Part Details for FDD86580_F085 by onsemi
Overview of FDD86580_F085 by onsemi
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Available Datasheets
Part # | Manufacturer | Description | Datasheet |
---|---|---|---|
UPD78F0856MAA-FAA-G | Renesas Electronics Corporation | 8-bit Microcontrollers (Non Promotion), , / |
Price & Stock for FDD86580_F085
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
FDD86580_F085
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Avnet Americas | Trans MOSFET N-CH 60V 50A 3-Pin TO-252 T/R - Tape and Reel (Alt: FDD86580_F085) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0 |
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RFQ |
Part Details for FDD86580_F085
FDD86580_F085 CAD Models
FDD86580_F085 Part Data Attributes
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FDD86580_F085
onsemi
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Datasheet
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FDD86580_F085
onsemi
60 V N-Channel PowerTrench® MOSFET, TO-252 3L (DPAK), 5000-TAPE REEL
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | ON SEMICONDUCTOR | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Manufacturer Package Code | TO252A03 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | onsemi | |
Avalanche Energy Rating (Eas) | 24 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain-source On Resistance-Max | 0.01 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252AA | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 75 W | |
Reference Standard | AEC-Q101 | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 30 ns | |
Turn-on Time-Max (ton) | 34 ns |