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Part Details for FDMS86200 by onsemi
Overview of FDMS86200 by onsemi
- Distributor Offerings: (18 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Industrial Automation
Energy and Power Systems
Renewable Energy
Motor control systems
Price & Stock for FDMS86200
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
88T3341
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Newark | Mosfet, N Ch, 150V, 35A, Power56, Transistor Polarity:N Channel, Continuous Drain Current Id:49A, Drain Source Voltage Vds:150V, On Resistance Rds(On):0.015Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs Typ:2.5V Rohs Compliant: Yes |Onsemi FDMS86200 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 983 |
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$1.4400 / $2.7900 | Buy Now |
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DISTI #
FDMS86200
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Avnet Americas | Trans MOSFET N-CH 150V 9.6A 8-Pin Power 56 T/R - Tape and Reel (Alt: FDMS86200) RoHS: Compliant Min Qty: 625 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Reel | 17926 Partner Stock |
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$0.9412 / $1.0587 | Buy Now |
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DISTI #
FDMS86200
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Avnet Americas | Trans MOSFET N-CH 150V 9.6A 8-Pin Power 56 T/R - Tape and Reel (Alt: FDMS86200) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0 |
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$0.9787 / $1.0153 | Buy Now |
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DISTI #
FDMS86200
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Avnet Americas | Trans MOSFET N-CH 150V 9.6A 8-Pin Power 56 T/R - Tape and Reel (Alt: FDMS86200) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 17 Weeks, 0 Days Container: Reel | 0 |
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$0.9791 / $1.0149 | Buy Now |
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DISTI #
FDMS86200
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Avnet Americas | Trans MOSFET N-CH 150V 9.6A 8-Pin Power 56 T/R - Tape and Reel (Alt: FDMS86200) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 17 Weeks, 0 Days Container: Reel | 0 |
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$0.9791 / $1.0149 | Buy Now |
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Bristol Electronics | 483 |
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RFQ | ||
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DISTI #
FDMS86200
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TME | Transistor: N-MOSFET, unipolar, 150V, 36A, 104W, PQFN8 Min Qty: 1 | 0 |
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$1.2200 / $2.2700 | RFQ |
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Ameya Holding Limited | N-Channel 150 V 35 A Shielded Gate PowerTrench Mosfet - POWER56 | 13821 |
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RFQ | |
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DISTI #
FDMS86200
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Richardson RFPD | POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 3000 | 0 |
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$1.0400 | Buy Now |
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DISTI #
SMC-FDMS86200
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Sensible Micro Corporation | OEM Excess 5-7 Days Leadtime, We are an AS6081 Certified Vendor, 1 Yr Warranty RoHS: Not Compliant Min Qty: 25 Lead time: 2 Weeks, 0 Days | 200 |
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RFQ |
Part Details for FDMS86200
FDMS86200 CAD Models
FDMS86200 Part Data Attributes
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FDMS86200
onsemi
Buy Now
Datasheet
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Compare Parts:
FDMS86200
onsemi
N-Channel Power Trench® MOSFET 150V, 35A, 18mΩ, PQFN-8, 3000-REEL
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| Pbfree Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | PQFN-8 | |
| Manufacturer Package Code | 483AE | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 17 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 220 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 150 V | |
| Drain Current-Max (ID) | 9.6 A | |
| Drain-source On Resistance-Max | 0.018 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | MO-240AA | |
| JESD-30 Code | R-PDSO-F5 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 104 W | |
| Pulsed Drain Current-Max (IDM) | 100 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |