Part Details for FDD306P by Fairchild Semiconductor Corporation
Results Overview of FDD306P by Fairchild Semiconductor Corporation
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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FDD306P Information
FDD306P by Fairchild Semiconductor Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for FDD306P
Part # | Distributor | Description | Stock | Price | Buy | |
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Win Source Electronics | Trans MOSFET P-CH 12V 6.7A 3-Pin(2+Tab) DPAK T/R / MOSFET P-CH 12V 6.7A DPAK | 20331 |
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$0.3774 / $0.5661 | Buy Now |
Part Details for FDD306P
FDD306P CAD Models
FDD306P Part Data Attributes
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FDD306P
Fairchild Semiconductor Corporation
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Datasheet
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FDD306P
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 6.7A I(D), 12V, 0.028ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, TO-252, 3 PIN
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
Part Package Code | DPAK | |
Package Description | TO-252, 3 PIN | |
Pin Count | 3 | |
Manufacturer Package Code | TO252 (D-PAK), MOLDED, 3 LEAD,OPTION AA&AB | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 12 V | |
Drain Current-Max (ID) | 6.7 A | |
Drain-source On Resistance-Max | 0.028 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252 | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 52 W | |
Pulsed Drain Current-Max (IDM) | 54 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |