Part Details for FDMS3602S by onsemi
Overview of FDMS3602S by onsemi
- Distributor Offerings: (9 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for FDMS3602S
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
54T8337
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Newark | Dual N Channel Mosfet, 25V, 40A, Power56, Full Reel, Channel Type:N Channel, Drain Source Voltage Vds N Channel:25V, Drain Source Voltage Vds P Channel:25V, Continuous Drain Current Id N Channel:30A, No. Of Pins:8Pins Rohs Compliant: Yes |Onsemi FDMS3602S Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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Buy Now | |
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DISTI #
58T5424
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Newark | Dual N Ch Mosfet, 25V, 40A, Power56, Channel Type:N Channel, Drain Source Voltage Vds N Channel:25V, Drain Source Voltage Vds P Channel:25V, Continuous Drain Current Id N Channel:30A, Continuous Drain Current Id P Channel:30A Rohs Compliant: Yes |Onsemi FDMS3602S Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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Buy Now | |
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DISTI #
FDMS3602S
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Avnet Americas | Transistor MOSFET Array Dual N-CH 25V 65A/135A 8-Pin Power 56 T/R - Tape and Reel (Alt: FDMS3602S) RoHS: Compliant Min Qty: 491 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Reel | 13761 Partner Stock |
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$1.2648 / $1.5096 | Buy Now |
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DISTI #
FDMS3602S
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Avnet Americas | Transistor MOSFET Array Dual N-CH 25V 65A/135A 8-Pin Power 56 T/R - Tape and Reel (Alt: FDMS3602S) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0 |
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RFQ | |
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Rochester Electronics | Power Field-Effect Transistor, 15A, 25V, 0.0056ohm, 2-Element, N-Channel, MOSFET RoHS: Compliant Status: End of Life / Last Time Buy Min Qty: 1 | 1639 |
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$1.4600 / $1.7200 | Buy Now |
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DISTI #
FDMS3602S
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Avnet Americas | Transistor MOSFET Array Dual N-CH 25V 65A/135A 8-Pin Power 56 T/R - Tape and Reel (Alt: FDMS3602S) RoHS: Compliant Min Qty: 491 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Reel | 13761 Partner Stock |
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$1.2648 / $1.5096 | Buy Now |
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DISTI #
FDMS3602S
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Avnet Americas | Transistor MOSFET Array Dual N-CH 25V 65A/135A 8-Pin Power 56 T/R - Tape and Reel (Alt: FDMS3602S) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0 |
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RFQ | |
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DISTI #
2083362
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Farnell | MOSFET, NN CH, ASYMMETRIC, 25V, POWER56 RoHS: Compliant Min Qty: 1 Lead time: 29 Weeks, 1 Days Container: Each | 0 |
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$1.0821 / $2.2543 | Buy Now |
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Flip Electronics | Stock, ship today | 88507 |
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$1.0200 | RFQ |
Part Details for FDMS3602S
FDMS3602S CAD Models
FDMS3602S Part Data Attributes:
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FDMS3602S
onsemi
Buy Now
Datasheet
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Compare Parts:
FDMS3602S
onsemi
Asymmetric Dual N-Channel MOSFET PowerTrench® Power Stage, 25V, 3000-REEL
|
| Pbfree Code | Yes | |
| Part Life Cycle Code | End Of Life | |
| Ihs Manufacturer | ONSEMI | |
| Package Description | QFN-8 | |
| Manufacturer Package Code | 483AJ | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 50 mJ | |
| Case Connection | DRAIN SOURCE | |
| Configuration | SERIES, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 25 V | |
| Drain Current-Max (ID) | 15 A | |
| Drain-source On Resistance-Max | 0.0056 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-N6 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 6 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 2.5 W | |
| Pulsed Drain Current-Max (IDM) | 40 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |