There are no models available for this part yet.
Overview of FDMS2510SDC by Fairchild Semiconductor Corporation
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 1 listing )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 0 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for FDMS2510SDC by Fairchild Semiconductor Corporation
| Part # | Manufacturer | Description | Stock | Price | Buy | ||
|---|---|---|---|---|---|---|---|
| Rochester Electronics | Power Field-Effect Transistor, 28A, 25V, 0.0029ohm, 2-Element, N-Channel, MOSFET, MO-240AA ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 15037 |
|
$0.9379 / $1.1000 | Buy Now |
CAD Models for FDMS2510SDC by Fairchild Semiconductor Corporation
Part Data Attributes for FDMS2510SDC by Fairchild Semiconductor Corporation
|
|
|
|---|---|
|
Pbfree Code
|
Yes
|
|
Rohs Code
|
Yes
|
|
Part Life Cycle Code
|
Obsolete
|
|
Ihs Manufacturer
|
FAIRCHILD SEMICONDUCTOR CORP
|
|
Part Package Code
|
QFN
|
|
Package Description
|
ROHS COMPLIANT, PLASTIC, POWER 56, QFN-5
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|
Pin Count
|
8
|
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Manufacturer Package Code
|
8LD, DUAL COOL PQFN, JEDEC MO-240 AA, 5.0 X 6.0MM
|
|
Reach Compliance Code
|
not_compliant
|
|
ECCN Code
|
EAR99
|
|
Additional Feature
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ULTRA-LOW RESISTANCE
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|
Avalanche Energy Rating (Eas)
|
84 mJ
|
|
Case Connection
|
DRAIN
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Configuration
|
SINGLE WITH BUILT-IN DIODE
|
|
DS Breakdown Voltage-Min
|
25 V
|
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Drain Current-Max (ID)
|
28 A
|
|
Drain-source On Resistance-Max
|
0.0029 Ω
|
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
|
JEDEC-95 Code
|
MO-240AA
|
|
JESD-30 Code
|
R-PQCC-N5
|
|
JESD-609 Code
|
e3
|
|
Moisture Sensitivity Level
|
1
|
|
Number of Elements
|
2
|
|
Number of Terminals
|
5
|
|
Operating Mode
|
ENHANCEMENT MODE
|
|
Operating Temperature-Max
|
150 °C
|
|
Package Body Material
|
PLASTIC/EPOXY
|
|
Package Shape
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RECTANGULAR
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Package Style
|
CHIP CARRIER
|
|
Peak Reflow Temperature (Cel)
|
260
|
|
Polarity/Channel Type
|
N-CHANNEL
|
|
Power Dissipation-Max (Abs)
|
60 W
|
|
Pulsed Drain Current-Max (IDM)
|
200 A
|
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Qualification Status
|
Not Qualified
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|
Surface Mount
|
YES
|
|
Terminal Finish
|
Matte Tin (Sn)
|
|
Terminal Form
|
NO LEAD
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Terminal Position
|
QUAD
|
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Time@Peak Reflow Temperature-Max (s)
|
30
|
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Transistor Application
|
SWITCHING
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Transistor Element Material
|
SILICON
|
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