Datasheets
FDD390N15ALZ by:

Power Field-Effect Transistor, 26A I(D), 150V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3/2

Part Details for FDD390N15ALZ by Fairchild Semiconductor Corporation

Overview of FDD390N15ALZ by Fairchild Semiconductor Corporation

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Applications Industrial Automation Electronic Manufacturing

Price & Stock for FDD390N15ALZ

Part # Distributor Description Stock Price Buy
Bristol Electronics   8
RFQ
Chip1Cloud MOSFET N-CH 150V 26A DPAK-3 155767
RFQ
Win Source Electronics MOSFET N-CH 150V 26A DPAK-3 46372
  • 50 $1.0460
  • 120 $0.8580
  • 185 $0.8320
  • 250 $0.8050
  • 325 $0.7780
  • 430 $0.6980
$0.6980 / $1.0460 Buy Now

Part Details for FDD390N15ALZ

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FDD390N15ALZ Part Data Attributes:

FDD390N15ALZ Fairchild Semiconductor Corporation
Buy Now Datasheet
Compare Parts:
FDD390N15ALZ Fairchild Semiconductor Corporation Power Field-Effect Transistor, 26A I(D), 150V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3/2
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code DPAK
Package Description ROHS COMPLIANT, PLASTIC, DPAK-3/2
Pin Count 3
Manufacturer Package Code TO252 (D-PAK), MOLDED, 3 LEAD,OPTION AA&AB
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Avalanche Energy Rating (Eas) 96 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 150 V
Drain Current-Max (ID) 26 A
Drain-source On Resistance-Max 0.042 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 63 W
Pulsed Drain Current-Max (IDM) 104 A
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

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