Part Details for FDD2512 by Fairchild Semiconductor Corporation
Overview of FDD2512 by Fairchild Semiconductor Corporation
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
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Price & Stock for FDD2512
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 154 |
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RFQ | ||
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Rochester Electronics | 6.7A, 150V, 0.42ohm, N-Channel Power MOSFET, TO-252 RoHS: Compliant Status: Obsolete Min Qty: 1 | 9940 |
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$0.6962 / $0.8191 | Buy Now |
Part Details for FDD2512
FDD2512 CAD Models
FDD2512 Part Data Attributes
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FDD2512
Fairchild Semiconductor Corporation
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Datasheet
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FDD2512
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 6.7A I(D), 150V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
Part Package Code | TO-252 | |
Package Description | DPAK-3 | |
Pin Count | 3 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 90 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 150 V | |
Drain Current-Max (ID) | 6.7 A | |
Drain-source On Resistance-Max | 0.42 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252 | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 1.6 W | |
Pulsed Drain Current-Max (IDM) | 20 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for FDD2512
This table gives cross-reference parts and alternative options found for FDD2512. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDD2512, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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FDD2512 | 6.7A, 150V, 0.42ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3 | Rochester Electronics LLC | FDD2512 vs FDD2512 |
FDD2512_NL | Power Field-Effect Transistor, 6.7A I(D), 150V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | Fairchild Semiconductor Corporation | FDD2512 vs FDD2512_NL |