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Transistors / Small Signal Field-Effect Transistors / FDMS6681Z
Datasheets
FDMS6681Z by:

P-Channel PowerTrench® MOSFET -30V, -122A, 3.2mΩ, PQFN-8, 3000-REEL

Part Details for FDMS6681Z by onsemi

Results Overview of FDMS6681Z by onsemi

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FDMS6681Z Information

FDMS6681Z by onsemi is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for FDMS6681Z

Part # Distributor Description Stock Price Buy
DISTI # 85W3148
Newark Mosfet, P Ch, 30V, 122A, Power 56-8, Channel Type:P Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:122A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Onsemi FDMS6681Z RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 2338
  • 1 $1.5400
  • 25 $1.5400
  • 50 $1.4100
  • 100 $1.4100
  • 250 $1.3000
  • 500 $1.3000
  • 1,000 $1.2100
  • 2,500 $1.1300
$1.1300 / $1.5400 Buy Now
DISTI # FDMS6681Z
Avnet Americas Trans MOSFET P-CH 30V 21.1A 8-Pin PQFN T/R - Tape and Reel (Alt: FDMS6681Z) RoHS: Compliant Min Qty: 500 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Reel 7711 Partner Stock
  • 500 $1.2820
  • 510 $1.2346
  • 1,100 $1.1905
  • 2,500 $1.1494
  • 5,000 $1.1111
$1.1111 / $1.2820 Buy Now
DISTI # FDMS6681Z
Avnet Americas Trans MOSFET P-CH 30V 21.1A 8-Pin PQFN T/R - Tape and Reel (Alt: FDMS6681Z) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Container: Reel 0
RFQ
Bristol Electronics   Min Qty: 3 259
  • 3 $1.9500
  • 12 $1.4625
  • 36 $1.2188
  • 125 $0.7312
$0.7312 / $1.9500 Buy Now
Bristol Electronics   140
RFQ
Bristol Electronics   73
RFQ
Rochester Electronics FDMS6681Z - P-Channel PowerTrench MOSFET -30V, -122A, 3.2m RoHS: Not Compliant Status: End of Life / Last Time Buy Min Qty: 1 609000
  • 1 $1.0400
  • 25 $1.0200
  • 100 $0.9776
  • 500 $0.9360
  • 1,000 $0.8840
$0.8840 / $1.0400 Buy Now
DISTI # FDMS6681Z
Avnet Silica Trans MOSFET PCH 30V 211A 8Pin PQFN TR (Alt: FDMS6681Z) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 143 Weeks, 0 Days Silica - 0
Buy Now
DISTI # FDMS6681Z
EBV Elektronik Trans MOSFET PCH 30V 211A 8Pin PQFN TR (Alt: FDMS6681Z) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 143 Weeks, 0 Days EBV - 0
Buy Now
Flip Electronics Stock, ship today 7711
RFQ

Part Details for FDMS6681Z

FDMS6681Z CAD Models

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FDMS6681Z Part Data Attributes

Parametric Data
FDMS6681Z onsemi
Buy Now Datasheet
Compare Parts:
FDMS6681Z onsemi P-Channel PowerTrench® MOSFET -30V, -122A, 3.2mΩ, PQFN-8, 3000-REEL
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer ONSEMI
Part Package Code PQFN-8
Package Description QFN-8
Manufacturer Package Code 483AE
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer onsemi
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 122 A
Drain-source On Resistance-Max 0.0032 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 2020 pF
JESD-30 Code R-PDSO-F8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 73 W
Pulsed Drain Current-Max (IDM) 600 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 732 ns
Turn-on Time-Max (ton) 85 ns

Alternate Parts for FDMS6681Z

This table gives cross-reference parts and alternative options found for FDMS6681Z. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDMS6681Z, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IRF9310TRPBF Infineon Technologies AG $0.7978 Power Field-Effect Transistor, 20A I(D), 30V, 0.0046ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8 FDMS6681Z vs IRF9310TRPBF
FDS6681Z onsemi $1.2024 30V P-Channel PowerTrench® MOSFET -20A, 4.6mΩ, SOIC-8, 2500-REEL FDMS6681Z vs FDS6681Z

FDMS6681Z Related Parts

FDMS6681Z Frequently Asked Questions (FAQ)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Keep the thermal pad connected to the ground plane to improve heat dissipation.

  • Ensure proper heat sinking, use a thermal interface material, and follow the recommended PCB layout. Also, consider derating the device's current handling capability at high temperatures.

  • The maximum allowed voltage on the enable pin (EN) is 6V. Exceeding this voltage may damage the device.

  • Yes, but ensure the device is properly bypassed and decoupled. Also, consider the device's switching losses and thermal performance at high frequencies.

  • Use a TVS diode or a zener diode to clamp the voltage and protect the device from EOS. Also, ensure proper PCB layout and routing to minimize electromagnetic interference (EMI).

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