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FDD8453LZ by:

N-Channel Power Trench® MOSFET 40V, 50A, 6.7mΩ, 2500-REEL

Part Details for FDD8453LZ by onsemi

Overview of FDD8453LZ by onsemi

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Price & Stock for FDD8453LZ

Part # Distributor Description Stock Price Buy
DISTI # 07AH3899
Newark Mosfet, N-Ch, 50A, 40V, To-252, Transistor Polarity:N Channel, Continuous Drain Current Id:50A, Drain Source Voltage Vds:40V, On Resistance Rds(On):0.0058Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:1.8V, Power Rohs Compliant: Yes |Onsemi FDD8453LZ Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 0
Buy Now
DISTI # 86AK4933
Newark Mosfet, N-Ch, 40V, 50A, To-252 Rohs Compliant: Yes |Onsemi FDD8453LZ Min Qty: 2500 Package Multiple: 1 Date Code: 1 Container: Reel 0
  • 2,500 $0.9680
  • 5,000 $0.8910
  • 10,000 $0.8150
  • 15,000 $0.7900
  • 25,000 $0.7740
$0.7740 / $0.9680 Buy Now
DISTI # FDD8453LZCT-ND
DigiKey MOSFET N-CH 40V 16.4A/50A DPAK Min Qty: 1 Lead time: 13 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 415
In Stock
  • 1 $1.6500
  • 10 $1.3470
  • 100 $1.0476
$1.0476 / $1.6500 Buy Now
DISTI # 512-FDD8453LZ
Mouser Electronics MOSFET 40V N-Channel PowerTrench RoHS: Compliant 39900
  • 1 $1.6400
  • 10 $1.3500
  • 100 $1.0500
  • 2,500 $1.0400
$1.0400 / $1.6400 Buy Now
Bristol Electronics   90
RFQ
Quest Components POWER FIELD-EFFECT TRANSISTOR, 50A I(D), 40V, 0.0106OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252AA 72
  • 1 $2.0000
  • 14 $1.2000
  • 51 $1.0000
$1.0000 / $2.0000 Buy Now
Ameya Holding Limited   Min Qty: 2500 687
  • 2,500 $0.9959
  • 12,500 $0.9660
$0.9660 / $0.9959 Buy Now
Flip Electronics Stock 55000
RFQ

Part Details for FDD8453LZ

FDD8453LZ CAD Models

FDD8453LZ Part Data Attributes:

FDD8453LZ onsemi
Buy Now Datasheet
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FDD8453LZ onsemi N-Channel Power Trench® MOSFET 40V, 50A, 6.7mΩ, 2500-REEL
Pbfree Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer ONSEMI
Package Description TO-252, D-PAK-3
Manufacturer Package Code 369AS
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 39 Weeks
Samacsys Manufacturer onsemi
Avalanche Energy Rating (Eas) 253 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V
Drain Current-Max (ID) 50 A
Drain-source On Resistance-Max 0.0106 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 65 W
Pulsed Drain Current-Max (IDM) 100 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

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