Part Details for FDD10AN06A0 by onsemi
Overview of FDD10AN06A0 by onsemi
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for FDD10AN06A0
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
58K8830
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Newark | N Channel Mosfet, 60V, 50A To-252Aa, Channel Type:N Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:50A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Onsemi FDD10AN06A0 Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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$1.2700 | Buy Now |
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DISTI #
FDD10AN06A0CT-ND
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DigiKey | MOSFET N-CH 60V 11A/50A TO252AA Min Qty: 1 Lead time: 25 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
4576 In Stock |
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$0.8416 / $1.9400 | Buy Now |
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DISTI #
FDD10AN06A0
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Avnet Americas | Trans MOSFET N-CH 60V 11A 3-Pin(2+Tab) TO-252AA T/R - Tape and Reel (Alt: FDD10AN06A0) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 25 Weeks, 0 Days Container: Reel | 0 |
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$0.8723 / $0.9765 | Buy Now |
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DISTI #
FDD10AN06A0
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Avnet Americas | Trans MOSFET N-CH 60V 11A 3-Pin(2+Tab) TO-252AA T/R - Tape and Reel (Alt: FDD10AN06A0) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 25 Weeks, 0 Days Container: Reel | 0 |
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$0.8723 / $0.9765 | Buy Now |
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DISTI #
512-FDD10AN06A0
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Mouser Electronics | MOSFET 60V 50a .15 Ohms/VGS=1V RoHS: Compliant | 9870 |
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$0.9300 / $1.9300 | Buy Now |
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Future Electronics | N-Channel 60 V 10.5 mOhm Surface Mount PowerTrench Mosfet TO-252AA RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0Reel |
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$0.8250 | Buy Now |
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Future Electronics | N-Channel 60 V 10.5 mOhm Surface Mount PowerTrench Mosfet TO-252AA RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0Reel |
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$0.8250 | Buy Now |
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Rochester Electronics | Power Field-Effect Transistor, 11A, 60V, 0.0105ohm, N-Channel, MOSFET, TO-252AA RoHS: Compliant Status: Active Min Qty: 1 | 2490 |
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$0.8070 / $0.9494 | Buy Now |
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DISTI #
FDD10AN06A0
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Avnet Americas | Trans MOSFET N-CH 60V 11A 3-Pin(2+Tab) TO-252AA T/R - Tape and Reel (Alt: FDD10AN06A0) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 25 Weeks, 0 Days Container: Reel | 0 |
|
$0.8723 / $0.9765 | Buy Now |
|
DISTI #
FDD10AN06A0
|
Avnet Americas | Trans MOSFET N-CH 60V 11A 3-Pin(2+Tab) TO-252AA T/R - Tape and Reel (Alt: FDD10AN06A0) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 25 Weeks, 0 Days Container: Reel | 0 |
|
$0.8723 / $0.9765 | Buy Now |
Part Details for FDD10AN06A0
FDD10AN06A0 CAD Models
FDD10AN06A0 Part Data Attributes
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FDD10AN06A0
onsemi
Buy Now
Datasheet
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Compare Parts:
FDD10AN06A0
onsemi
N-Channel PowerTrench® MOSFET 60V, 50A, 10.5mΩ, 2500-REEL
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| Pbfree Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Package Description | TO-252AA, 3 PIN | |
| Manufacturer Package Code | 369AS | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 37 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 429 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 11 A | |
| Drain-source On Resistance-Max | 0.0105 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 135 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FDD10AN06A0
This table gives cross-reference parts and alternative options found for FDD10AN06A0. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDD10AN06A0, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FDD10AN06A0_NL | Power Field-Effect Transistor, 11A I(D), 60V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252AA, 3 PIN | Fairchild Semiconductor Corporation | FDD10AN06A0 vs FDD10AN06A0_NL |
| FDD10AN06A0 | Power Field-Effect Transistor, 11A I(D), 60V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252AA, 3 PIN | Fairchild Semiconductor Corporation | FDD10AN06A0 vs FDD10AN06A0 |