Datasheets
FDMS86101DC by:

Power Field-Effect Transistor, 14.5A I(D), 100V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA, ROHS COMPLIANT, PLASTIC, POWER 56, QFN-8

Part Details for FDMS86101DC by Fairchild Semiconductor Corporation

Overview of FDMS86101DC by Fairchild Semiconductor Corporation

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Applications Energy and Power Systems Renewable Energy

Price & Stock for FDMS86101DC

Part # Distributor Description Stock Price Buy
Win Source Electronics MOSFET N-CH 100V 14.5A 8-PQFN 435000
  • 55 $0.9330
  • 135 $0.7660
  • 205 $0.7420
  • 280 $0.7180
  • 365 $0.6940
  • 485 $0.6220
$0.6220 / $0.9330 Buy Now

Part Details for FDMS86101DC

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FDMS86101DC Part Data Attributes

FDMS86101DC Fairchild Semiconductor Corporation
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FDMS86101DC Fairchild Semiconductor Corporation Power Field-Effect Transistor, 14.5A I(D), 100V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA, ROHS COMPLIANT, PLASTIC, POWER 56, QFN-8
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code QFN
Package Description ROHS COMPLIANT, PLASTIC, POWER 56, QFN-8
Pin Count 8
Manufacturer Package Code 8LD, DUAL COOL PQFN, JEDEC MO-240 AA, 5.0 X 6.0MM
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Avalanche Energy Rating (Eas) 216 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 14.5 A
Drain-source On Resistance-Max 0.0075 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MO-240AA
JESD-30 Code R-PDSO-F5
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 5
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 125 W
Pulsed Drain Current-Max (IDM) 200 A
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FDMS86101DC

This table gives cross-reference parts and alternative options found for FDMS86101DC. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDMS86101DC, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
CSD19531Q5A 100-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 6.4 mOhm 8-VSONP -55 to 150 Texas Instruments FDMS86101DC vs CSD19531Q5A
FDMS86101A Power Field-Effect Transistor, 13A I(D), 100V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA, ROHS COMPLIANT, POWER 56, 8 PIN Fairchild Semiconductor Corporation FDMS86101DC vs FDMS86101A

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