Datasheets
FDMC6679AZ by:

Power Field-Effect Transistor, 11.5A I(D), 30V, 0.01ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, 3.30 X 3.30 MM, ROHS COMPLIANT, MLP, 8 PIN

Part Details for FDMC6679AZ by Fairchild Semiconductor Corporation

Results Overview of FDMC6679AZ by Fairchild Semiconductor Corporation

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FDMC6679AZ Information

FDMC6679AZ by Fairchild Semiconductor Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for FDMC6679AZ

Part # Distributor Description Stock Price Buy
Bristol Electronics   2983
RFQ
Bristol Electronics   Min Qty: 4 1513
  • 4 $1.5000
  • 15 $0.9750
  • 53 $0.5625
  • 179 $0.4800
  • 387 $0.4200
  • 918 $0.3900
$0.3900 / $1.5000 Buy Now
Bristol Electronics   57
RFQ
Rochester Electronics Power Field-Effect Transistor, 11.5A, 30V, 0.01ohm, P-Channel, MOSFET RoHS: Compliant Status: Not Recommended for New Designs Min Qty: 1 69
  • 1 $0.5692
  • 25 $0.5578
  • 100 $0.5350
  • 500 $0.5123
  • 1,000 $0.4838
$0.4838 / $0.5692 Buy Now
Win Source Electronics Trans MOSFET P-CH Si 30V 11.5A 8-Pin WDFN EP T/R / MOSFET P-CH 30V POWER33 150000
  • 75 $0.7070
  • 155 $0.6614
  • 235 $0.6386
  • 340 $0.5930
  • 440 $0.5702
  • 550 $0.5474
$0.5474 / $0.7070 Buy Now

Part Details for FDMC6679AZ

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FDMC6679AZ Part Data Attributes

FDMC6679AZ Fairchild Semiconductor Corporation
Buy Now Datasheet
Compare Parts:
FDMC6679AZ Fairchild Semiconductor Corporation Power Field-Effect Transistor, 11.5A I(D), 30V, 0.01ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, 3.30 X 3.30 MM, ROHS COMPLIANT, MLP, 8 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code MLP
Package Description 3.30 X 3.30 MM, ROHS COMPLIANT, MLP, 8 PIN
Pin Count 8
Manufacturer Package Code 8LD,MLP,DUAL, 3.3MM SQUARE
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 11.5 A
Drain-source On Resistance-Max 0.01 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code S-PDSO-N5
JESD-609 Code e4
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 5
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape SQUARE
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 41 W
Pulsed Drain Current-Max (IDM) 32 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish NICKEL PALLADIUM GOLD
Terminal Form NO LEAD
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FDMC6679AZ

This table gives cross-reference parts and alternative options found for FDMC6679AZ. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDMC6679AZ, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
FDZ206P Rochester Electronics LLC Check for Price 13A, 20V, 0.0095ohm, P-CHANNEL, Si, POWER, MOSFET, ULTRA THIN, BGA-30 FDMC6679AZ vs FDZ206P
FDZ208P Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 12.5A I(D), 30V, 0.0105ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ULTRA THIN, BGA-30 FDMC6679AZ vs FDZ208P
FDZ206P_NL Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 13A I(D), 20V, 0.0095ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ULTRA THIN, BGA-30 FDMC6679AZ vs FDZ206P_NL
FDMC7672 Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 16.9A I(D), 30V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 3.30 X 3.30 MM, ROHS COMPLIANT, MLP, 8 PIN FDMC6679AZ vs FDMC7672

FDMC6679AZ Related Parts

FDMC6679AZ Frequently Asked Questions (FAQ)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Ensure a low thermal resistance path from the device to the heat sink or PCB.

  • Implement a robust thermal management system, including a heat sink, thermal interface material, and a cooling fan if necessary. Monitor junction temperature and adjust the system design accordingly.

  • Focus on the input filter design, ensuring a low-pass filter with a cutoff frequency below the switching frequency. Use a common-mode choke and a differential-mode inductor to minimize EMI emissions.

  • Use a dedicated gate driver IC with a high current capability and a low output impedance. Ensure a short gate drive trace length and a low inductance path to minimize ringing and oscillations.

  • Implement a fast and accurate overcurrent detection mechanism, such as a sense resistor and a comparator. Ensure a fast response time and a robust fault detection algorithm to prevent damage to the device.

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