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N-Channel PowerTrench® MOSFET, 20V, 50A, 9mΩ, 2500-REEL
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
31Y1355
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Newark | Mosfet, N Ch, 20V, 50A, To-252Aa-3, Channel Type:N Channel, Drain Source Voltage Vds:20V, Continuous Drain Current Id:50A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1V Rohs Compliant: Yes |Onsemi FDD3706 Min Qty: 5 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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$0.4790 / $1.1100 | Buy Now |
DISTI #
28H9671
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Newark | Transistor, mosfet, n-Channel,20V V(Br)Dss,14.7A I(D),to-252Aa Rohs Compliant: Yes |Onsemi FDD3706 Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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Buy Now | |
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Rochester Electronics | Power Field-Effect Transistor, 14.7A, 20V, 0.009ohm, N-Channel, MOSFET, TO-252 RoHS: Compliant Status: End of Life / Last Time Buy Min Qty: 1 | 880 |
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$0.5157 / $0.6067 | Buy Now |
DISTI #
FDD3706
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Maritex | Transistor: N-MOSFET, unipolar, 20V, 50A, 0.009ohm, 44W, -55+175 deg.C, SMD, TO252(DPAK) Min Qty: 1 Package Multiple: 1 | 247 |
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$0.5750 / $0.7670 | Buy Now |
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FDD3706
onsemi
Buy Now
Datasheet
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Compare Parts:
FDD3706
onsemi
N-Channel PowerTrench® MOSFET, 20V, 50A, 9mΩ, 2500-REEL
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Pbfree Code | Yes | |
Part Life Cycle Code | End Of Life | |
Ihs Manufacturer | ONSEMI | |
Package Description | DPAK-3 | |
Manufacturer Package Code | 369AS | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 4 Weeks | |
Samacsys Manufacturer | onsemi | |
Avalanche Energy Rating (Eas) | 60 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 20 V | |
Drain Current-Max (ID) | 14.7 A | |
Drain-source On Resistance-Max | 0.009 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252 | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 44 W | |
Pulsed Drain Current-Max (IDM) | 60 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for FDD3706. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDD3706, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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FDD3706 | Power Field-Effect Transistor, 14.7A I(D), 20V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | Fairchild Semiconductor Corporation | FDD3706 vs FDD3706 |
FDD3706 | 14.7A, 20V, 0.009ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3 | Rochester Electronics LLC | FDD3706 vs FDD3706 |