Datasheets
FDMC8882 by:

Power Field-Effect Transistor, 10.5A I(D), 30V, 0.0143ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 3.30 X 3.30 MM, ROHS COMPLIANT, MLP, 8 PIN

Part Details for FDMC8882 by Fairchild Semiconductor Corporation

Overview of FDMC8882 by Fairchild Semiconductor Corporation

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Price & Stock for FDMC8882

Part # Distributor Description Stock Price Buy
Bristol Electronics   Min Qty: 5 185
  • 5 $1.1250
  • 19 $0.7313
  • 70 $0.4219
$0.4219 / $1.1250 Buy Now
Quest Components POWER FIELD-EFFECT TRANSISTOR, 10.5A I(D), 30V, 0.0143OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET 1004
  • 1 $1.2975
  • 78 $0.6488
  • 309 $0.5190
$0.5190 / $1.2975 Buy Now
Quest Components POWER FIELD-EFFECT TRANSISTOR, 10.5A I(D), 30V, 0.0143OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET 148
  • 1 $1.5000
  • 18 $0.7500
  • 81 $0.4500
$0.4500 / $1.5000 Buy Now
Chip1Cloud MOSFET N-CH 30V 8-MLP 3000
RFQ

Part Details for FDMC8882

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FDMC8882 Part Data Attributes:

FDMC8882 Fairchild Semiconductor Corporation
Buy Now Datasheet
Compare Parts:
FDMC8882 Fairchild Semiconductor Corporation Power Field-Effect Transistor, 10.5A I(D), 30V, 0.0143ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 3.30 X 3.30 MM, ROHS COMPLIANT, MLP, 8 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code MLP
Package Description 3.30 X 3.30 MM, ROHS COMPLIANT, MLP, 8 PIN
Pin Count 8
Manufacturer Package Code 8LD,MLP,DUAL, 3.3MM SQUARE
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Additional Feature ULTRA-LOW RESISTANCE
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 10.5 A
Drain-source On Resistance-Max 0.0143 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code S-PDSO-N5
JESD-609 Code e4
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 5
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape SQUARE
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 18 W
Pulsed Drain Current-Max (IDM) 40 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish NICKEL PALLADIUM GOLD
Terminal Form NO LEAD
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FDMC8882

This table gives cross-reference parts and alternative options found for FDMC8882. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDMC8882, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FDMC8878 Power Field-Effect Transistor, 9.6A I(D), 30V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 3.30 X 3.30 MM, 0.80 MM HEIGHT, ROHS COMPLIANT, MLP, 8 PIN Fairchild Semiconductor Corporation FDMC8882 vs FDMC8878
FDMC8884 Power Field-Effect Transistor, 9A I(D), 30V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 3.30 X 3.30 MM, ROHS COMPLIANT, MO-229, MLP-8 Fairchild Semiconductor Corporation FDMC8882 vs FDMC8884

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