Datasheets
FDMS004N08C by: onsemi

N-Channel Shielded Gate PowerTrench® MOSFET 80V, 126A, 4.0mΩ, 3000-REEL

Part Details for FDMS004N08C by onsemi

Overview of FDMS004N08C by onsemi

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Price & Stock for FDMS004N08C

Part # Distributor Description Stock Price Buy
DISTI # 488-FDMS004N08CCT-ND
DigiKey MOSFET N-CH 80V 126A 8PQFN Min Qty: 1 Lead time: 24 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 2945
In Stock
  • 1 $2.7000
  • 10 $2.2450
  • 100 $1.7869
  • 500 $1.5120
  • 1,000 $1.2829
  • 3,000 $1.2188
  • 6,000 $1.1730
$1.1730 / $2.7000 Buy Now
DISTI # FDMS004N08C
Avnet Americas PowerTrench MOSFET N-Channel Shielded Gate 80 V 126 A 4m Ohm 8-Pin Power 56 T/R - Tape and Reel (Alt: FDMS004N08C) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 24 Weeks, 0 Days Container: Reel 9000 Factory Stock
  • 3,000 $1.3610
  • 6,000 $1.3247
  • 12,000 $1.2884
  • 18,000 $1.2521
  • 24,000 $1.2158
$1.2158 / $1.3610 Buy Now
DISTI # 512-FDMS004N08C
Mouser Electronics MOSFET 80V/20V N-Channel PTNG MOSFET 0
  • 1 $2.7000
  • 10 $2.2500
  • 100 $1.7900
  • 500 $1.5200
  • 1,000 $1.2900
  • 3,000 $1.2100
  • 6,000 $1.1700
$1.1700 / $2.7000 Order Now
Bristol Electronics   Min Qty: 2 342
  • 2 $3.0000
  • 8 $2.2500
  • 24 $1.8750
  • 81 $1.1250
  • 268 $1.0500
$1.0500 / $3.0000 Buy Now
Quest Components   273
  • 1 $4.0000
  • 101 $1.4000
  • 215 $1.3000
$1.3000 / $4.0000 Buy Now
Rochester Electronics FDMS004N08C - N-Channel Shielded Gate PowerTrench MOSFET 80V, 126A RoHS: Compliant Status: Active Min Qty: 1 13779
  • 1 $1.3200
  • 25 $1.3000
  • 100 $1.2400
  • 500 $1.1900
  • 1,000 $1.1200
$1.1200 / $1.3200 Buy Now
DISTI # FDMS004N08C
Avnet Americas PowerTrench MOSFET N-Channel Shielded Gate 80 V 126 A 4m Ohm 8-Pin Power 56 T/R - Tape and Reel (Alt: FDMS004N08C) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 24 Weeks, 0 Days Container: Reel 9000 Factory Stock
  • 3,000 $1.3610
  • 6,000 $1.3247
  • 12,000 $1.2884
  • 18,000 $1.2521
  • 24,000 $1.2158
$1.2158 / $1.3610 Buy Now
DISTI # FDMS004N08C
TME Transistor: N-MOSFET, unipolar, 80V, 80A, Idm: 637A, 125W, Power56 Min Qty: 1 0
  • 1 $2.3300
  • 5 $2.0900
  • 25 $1.8500
  • 100 $1.6800
  • 500 $1.4900
$1.4900 / $2.3300 RFQ
DISTI # FDMS004N08C
Avnet Americas PowerTrench MOSFET N-Channel Shielded Gate 80 V 126 A 4m Ohm 8-Pin Power 56 T/R - Tape and Reel (Alt: FDMS004N08C) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 24 Weeks, 0 Days Container: Reel 9000 Factory Stock
  • 3,000 $1.3610
  • 6,000 $1.3247
  • 12,000 $1.2884
  • 18,000 $1.2521
  • 24,000 $1.2158
$1.2158 / $1.3610 Buy Now
Chip 1 Exchange INSTOCK 3666
RFQ
Wuhan P&S - Min Qty: 1 2720
  • 1 $3.1700
  • 100 $2.0200
  • 500 $1.6700
  • 1,000 $1.5400
$1.5400 / $3.1700 Buy Now

Part Details for FDMS004N08C

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FDMS004N08C Part Data Attributes

FDMS004N08C onsemi
Buy Now Datasheet
Compare Parts:
FDMS004N08C onsemi N-Channel Shielded Gate PowerTrench® MOSFET 80V, 126A, 4.0mΩ, 3000-REEL
Pbfree Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ONSEMI
Package Description QFN-8
Manufacturer Package Code 483AE
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 47 Weeks
Date Of Intro 2017-02-03
Samacsys Manufacturer onsemi
Avalanche Energy Rating (Eas) 486 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 80 V
Drain Current-Max (ID) 126 A
Drain-source On Resistance-Max 0.004 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 40 pF
JEDEC-95 Code MO-240AA
JESD-30 Code R-PDSO-F5
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 5
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 125 W
Pulsed Drain Current-Max (IDM) 637 A
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 50 ns
Turn-on Time-Max (ton) 42 ns

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