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Transistors / Power Field-Effect Transistors / FDD306P
Datasheets
FDD306P by:

P-Channel 1.8V Specified PowerTrench® MOSFET -12V, -6.7A, 28mΩ, DPAK-3 / TO-252-3, 2500-REEL

Part Details for FDD306P by onsemi

Results Overview of FDD306P by onsemi

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FDD306P Information

FDD306P by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for FDD306P

Part # Distributor Description Stock Price Buy
DISTI # 96K9867
Newark Mosfet, P, To-252, Channel Type:P Channel, Drain Source Voltage Vds:12V, Continuous Drain Current Id:6.7A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:4.5V, Gate Source Threshold Voltage Max:500Mv, Power Dissipation:52W Rohs Compliant: Yes |Onsemi FDD306P RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 4963
  • 1 $1.1800
  • 10 $1.0000
  • 25 $0.9220
  • 50 $0.8420
  • 100 $0.7630
  • 250 $0.7060
  • 500 $0.6490
  • 1,000 $0.6110
$0.6110 / $1.1800 Buy Now
DISTI # 64K0964
Newark Mosfet Transistor, P Channel, 6.7 A, 12 V, 90 Mohm, -4.5 V, -500 Mv Rohs Compliant: Yes |Onsemi FDD306P RoHS: Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 1 $0.4940
  • 3,000 $0.4730
  • 6,000 $0.4300
  • 12,000 $0.3870
  • 18,000 $0.3730
  • 30,000 $0.3650
$0.3650 / $0.4940 Buy Now
DISTI # FDD306P
Avnet Americas Trans MOSFET P-CH 12V 6.7A 3-Pin(2+Tab) TO-252AA T/R - Tape and Reel (Alt: FDD306P) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 13 Weeks, 0 Days Container: Reel 0
  • 2,500 $0.4087
  • 5,000 $0.4066
  • 10,000 $0.3413
  • 15,000 $0.3397
  • 20,000 $0.3373
$0.3373 / $0.4087 Buy Now
DISTI # FDD306P
TME Transistor: P-MOSFET, unipolar, -12V, -6.7A, 52W, DPAK Min Qty: 1 673
  • 1 $0.8590
  • 50 $0.6180
  • 100 $0.5040
  • 250 $0.4690
$0.4690 / $0.8590 Buy Now
DISTI # FDD306P
Richardson RFPD POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 2500 0
  • 2,500 $0.3600
$0.3600 Buy Now
DISTI # FDD306P
Avnet Silica Trans MOSFET PCH 12V 67A 3Pin2Tab TO252AA TR (Alt: FDD306P) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 14 Weeks, 0 Days Silica - 0
Buy Now
DISTI # FDD306P
EBV Elektronik Trans MOSFET PCH 12V 67A 3Pin2Tab TO252AA TR (Alt: FDD306P) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 14 Weeks, 0 Days EBV - 0
Buy Now
Wuhan P&S 12V,6.7A,P-Channel MOSFET Min Qty: 1 62
  • 1 $1.0000
  • 100 $0.6400
  • 500 $0.5300
  • 1,000 $0.4900
$0.4900 / $1.0000 Buy Now

Part Details for FDD306P

FDD306P CAD Models

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FDD306P Part Data Attributes

Parametric Data
FDD306P onsemi
Buy Now Datasheet
Compare Parts:
FDD306P onsemi P-Channel 1.8V Specified PowerTrench® MOSFET -12V, -6.7A, 28mΩ, DPAK-3 / TO-252-3, 2500-REEL
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ONSEMI
Part Package Code DPAK-3 / TO-252-3
Package Description TO-252, 3 PIN
Manufacturer Package Code 369AS
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 11 Weeks
Samacsys Manufacturer onsemi
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 12 V
Drain Current-Max (ID) 6.7 A
Drain-source On Resistance-Max 0.028 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 52 W
Pulsed Drain Current-Max (IDM) 54 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

FDD306P Related Parts

FDD306P Frequently Asked Questions (FAQ)

  • The FDD306P can operate from -40°C to 150°C, making it suitable for high-reliability applications.

  • The FDD306P requires a bias voltage of 12V to 15V, and a bias current of 1mA to 5mA. Ensure the bias circuit is designed to provide a stable voltage and current within these ranges.

  • Use a multi-layer PCB with a solid ground plane to minimize thermal resistance. Ensure good thermal conductivity between the device and the heat sink, and use thermal interface material (TIM) if necessary.

  • Use ESD protection devices, such as TVS diodes or ESD arrays, on the input and output pins. Ensure proper handling and storage procedures to prevent ESD damage.

  • The maximum power dissipation for the FDD306P is 2.5W. Ensure the device is properly heat-sinked and the thermal design is optimized to prevent overheating.

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