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Part Details for FDMS7650 by onsemi
Results Overview of FDMS7650 by onsemi
- Distributor Offerings: (9 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
FDMS7650 Information
FDMS7650 by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for FDMS7650
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
55T6323
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Newark | Mosfet Transistor, N Channel, 60 A, 30 V, 0.0008 Ohm, 10 V, 1.9 V Rohs Compliant: Yes |Onsemi FDMS7650 RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 4634 |
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$1.5200 / $2.5500 | Buy Now |
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DISTI #
64R3023
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Newark | Mosfet Transistor, Full Reel, Channel Type:N Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:60A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1.9V, Product Range:-Rohs Compliant: Yes |Onsemi FDMS7650 RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$1.4400 | Buy Now |
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DISTI #
FDMS7650
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Avnet Americas | Trans MOSFET N-CH 30V 36A 8-Pin Power 56 T/R - Tape and Reel (Alt: FDMS7650) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 24 Weeks, 0 Days Container: Reel | 0 |
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$1.2288 / $1.2544 | Buy Now |
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Bristol Electronics | 400 |
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RFQ | ||
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Rochester Electronics | Power Field-Effect Transistor, 36A, 30V, 0.99ohm, N-Channel, MOSFET RoHS: Not Compliant Status: Active Min Qty: 1 | 2124 |
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$1.1400 / $1.4300 | Buy Now |
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DISTI #
FDMS7650
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Richardson RFPD | POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 3000 | 0 |
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$1.0600 | Buy Now |
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DISTI #
FDMS7650
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Avnet Asia | Trans MOSFET N-CH 30V 36A 8-Pin Power 56 T/R (Alt: FDMS7650) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 24 Weeks, 0 Days | 0 |
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$1.3049 / $1.4594 | Buy Now |
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DISTI #
FDMS7650
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Avnet Silica | Trans MOSFET NCH 30V 36A 8Pin Power 56 TR (Alt: FDMS7650) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 25 Weeks, 0 Days | Silica - 0 |
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Buy Now | |
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DISTI #
FDMS7650
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EBV Elektronik | Trans MOSFET NCH 30V 36A 8Pin Power 56 TR (Alt: FDMS7650) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 26 Weeks, 0 Days | EBV - 0 |
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Buy Now |
Part Details for FDMS7650
FDMS7650 CAD Models
FDMS7650 Part Data Attributes
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FDMS7650
onsemi
Buy Now
Datasheet
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Compare Parts:
FDMS7650
onsemi
N-Channel PowerTrench® MOSFET 30V, 267A, 0.99mΩ, PQFN-8, 3000-REEL
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | PQFN-8 | |
| Package Description | ROHS COMPLIANT, POWER 56, 8 PIN | |
| Manufacturer Package Code | 483AE | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 24 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 544 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 36 A | |
| Drain-source On Resistance-Max | 0.99 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-F5 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 104 W | |
| Pulsed Drain Current-Max (IDM) | 450 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
FDMS7650 Frequently Asked Questions (FAQ)
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A 4-layer PCB with a dedicated thermal layer and a thermal via array under the device is recommended. This layout helps to dissipate heat efficiently and reduces thermal resistance.
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Implement a robust thermal management system, including a heat sink and thermal interface material. Ensure good airflow and avoid thermal hotspots. Monitor the device's junction temperature and adjust the system design accordingly.
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Consider the heat sink's thermal resistance, material, and surface finish. A heat sink with a low thermal resistance (e.g., < 1°C/W) and a rough surface finish (e.g., black anodized) is recommended. Ensure the heat sink is compatible with the device's package and thermal interface material.
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Use a gate drive circuit with a low output impedance and a fast rise/fall time (e.g., < 10 ns). Ensure the gate drive voltage is within the recommended range (e.g., 10-15 V). Use a gate resistor with a value between 10-50 ohms to optimize switching performance.
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Use a common-mode choke and a differential-mode filter to reduce EMI. Implement a shielded enclosure and ensure good grounding practices. Keep sensitive components and cables away from the power stage. Use a layout that minimizes loop areas and reduces radiation.