Part Details for FDMS8020 by onsemi
Overview of FDMS8020 by onsemi
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Computing and Data Storage
Aerospace and Defense
Price & Stock for FDMS8020
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
94T9993
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Newark | Fet 30V 2.5 Mohm Pqfn56/Reel Rohs Compliant: Yes |Onsemi FDMS8020 RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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Buy Now | |
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DISTI #
96AC0023
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Newark | Fet 30V 2.5 Mohm Pqfn56 Rohs Compliant: Yes |Onsemi FDMS8020 RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.5280 / $0.6060 | Buy Now |
|
DISTI #
FDMS8020CT-ND
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DigiKey | MOSFET N-CH 30V 26A/42A 8PQFN Min Qty: 1 Lead time: 46 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
3000 In Stock |
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$0.4999 / $1.9400 | Buy Now |
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DISTI #
FDMS8020
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Avnet Americas | Trans MOSFET N-CH 30V 26A 8-Pin Power 56 T/R - Tape and Reel (Alt: FDMS8020) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Reel | 47 Partner Stock |
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RFQ | |
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DISTI #
FDMS8020
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TME | Transistor: N-MOSFET, unipolar, 30V, 83A, Idm: 507A, 65W, Power56 Min Qty: 1 | 0 |
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$0.7100 / $1.0800 | RFQ |
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Ameya Holding Limited | FDMS8020 , N沟道 MOSFET 晶体管, 131 A, Vds=30 V, 8针 Power 56封装 | 60000 |
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RFQ |
Part Details for FDMS8020
FDMS8020 CAD Models
FDMS8020 Part Data Attributes
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FDMS8020
onsemi
Buy Now
Datasheet
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Compare Parts:
FDMS8020
onsemi
N-Channel PowerTrench® MOSFET 30V, 131A, 2.5mΩ, 3000-REEL
|
| Pbfree Code | Yes | |
| Part Life Cycle Code | End Of Life | |
| Ihs Manufacturer | ONSEMI | |
| Package Description | ROHS COMPLIANT, POWER56, 8 PIN | |
| Manufacturer Package Code | 483AE | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 93 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 26 A | |
| Drain-source On Resistance-Max | 0.0025 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | MO-240AA | |
| JESD-30 Code | R-PDSO-F5 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 65 W | |
| Pulsed Drain Current-Max (IDM) | 150 A | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |