N
EBV Elektronik MOSFET Array Dual N Channel 100 V 1 A 500 MilliOhms TSOT23 6 Pins (Alt: FDC3601N) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 11 Weeks, 0 Days EBV - 0
Buy Now
Flip Electronics Stock, ship today 57000
RFQ
New Advantage Corporation SUPERSOT 6/Dual N-Channel 100 V Specified Power Trench MOSFET RoHS: Compliant Min Qty: 1 Package Multiple: 3000 3000
  • 3,000 $0.3066
$0.3066 Buy Now
Wuhan P&S Dual N-Ch Specified PowerTrench? MOSFET Min Qty: 1 36000
  • 1 $0.5100
  • 100 $0.3300
  • 500 $0.2700
  • 1,000 $0.2500
$0.2500 / $0.5100 Buy Now

Part Details for FDC3601N

FDC3601N CAD Models

FDC3601N Part Data Attributes

FDC3601N onsemi
Buy Now Datasheet
Compare Parts:
FDC3601N onsemi Dual N-Channel 100V Specified PowerTrench® MOSFET 1.0A, 500mΩ, TSOT-23-6, 3000-REEL
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ONSEMI
Part Package Code TSOT-23-6
Manufacturer Package Code 419BL
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 2 Days
Samacsys Manufacturer onsemi
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 1 A
Drain-source On Resistance-Max 0.5 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G6
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 0.7 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

FDC3601N Related Parts

FDC3601N Frequently Asked Questions (FAQ)

  • A good PCB layout for the FDC3601N involves keeping the input and output traces separate, using a solid ground plane, and placing the device close to the power source. Additionally, using a shielded inductor and placing it close to the device can help reduce EMI.

  • To ensure the FDC3601N operates within its SOA, monitor the device's junction temperature, input voltage, and output current. Make sure the device is not exposed to excessive voltage, current, or temperature, and that the thermal design is adequate to keep the junction temperature below the maximum rating.

  • A low-ESR ceramic capacitor with a value of 4.7uF to 10uF is recommended for the input of the FDC3601N. This helps to filter out noise and ripple on the input voltage.

  • To troubleshoot issues with the FDC3601N, start by checking the input voltage, output voltage, and output current. Verify that the device is properly soldered and that the PCB layout is correct. Check for signs of overheating, such as excessive temperature or thermal shutdown. Use an oscilloscope to check for noise or oscillations on the output.

  • Yes, the FDC3601N is suitable for high-reliability and automotive applications. It is AEC-Q100 qualified and meets the requirements for automotive and industrial applications. However, ensure that the device is used within its specified operating conditions and that the system design meets the required safety and reliability standards.

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