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N-Channel Dual Cool™ 33 PowerTrench® SyncFET™ 25V, 40A, 3.5mΩ, 3000-REEL
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
FDMC2514SDC
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Avnet Americas | Trans MOSFET N-CH 25V 24A 8-Pin Power 33 T/R - Tape and Reel (Alt: FDMC2514SDC) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0 |
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RFQ | |
DISTI #
FDMC2514SDC
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Avnet Americas | Trans MOSFET N-CH 25V 24A 8-Pin Power 33 T/R - Tape and Reel (Alt: FDMC2514SDC) RoHS: Compliant Min Qty: 527 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Reel | 240327 Partner Stock |
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$1.1780 / $1.4060 | Buy Now |
DISTI #
FDMC2514SDC
|
Avnet Americas | Trans MOSFET N-CH 25V 24A 8-Pin Power 33 T/R - Tape and Reel (Alt: FDMC2514SDC) RoHS: Compliant Min Qty: 527 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Reel | 240327 Partner Stock |
|
$1.1780 / $1.4060 | Buy Now |
DISTI #
FDMC2514SDC
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Avnet Americas | Trans MOSFET N-CH 25V 24A 8-Pin Power 33 T/R - Tape and Reel (Alt: FDMC2514SDC) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0 |
|
RFQ | |
DISTI #
FDMC2514SDC
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Avnet Silica | Trans MOSFET N-CH 25V 24A 8-Pin Power 33 T/R (Alt: FDMC2514SDC) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 1 Weeks, 2 Days | Silica - 0 |
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Buy Now | |
DISTI #
2083245
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Farnell | MOSFET, N CH, 25V, 40A, POWER33 RoHS: Compliant Min Qty: 1 Lead time: 11 Weeks, 1 Days Container: Each | 0 |
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$0.5285 / $1.2774 | Buy Now |
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Flip Electronics | Stock, ship today | 240327 |
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$0.9500 | RFQ |
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FDMC2514SDC
onsemi
Buy Now
Datasheet
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Compare Parts:
FDMC2514SDC
onsemi
N-Channel Dual Cool™ 33 PowerTrench® SyncFET™ 25V, 40A, 3.5mΩ, 3000-REEL
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Pbfree Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | ONSEMI | |
Package Description | QFN-8 | |
Manufacturer Package Code | 483AL | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | onsemi | |
Additional Feature | ULTRA-LOW RESISTANCE | |
Avalanche Energy Rating (Eas) | 84 mJ | |
Case Connection | DRAIN SOURCE | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 25 V | |
Drain Current-Max (ID) | 24 A | |
Drain-source On Resistance-Max | 0.0035 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | MO-240BA | |
JESD-30 Code | S-PDSO-N5 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 5 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | SQUARE | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 60 W | |
Pulsed Drain Current-Max (IDM) | 200 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | NO LEAD | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |