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N-Channel Power Trench® MOSFET 40V, 50A, 6.7mΩ, 2500-REEL
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
07AH3899
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Newark | Mosfet, N-Ch, 50A, 40V, To-252, Transistor Polarity:N Channel, Continuous Drain Current Id:50A, Drain Source Voltage Vds:40V, On Resistance Rds(On):0.0058Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:1.8V, Power Rohs Compliant: Yes |Onsemi FDD8453LZ Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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Buy Now | |
DISTI #
86AK4933
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Newark | Mosfet, N-Ch, 40V, 50A, To-252 Rohs Compliant: Yes |Onsemi FDD8453LZ Min Qty: 2500 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
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$0.7740 / $0.9680 | Buy Now |
DISTI #
FDD8453LZCT-ND
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DigiKey | MOSFET N-CH 40V 16.4A/50A DPAK Min Qty: 1 Lead time: 13 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
415 In Stock |
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$1.0476 / $1.6500 | Buy Now |
DISTI #
512-FDD8453LZ
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Mouser Electronics | MOSFET 40V N-Channel PowerTrench RoHS: Compliant | 39900 |
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$1.0400 / $1.6400 | Buy Now |
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Bristol Electronics | 90 |
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RFQ | ||
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 50A I(D), 40V, 0.0106OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252AA | 72 |
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$1.0000 / $2.0000 | Buy Now |
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Ameya Holding Limited | Min Qty: 2500 | 687 |
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$0.9660 / $0.9959 | Buy Now |
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Flip Electronics | Stock | 55000 |
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RFQ |
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FDD8453LZ
onsemi
Buy Now
Datasheet
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FDD8453LZ
onsemi
N-Channel Power Trench® MOSFET 40V, 50A, 6.7mΩ, 2500-REEL
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Pbfree Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | ONSEMI | |
Package Description | TO-252, D-PAK-3 | |
Manufacturer Package Code | 369AS | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 39 Weeks | |
Samacsys Manufacturer | onsemi | |
Avalanche Energy Rating (Eas) | 253 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 40 V | |
Drain Current-Max (ID) | 50 A | |
Drain-source On Resistance-Max | 0.0106 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252AA | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 65 W | |
Pulsed Drain Current-Max (IDM) | 100 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |