Part Details for FDD4N60NZ by Fairchild Semiconductor Corporation
Overview of FDD4N60NZ by Fairchild Semiconductor Corporation
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Applications
Energy and Power Systems
Medical Imaging
Robotics and Drones
Price & Stock for FDD4N60NZ
Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | FDD4N60NZ - Power Field-Effect Transistor, 3.4A, 600V, 2.5ohm, N-Channel, MOSFET, TO-252AA RoHS: Compliant Status: End of Life / Last Time Buy Min Qty: 1 | 2500 |
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$0.3689 / $0.4340 | Buy Now |
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ComSIT USA | N-CHANNEL UNIFET II MOSFET Power Field-Effect Transistor, 3.4A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA RoHS: Compliant | Europe - 2500 |
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Part Details for FDD4N60NZ
FDD4N60NZ CAD Models
FDD4N60NZ Part Data Attributes
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FDD4N60NZ
Fairchild Semiconductor Corporation
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Datasheet
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FDD4N60NZ
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 3.4A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3/2
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
Part Package Code | DPAK | |
Package Description | ROHS COMPLIANT, PLASTIC, DPAK-3/2 | |
Pin Count | 3 | |
Manufacturer Package Code | TO252 (D-PAK), MOLDED, 3 LEAD,OPTION AA&AB | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Avalanche Energy Rating (Eas) | 179.2 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 3.4 A | |
Drain-source On Resistance-Max | 2.5 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252AA | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 114 W | |
Pulsed Drain Current-Max (IDM) | 13.6 A | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |