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Transistors / Small Signal Field-Effect Transistors / FDC658P
Datasheets
FDC658P by:

Single P-Channel Logic Level PowerTrench® MOSFET -30V, -4A, 50mΩ, TSOT-23-6, 3000-REEL

Part Details for FDC658P by onsemi

Results Overview of FDC658P by onsemi

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

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FDC658P Information

FDC658P by onsemi is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for FDC658P

Part # Distributor Description Stock Price Buy
DISTI # 9846441
Farnell MOSFET, P, SUPERSOT-6 RoHS: Compliant Min Qty: 5 Lead time: 53 Weeks, 2 Days Container: Cut Tape 13761
  • 5 $0.9617
  • 50 $0.6726
  • 100 $0.4673
  • 500 $0.3808
  • 1,500 $0.3460
$0.3460 / $0.9617 Buy Now
DISTI # 9846441RL
Farnell MOSFET, P, SUPERSOT-6 RoHS: Compliant Min Qty: 100 Lead time: 53 Weeks, 2 Days Container: Reel 13761
  • 100 $0.4673
  • 500 $0.3808
  • 1,500 $0.3460
$0.3460 / $0.4673 Buy Now
DISTI # 2985487
Farnell MOSFET, P-CH, -30V, -4A, 1.6W, SUPERSOT RoHS: Compliant Min Qty: 3000 Lead time: 15 Weeks, 1 Days Container: Reel 0
  • 3,000 $0.2956
  • 9,000 $0.2750
$0.2750 / $0.2956 Buy Now
DISTI # FDC658P
Avnet Americas Trans MOSFET P-CH 30V 4A 6-Pin SuperSOT - Tape and Reel (Alt: FDC658P) RoHS: Compliant Min Qty: 3572 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Reel 4170 Partner Stock
  • 3,572 $0.2391
  • 3,600 $0.2379
  • 7,200 $0.2366
  • 18,000 $0.2354
  • 36,000 $0.2342
$0.2342 / $0.2391 Buy Now
DISTI # FDC658P
Avnet Americas Trans MOSFET P-CH 30V 4A 6-Pin SuperSOT - Tape and Reel (Alt: FDC658P) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 12 Weeks, 0 Days Container: Reel 3000 Factory Stock
  • 3,000 $0.2571
  • 6,000 $0.2540
  • 12,000 $0.2510
  • 18,000 $0.2498
  • 24,000 $0.2480
$0.2480 / $0.2571 Buy Now
Bristol Electronics   2111
RFQ
Rochester Electronics Small Signal Field-Effect Transistor, 4A, 30V, P-Channel, MOSFET RoHS: Compliant Status: Active Min Qty: 1 2919
  • 1 $0.2928
  • 25 $0.2869
  • 100 $0.2752
  • 500 $0.2635
  • 1,000 $0.2489
$0.2489 / $0.2928 Buy Now
DISTI # FDC658P
TME Transistor: P-MOSFET, unipolar, -30V, -4A, 1.6W, SuperSOT-6 Min Qty: 1 80
  • 1 $0.4920
  • 10 $0.3700
  • 25 $0.3340
  • 100 $0.3090
  • 250 $0.2940
  • 500 $0.2650
  • 1,000 $0.2470
  • 3,000 $0.2350
$0.2350 / $0.4920 Buy Now
DISTI # FDC658P
Richardson RFPD POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 3000 0
  • 3,000 $0.2600
$0.2600 Buy Now
Chip 1 Exchange INSTOCK 2000
RFQ
DISTI # FDC658P
Avnet Silica Trans MOSFET PCH 30V 4A 6Pin SuperSOT (Alt: FDC658P) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 13 Weeks, 0 Days Silica - 0
Buy Now
DISTI # FDC658P
EBV Elektronik Trans MOSFET PCH 30V 4A 6Pin SuperSOT (Alt: FDC658P) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 14 Weeks, 0 Days EBV - 0
Buy Now
Flip Electronics Stock, ship today 4170
RFQ
New Advantage Corporation FM - LV FET RoHS: Compliant Min Qty: 1 Package Multiple: 3000 3000
  • 3,000 $0.3173
$0.3173 Buy Now

Part Details for FDC658P

FDC658P CAD Models

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FDC658P Part Data Attributes

Parametric Data
FDC658P onsemi
Buy Now Datasheet
Compare Parts:
FDC658P onsemi Single P-Channel Logic Level PowerTrench® MOSFET -30V, -4A, 50mΩ, TSOT-23-6, 3000-REEL
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ONSEMI
Part Package Code TSOT-23-6
Package Description SUPERSOT-6
Manufacturer Package Code 419BL
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 2 Days
Samacsys Manufacturer onsemi
Additional Feature LOGIC LEVEL COMPATIBLE
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 4 A
Drain-source On Resistance-Max 0.05 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G6
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 1.6 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FDC658P

This table gives cross-reference parts and alternative options found for FDC658P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDC658P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
FDC658P_NL Fairchild Semiconductor Corporation Check for Price Small Signal Field-Effect Transistor, 4A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 FDC658P vs FDC658P_NL
FDC658P Rochester Electronics LLC Check for Price 4000mA, 30V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SUPERSOT-6 FDC658P vs FDC658P

FDC658P Related Parts

FDC658P Frequently Asked Questions (FAQ)

  • The FDC658P can operate from -40°C to 150°C, making it suitable for high-reliability applications.

  • The FDC658P requires a bias voltage of 5V to 15V, and the recommended bias current is 1mA to 10mA. Ensure the bias voltage is stable and noise-free for optimal performance.

  • Use a multi-layer PCB with a solid ground plane to minimize noise and ensure good thermal conductivity. Place the FDC658P near a heat sink or thermal pad to dissipate heat efficiently.

  • Handle the FDC658P with ESD-protective equipment, such as wrist straps and mats. Ensure the PCB has ESD-protection components, like TVS diodes, and follow proper handling and storage procedures.

  • Use a low-impedance driver, such as a transistor or FET, to ensure fast switching times and minimize power consumption. The driver should be capable of sourcing and sinking current to ensure proper operation.

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