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Dual P-Channel PowerTrench® MOSFET, 1.8V Specified, -20V, -2.3A, 115mΩ, TSOT-23-6, 3000-REEL
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
FDC6312P by onsemi is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
47T5016
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Newark | Dual Mosfet, Dual P Channel, -2.3 A, -20 V, 115 Mohm, -4.5 V, -900 Mv Rohs Compliant: Yes |Onsemi FDC6312P RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 14057 |
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$0.2330 / $0.9700 | Buy Now |
DISTI #
67R2031
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Newark | Mosfet, Full Reel, Channel Type:P Channel, Drain Source Voltage Vds N Channel:-, Drain Source Voltage Vds P Channel:20V, Continuous Drain Current Id N Channel:-, Continuous Drain Current Id P Channel:2.3A, No. Of Pins:6Pins Rohs Compliant: Yes |Onsemi FDC6312P RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.2760 / $0.2880 | Buy Now |
DISTI #
FDC6312P
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Avnet Americas | Transistor MOSFET Array Dual P-CH 20V 2.3A 6-Pin TSOT-23 T/R - Tape and Reel (Alt: FDC6312P) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 9 Weeks, 0 Days Container: Reel | 0 |
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$0.2353 / $0.2569 | Buy Now |
DISTI #
FDC6312P
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TME | Transistor: P-MOSFET x2, unipolar, -20V, -2.3A, 0.96W, SuperSOT-6 Min Qty: 1 | 119 |
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$0.2430 / $0.5950 | Buy Now |
DISTI #
FDC6312P
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Richardson RFPD | POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 6000 | 0 |
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$0.1800 | Buy Now |
DISTI #
FDC6312P
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Avnet Silica | Transistor MOSFET Array Dual P-CH 20V 2.3A 6-Pin TSOT-23 T/R (Alt: FDC6312P) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 10 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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CHIPMALL.COM LIMITED | 20V 2.3A 115m@4.5V,2.3A 960mW 400mV@250uA SuperSOT-6 MOSFETs ROHS | 2673 |
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$0.2599 / $0.4608 | Buy Now |
DISTI #
FDC6312P
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EBV Elektronik | Transistor MOSFET Array Dual P-CH 20V 2.3A 6-Pin TSOT-23 T/R (Alt: FDC6312P) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 11 Weeks, 0 Days | EBV - 3000 |
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Buy Now | |
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LCSC | 20V 2.3A 115m4.5V2.3A 960mW 400mV250uA SuperSOT-6 MOSFETs ROHS | 2643 |
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$0.2217 / $0.4280 | Buy Now |
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New Advantage Corporation | Dual P-Channel 20V 115 mOhm 1.8V PowerTrench Specified Mosfet SSOT-6 RoHS: Compliant Min Qty: 1 Package Multiple: 3000 | 60000 |
|
$0.3200 / $0.3429 | Buy Now |
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FDC6312P
onsemi
Buy Now
Datasheet
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FDC6312P
onsemi
Dual P-Channel PowerTrench® MOSFET, 1.8V Specified, -20V, -2.3A, 115mΩ, TSOT-23-6, 3000-REEL
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Pbfree Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ONSEMI | |
Part Package Code | TSOT-23-6 | |
Package Description | SUPERSOT-6 | |
Manufacturer Package Code | 419BL | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 9 Weeks | |
Samacsys Manufacturer | onsemi | |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 20 V | |
Drain Current-Max (ID) | 2.3 A | |
Drain-source On Resistance-Max | 0.115 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G6 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 2 | |
Number of Terminals | 6 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 0.96 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for FDC6312P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDC6312P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
FDC6310PS62Z | Fairchild Semiconductor Corporation | Check for Price | Small Signal Field-Effect Transistor, 2.2A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 | FDC6312P vs FDC6310PS62Z |
FDC6310P | onsemi | $0.3512 | Dual P-Channel PowerTrench® MOSFET, 2.5V Specified, -20V, -2.2A, 125mΩ, TSOT-23-6, 3000-REEL | FDC6312P vs FDC6310P |
FDC6312PD87Z | Fairchild Semiconductor Corporation | Check for Price | Small Signal Field-Effect Transistor, 2.3A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 | FDC6312P vs FDC6312PD87Z |
FDC6310PL99Z | Fairchild Semiconductor Corporation | Check for Price | Small Signal Field-Effect Transistor, 2.2A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 | FDC6312P vs FDC6310PL99Z |
FDC6310PD84Z | Fairchild Semiconductor Corporation | Check for Price | Small Signal Field-Effect Transistor, 2.2A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 | FDC6312P vs FDC6310PD84Z |
FTD1014 | SANYO Electric Co Ltd | Check for Price | Small Signal Field-Effect Transistor, 2A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TSSOP-8 | FDC6312P vs FTD1014 |