Part Details for FDMS86150 by Fairchild Semiconductor Corporation
Overview of FDMS86150 by Fairchild Semiconductor Corporation
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Renewable Energy
Price & Stock for FDMS86150
| Part # | Distributor | Description | Stock | Price | Buy | |
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NexGen Digital | 1 |
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RFQ |
Part Details for FDMS86150
FDMS86150 CAD Models
FDMS86150 Part Data Attributes
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FDMS86150
Fairchild Semiconductor Corporation
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Datasheet
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FDMS86150
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 16A I(D), 100V, 0.00485ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA, ROHS COMPLIANT, POWER 56, 8 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Part Package Code | QFN | |
| Package Description | ROHS COMPLIANT, POWER 56, 8 PIN | |
| Pin Count | 8 | |
| Manufacturer Package Code | 8LD, PQFN, POWERCLIP SINGLE, JEDEC, MO-240, VARIATION AA, 5.0X6.0 MM | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Avalanche Energy Rating (Eas) | 726 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 16 A | |
| Drain-source On Resistance-Max | 0.00485 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | MO-240AA | |
| JESD-30 Code | R-PDSO-N5 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 156 W | |
| Pulsed Drain Current-Max (IDM) | 300 A | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FDMS86150
This table gives cross-reference parts and alternative options found for FDMS86150. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDMS86150, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| EPC2032ENGR | Power Field-Effect Transistor, 31A I(D), 100V, 0.004ohm, 1-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET, 4.60 X 2.60 MM, HALOGEN FREE AND ROHS COMPLIANT, DIE-24 | Efficient Power Conversion | FDMS86150 vs EPC2032ENGR |