Datasheets
FDD306P by:

Power Field-Effect Transistor, 6.7A I(D), 12V, 0.028ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, TO-252, 3 PIN

Part Details for FDD306P by Fairchild Semiconductor Corporation

Results Overview of FDD306P by Fairchild Semiconductor Corporation

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

FDD306P Information

FDD306P by Fairchild Semiconductor Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for FDD306P

Part # Distributor Description Stock Price Buy
Win Source Electronics Trans MOSFET P-CH 12V 6.7A 3-Pin(2+Tab) DPAK T/R / MOSFET P-CH 12V 6.7A DPAK 20331
  • 90 $0.5661
  • 220 $0.4645
  • 335 $0.4500
  • 460 $0.4355
  • 595 $0.4210
  • 795 $0.3774
$0.3774 / $0.5661 Buy Now

Part Details for FDD306P

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FDD306P Part Data Attributes

FDD306P Fairchild Semiconductor Corporation
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FDD306P Fairchild Semiconductor Corporation Power Field-Effect Transistor, 6.7A I(D), 12V, 0.028ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, TO-252, 3 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code DPAK
Package Description TO-252, 3 PIN
Pin Count 3
Manufacturer Package Code TO252 (D-PAK), MOLDED, 3 LEAD,OPTION AA&AB
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 12 V
Drain Current-Max (ID) 6.7 A
Drain-source On Resistance-Max 0.028 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 52 W
Pulsed Drain Current-Max (IDM) 54 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

FDD306P Related Parts

FDD306P Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the FDD306P is -55°C to 150°C.

  • Yes, the FDD306P is designed for high-reliability applications and is qualified to automotive and industrial standards.

  • Yes, the FDD306P is suitable for use in switching power supplies due to its high voltage and current ratings, as well as its fast switching times.

  • The recommended gate drive voltage for the FDD306P is 10-15V, although the device can tolerate up to 20V.

  • Yes, the FDD306P is compatible with lead-free soldering processes and meets the requirements of the RoHS directive.

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