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Transistors / Power Field-Effect Transistors / FDMS7650
Datasheets
FDMS7650 by:

N-Channel PowerTrench® MOSFET 30V, 267A, 0.99mΩ, PQFN-8, 3000-REEL

Part Details for FDMS7650 by onsemi

Results Overview of FDMS7650 by onsemi

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FDMS7650 Information

FDMS7650 by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for FDMS7650

Part # Distributor Description Stock Price Buy
DISTI # 55T6323
Newark Mosfet Transistor, N Channel, 60 A, 30 V, 0.0008 Ohm, 10 V, 1.9 V Rohs Compliant: Yes |Onsemi FDMS7650 RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape 4634
  • 1 $3.4500
  • 10 $2.4000
  • 25 $2.3400
  • 50 $2.0800
  • 100 $1.8200
  • 250 $1.6800
  • 500 $1.5400
$1.5400 / $3.4500 Buy Now
DISTI # 64R3023
Newark Mosfet Transistor, Full Reel, Channel Type:N Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:60A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1.9V, Product Range:-Rohs Compliant: Yes |Onsemi FDMS7650 RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 3,000 $1.4400
$1.4400 Buy Now
DISTI # FDMS7650
Avnet Americas Trans MOSFET N-CH 30V 36A 8-Pin Power 56 T/R - Tape and Reel (Alt: FDMS7650) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 24 Weeks, 0 Days Container: Reel 0
  • 3,000 $1.4392
  • 6,000 $1.4174
  • 12,000 $1.3956
  • 18,000 $1.3738
  • 24,000 $1.3520
$1.3520 / $1.4392 Buy Now
Bristol Electronics   400
RFQ
Rochester Electronics Power Field-Effect Transistor, 36A, 30V, 0.99ohm, N-Channel, MOSFET RoHS: Not Compliant Status: Active Min Qty: 1 2124
  • 1 $1.5100
  • 25 $1.4800
  • 100 $1.4200
  • 500 $1.3600
  • 1,000 $1.2800
$1.2800 / $1.5100 Buy Now
DISTI # FDMS7650
Richardson RFPD POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 3000 0
  • 3,000 $1.3600
$1.3600 Buy Now
DISTI # FDMS7650
Avnet Asia Trans MOSFET N-CH 30V 36A 8-Pin Power 56 T/R (Alt: FDMS7650) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 24 Weeks, 0 Days 0
  • 3,000 $1.4346
  • 6,000 $1.4160
  • 9,000 $1.3978
  • 15,000 $1.3801
  • 30,000 $1.3460
  • 75,000 $1.3136
  • 150,000 $1.2827
$1.2827 / $1.4346 Buy Now
DISTI # FDMS7650
Avnet Silica Trans MOSFET NCH 30V 36A 8Pin Power 56 TR (Alt: FDMS7650) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 25 Weeks, 0 Days Silica - 0
Buy Now
DISTI # FDMS7650
EBV Elektronik Trans MOSFET NCH 30V 36A 8Pin Power 56 TR (Alt: FDMS7650) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 26 Weeks, 0 Days EBV - 0
Buy Now

Part Details for FDMS7650

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FDMS7650 Part Data Attributes

Parametric Data
FDMS7650 onsemi
Buy Now Datasheet
Compare Parts:
FDMS7650 onsemi N-Channel PowerTrench® MOSFET 30V, 267A, 0.99mΩ, PQFN-8, 3000-REEL
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ONSEMI
Part Package Code PQFN-8
Package Description ROHS COMPLIANT, POWER 56, 8 PIN
Manufacturer Package Code 483AE
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 24 Weeks
Samacsys Manufacturer onsemi
Avalanche Energy Rating (Eas) 544 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 36 A
Drain-source On Resistance-Max 0.99 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-F5
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 5
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 104 W
Pulsed Drain Current-Max (IDM) 450 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

FDMS7650 Related Parts

FDMS7650 Frequently Asked Questions (FAQ)

  • A 4-layer PCB with a dedicated thermal layer and a thermal via array under the device is recommended. This layout helps to dissipate heat efficiently and reduces thermal resistance.

  • Implement a robust thermal management system, including a heat sink and thermal interface material. Ensure good airflow and avoid thermal hotspots. Monitor the device's junction temperature and adjust the system design accordingly.

  • Consider the heat sink's thermal resistance, material, and surface finish. A heat sink with a low thermal resistance (e.g., < 1°C/W) and a rough surface finish (e.g., black anodized) is recommended. Ensure the heat sink is compatible with the device's package and thermal interface material.

  • Use a gate drive circuit with a low output impedance and a fast rise/fall time (e.g., < 10 ns). Ensure the gate drive voltage is within the recommended range (e.g., 10-15 V). Use a gate resistor with a value between 10-50 ohms to optimize switching performance.

  • Use a common-mode choke and a differential-mode filter to reduce EMI. Implement a shielded enclosure and ensure good grounding practices. Keep sensitive components and cables away from the power stage. Use a layout that minimizes loop areas and reduces radiation.

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