Findchips: fdd9507l-f085 details by onsemi

Results Overview of FDD9507L-F085 by onsemi

Distributor Offerings: (1 listing)
Number of FFF Equivalents: (0 replacements)
CAD Models: (Available)
Number of Functional Equivalents: (3 options)
Part Data Attributes: (Available)
Reference Designs: (Not Available)

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Applications Consumer Electronics Industrial Automation Energy and Power Systems Renewable Energy Motor control systems

FDD9507L-F085 Information

FDD9507L-F085 by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Part #	Manufacturer	Description	Datasheet
UPD78F0856MAA-FAA-G	Renesas Electronics Corporation	8-bit Microcontrollers (Non Promotion), , /

Part #	Distributor	Description	Stock	Price	Buy
FDD9507L-F085	Rochester Electronics	FDD9507L_F085 - P-Channel MOSFET RoHS: Not Compliant Status: End of Life / Last Time Buy Min Qty: 1	7500	1 $1.2100 25 $1.1900 100 $1.1400 500 $1.0900 1,000 $1.0300	$1.0300 / $1.2100	Buy Now

Part Details for FDD9507L-F085

FDD9507L-F085 CAD Models

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FDD9507L-F085 Part Data Attributes

Parametric Data

Show differences only	FDD9507L-F085 onsemi Buy Now Datasheet	Buy Now	Compare Parts: FDD9507L-F085 onsemi P-Channel POWERTRENCH® MOSFET, -40 V, -100 A, 4.4 mΩ P-Channel POWERTRENCH® MOSFET, -40 V, -100 A, 4.4 mΩ, DPAK-3 / TO-252-3, 2500-REEL, Automotive Qualified

Pbfree Code	Yes
Rohs Code	Yes
Part Life Cycle Code	Obsolete
Ihs Manufacturer	ONSEMI
Part Package Code	DPAK-3 / TO-252-3
Manufacturer Package Code	369AS
Reach Compliance Code	not_compliant
ECCN Code	EAR99
Factory Lead Time	76 Weeks
Samacsys Manufacturer	onsemi
Avalanche Energy Rating (Eas)	259 mJ
Case Connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	40 V
Drain-source On Resistance-Max	0.0072 Ω
FET Technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code	TO-252AA
JESD-30 Code	R-PSSO-G2
JESD-609 Code	e3
Moisture Sensitivity Level	1
Number of Elements	1
Number of Terminals	2
Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	175 °C
Operating Temperature-Min	-55 °C
Package Body Material	PLASTIC/EPOXY
Package Shape	RECTANGULAR
Package Style	SMALL OUTLINE
Peak Reflow Temperature (Cel)	260
Polarity/Channel Type	P-CHANNEL
Power Dissipation-Max (Abs)	227 W
Reference Standard	AEC-Q101
Surface Mount	YES
Terminal Finish	Matte Tin (Sn) - annealed
Terminal Form	GULL WING
Terminal Position	SINGLE
Time@Peak Reflow Temperature-Max (s)	30
Transistor Application	SWITCHING
Transistor Element Material	SILICON
Turn-off Time-Max (toff)	710 ns
Turn-on Time-Max (ton)	21 ns

Alternate Parts for FDD9507L-F085

This table gives cross-reference parts and alternative options found for FDD9507L-F085. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDD9507L-F085, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number	Manufacturer	Composite Price	Description	Compare
IPB80P04P4L-06	Infineon Technologies AG	Check for Price	Power Field-Effect Transistor, 80A I(D), 40V, 0.0064ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN	FDD9507L-F085 vs IPB80P04P4L-06
IPB80P04P4L06ATMA1	Infineon Technologies AG	Check for Price	Power Field-Effect Transistor, 80A I(D), 40V, 0.0064ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN	FDD9507L-F085 vs IPB80P04P4L06ATMA1
IPD85P04P4L-06	Infineon Technologies AG	Check for Price	Power Field-Effect Transistor, 85A I(D), 40V, 0.0064ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3	FDD9507L-F085 vs IPD85P04P4L-06

FDD9507L-F085 Frequently Asked Questions (FAQ)

A 2-layer or 4-layer PCB with a thermal relief pattern and a solid ground plane is recommended. Ensure a minimum of 1 oz copper thickness and a thermal via array under the device to facilitate heat dissipation.
Monitor the device's junction temperature, drain-source voltage, and drain current to ensure they remain within the specified limits. Implement thermal monitoring and overcurrent protection to prevent damage.
Handle the device with ESD-protective materials and equipment. Ensure a grounded wrist strap or mat is used during handling. Avoid touching the device's pins or leads, and store the device in an ESD-protective package when not in use.
Yes, the FDD9507L-F085 is qualified for automotive and high-reliability applications. However, ensure you follow the recommended design and manufacturing guidelines, and consult with onsemi's application engineers for specific requirements and support.
Follow the recommended soldering profile: peak temperature 260°C, time above 217°C 60-90 seconds. For rework, use a low-temperature soldering iron (<350°C) and a solder with a melting point below 217°C.

Part Details for FDD9507L-F085 by onsemi

Results Overview of FDD9507L-F085 by onsemi

FDD9507L-F085 Information

Available Datasheets

Price & Stock for FDD9507L-F085