| Part # | Manufacturer | Description | Stock | Price | Buy | ||
|---|---|---|---|---|---|---|---|
|
DISTI #
67R2046
|
Newark | Mosfet Transistor, Full Reel, Transistor Polarity:P Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:15A, On Resistance Rds(On):0.1Ohm, Transistor Mounting:Surface Mount, Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes |Onsemi FDD5614P RoHS: Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
$0.2480 / $0.3150 | Buy Now | |
|
DISTI #
82C2455
|
Newark | P Channel Mosfet, 60V, 15A, To-252, Channel Type:P Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:15A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1.6V Rohs Compliant: Yes |Onsemi FDD5614P RoHS: Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
|
Buy Now | ||
|
DISTI #
68X2645
|
Newark | Mosfet Transistor, P Channel, -15 A, -60 V, 100 Mohm, -10 V, -1.6 V Rohs Compliant: Yes |Onsemi FDD5614P RoHS: Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
|
Buy Now | ||
|
DISTI #
23M6242
|
Newark | Mosfet, P, -60V, -15A, D-Pak, Transistor Polarity:P Channel, Continuous Drain Current Id:-15A, Drain Source Voltage Vds:-60V, On Resistance Rds(On):0.1Ohm, Rds(On) Test Voltage Vgs:-10V, Threshold Voltage Vgs:-1.6V, Power Dissipationrohs Compliant: Yes |Onsemi FDD5614P RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
|
Buy Now | ||
|
DISTI #
FDD5614P
|
Avnet Americas | Trans MOSFET P-CH 60V 15A 3-Pin(2+Tab) TO-252 T/R - Tape and Reel (Alt: FDD5614P) RoHS: Compliant Min Qty: 1163 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Reel | 240000 Partner Stock |
|
$0.5332 / $0.6364 | Buy Now | |
| Ameya Holding Limited | P-Channel 60 V 100 mOhm Surface Mount PowerTrench Mosfet TO-252-3 | 2500 |
|
RFQ | |||
| Flip Electronics | Stock, ship today | 240000 |
|
RFQ | |||
| LCSC | TO-252-2 MOSFETs ROHS | 3207 |
|
$0.2670 / $0.6110 | Buy Now |
|
|
|
|---|---|
|
Pbfree Code
|
Yes
|
|
Part Life Cycle Code
|
Obsolete
|
|
Ihs Manufacturer
|
ONSEMI
|
|
Package Description
|
TO-252, 3 PIN
|
|
Manufacturer Package Code
|
369AS
|
|
Reach Compliance Code
|
not_compliant
|
|
ECCN Code
|
EAR99
|
|
Factory Lead Time
|
2 Days
|
|
Samacsys Manufacturer
|
onsemi
|
|
Avalanche Energy Rating (Eas)
|
90 mJ
|
|
Case Connection
|
DRAIN
|
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
|
DS Breakdown Voltage-Min
|
60 V
|
|
Drain Current-Max (ID)
|
15 A
|
|
Drain-source On Resistance-Max
|
0.1 Ω
|
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
|
JEDEC-95 Code
|
TO-252
|
|
JESD-30 Code
|
R-PSSO-G2
|
|
JESD-609 Code
|
e3
|
|
Moisture Sensitivity Level
|
1
|
|
Number of Elements
|
1
|
|
Number of Terminals
|
2
|
|
Operating Mode
|
ENHANCEMENT MODE
|
|
Operating Temperature-Max
|
175 °C
|
|
Package Body Material
|
PLASTIC/EPOXY
|
|
Package Shape
|
RECTANGULAR
|
|
Package Style
|
SMALL OUTLINE
|
|
Peak Reflow Temperature (Cel)
|
260
|
|
Polarity/Channel Type
|
P-CHANNEL
|
|
Power Dissipation-Max (Abs)
|
42 W
|
|
Pulsed Drain Current-Max (IDM)
|
45 A
|
|
Qualification Status
|
Not Qualified
|
|
Surface Mount
|
YES
|
|
Terminal Finish
|
MATTE TIN
|
|
Terminal Form
|
GULL WING
|
|
Terminal Position
|
SINGLE
|
|
Time@Peak Reflow Temperature-Max (s)
|
30
|
|
Transistor Application
|
SWITCHING
|
|
Transistor Element Material
|
SILICON
|
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FDD5614P_NL | Power Field-Effect Transistor, 15A I(D), 60V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, TO-252, 3 PIN | Fairchild Semiconductor Corporation | FDD5614P vs FDD5614P_NL |
