Datasheets
FDMS6681Z by:

P-Channel PowerTrench® MOSFET -30V, -122A, 3.2mΩ, PQFN-8, 3000-REEL

Part Details for FDMS6681Z by onsemi

Results Overview of FDMS6681Z by onsemi

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FDMS6681Z Information

FDMS6681Z by onsemi is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for FDMS6681Z

Part # Distributor Description Stock Price Buy
DISTI # 85W3148
Newark Mosfet, P Ch, 30V, 122A, Power 56-8, Channel Type:P Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:122A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Onsemi FDMS6681Z RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 2898
  • 1 $1.5400
  • 25 $1.5400
  • 50 $1.4100
  • 100 $1.4100
  • 250 $1.3000
  • 500 $1.3000
  • 1,000 $1.2100
  • 2,500 $1.1300
$1.1300 / $1.5400 Buy Now
DISTI # FDMS6681Z
Avnet Americas Trans MOSFET P-CH 30V 21.1A 8-Pin PQFN T/R - Tape and Reel (Alt: FDMS6681Z) RoHS: Compliant Min Qty: 500 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Reel 3000 Partner Stock
  • 500 $1.2820
  • 510 $1.2738
  • 1,100 $1.1905
  • 2,500 $1.1494
  • 5,000 $1.1111
$1.1111 / $1.2820 Buy Now
DISTI # FDMS6681Z
Avnet Americas Trans MOSFET P-CH 30V 21.1A 8-Pin PQFN T/R - Tape and Reel (Alt: FDMS6681Z) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Container: Reel 0
RFQ
Bristol Electronics   Min Qty: 3 259
  • 3 $1.9500
  • 12 $1.4625
  • 36 $1.2188
  • 125 $0.7312
$0.7312 / $1.9500 Buy Now
Bristol Electronics   140
RFQ
Bristol Electronics   73
RFQ
Rochester Electronics FDMS6681Z - P-Channel PowerTrench MOSFET -30V, -122A, 3.2m RoHS: Not Compliant Status: End of Life / Last Time Buy Min Qty: 1 609000
  • 1 $1.0400
  • 25 $1.0200
  • 100 $0.9776
  • 500 $0.9360
  • 1,000 $0.8840
$0.8840 / $1.0400 Buy Now
DISTI # FDMS6681Z
Avnet Silica Trans MOSFET PCH 30V 211A 8Pin PQFN TR (Alt: FDMS6681Z) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 143 Weeks, 0 Days Silica - 0
Buy Now
DISTI # FDMS6681Z
EBV Elektronik Trans MOSFET PCH 30V 211A 8Pin PQFN TR (Alt: FDMS6681Z) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 143 Weeks, 0 Days EBV - 0
Buy Now
Flip Electronics Stock, ship today 7711
RFQ

Part Details for FDMS6681Z

FDMS6681Z CAD Models

FDMS6681Z Part Data Attributes

FDMS6681Z onsemi
Buy Now Datasheet
Compare Parts:
FDMS6681Z onsemi P-Channel PowerTrench® MOSFET -30V, -122A, 3.2mΩ, PQFN-8, 3000-REEL
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer ONSEMI
Part Package Code PQFN-8
Package Description QFN-8
Manufacturer Package Code 483AE
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer onsemi
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 122 A
Drain-source On Resistance-Max 0.0032 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 2020 pF
JESD-30 Code R-PDSO-F8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 73 W
Pulsed Drain Current-Max (IDM) 600 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 732 ns
Turn-on Time-Max (ton) 85 ns

FDMS6681Z Related Parts

FDMS6681Z Frequently Asked Questions (FAQ)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Keep the thermal pad connected to the ground plane to improve heat dissipation.

  • Ensure proper heat sinking, use a thermal interface material, and follow the recommended PCB layout. Also, consider derating the device's current handling capability at high temperatures.

  • The maximum allowed voltage on the enable pin (EN) is 6V. Exceeding this voltage may damage the device.

  • Yes, but ensure the device is properly bypassed and decoupled. Also, consider the device's switching losses and thermal performance at high frequencies.

  • Use a TVS diode or a zener diode to clamp the voltage and protect the device from EOS. Also, ensure proper PCB layout and routing to minimize electromagnetic interference (EMI).

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