Datasheets
FDMS86200 by:

N-Channel Power Trench® MOSFET 150V, 35A, 18mΩ, PQFN-8, 3000-REEL

Part Details for FDMS86200 by onsemi

Results Overview of FDMS86200 by onsemi

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Applications Consumer Electronics Industrial Automation Energy and Power Systems Renewable Energy Motor control systems

FDMS86200 Information

FDMS86200 by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for FDMS86200

Part # Distributor Description Stock Price Buy
DISTI # 88T3341
Newark Mosfet, N Ch, 150V, 35A, Power56, Transistor Polarity:N Channel, Continuous Drain Current Id:49A, Drain Source Voltage Vds:150V, On Resistance Rds(On):0.015Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs Typ:2.5V Rohs Compliant: Yes |Onsemi FDMS86200 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 983
  • 1 $2.7900
  • 10 $2.3500
  • 100 $1.9200
  • 500 $1.6600
  • 1,000 $1.4400
$1.4400 / $2.7900 Buy Now
DISTI # FDMS86200
Avnet Americas Trans MOSFET N-CH 150V 9.6A 8-Pin Power 56 T/R - Tape and Reel (Alt: FDMS86200) RoHS: Compliant Min Qty: 625 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Reel 17926 Partner Stock
  • 625 $1.0587
  • 630 $0.9639
  • 1,300 $0.9524
  • 3,200 $0.9479
  • 6,300 $0.9412
$0.9412 / $1.0587 Buy Now
DISTI # FDMS86200
Avnet Americas Trans MOSFET N-CH 150V 9.6A 8-Pin Power 56 T/R - Tape and Reel (Alt: FDMS86200) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Container: Reel 0
  • 3,000 $1.0153
  • 6,000 $1.0028
  • 12,000 $0.9945
  • 18,000 $0.9862
  • 24,000 $0.9787
$0.9787 / $1.0153 Buy Now
DISTI # FDMS86200
Avnet Americas Trans MOSFET N-CH 150V 9.6A 8-Pin Power 56 T/R - Tape and Reel (Alt: FDMS86200) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 17 Weeks, 0 Days Container: Reel 0
  • 3,000 $1.0149
  • 6,000 $1.0027
  • 12,000 $0.9907
  • 18,000 $0.9860
  • 24,000 $0.9791
$0.9791 / $1.0149 Buy Now
Bristol Electronics   483
RFQ
DISTI # FDMS86200
TME Transistor: N-MOSFET, unipolar, 150V, 36A, 104W, PQFN8 Min Qty: 1 0
  • 1 $2.2700
  • 10 $1.9500
  • 50 $1.6400
  • 100 $1.5100
  • 500 $1.2600
  • 1,000 $1.2200
$1.2200 / $2.2700 RFQ
Ameya Holding Limited N-Channel 150 V 35 A Shielded Gate PowerTrench Mosfet - POWER56 12423
RFQ
ComSIT USA AVAILABLE EU 150
RFQ
DISTI # FDMS86200
Richardson RFPD POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 3000 0
  • 3,000 $1.0400
$1.0400 Buy Now
DISTI # SMC-FDMS86200
Sensible Micro Corporation OEM Excess 5-7 Days Leadtime, We are an AS6081 Certified Vendor, 1 Yr Warranty RoHS: Not Compliant Min Qty: 25 Lead time: 2 Weeks, 0 Days 200
RFQ
DISTI # SMC-FDMS86200
Sensible Micro Corporation N-Channel 150 V 35 A Shielded Gate Powertrench Mosfet - Power56 RoHS: Compliant Min Qty: 25 Lead time: 0 Weeks, 1 Days Date Code: 1422 Container: Tape & Reel 30
  • 100 $0.8385
  • 500 $0.8170
  • 1,000 $0.7740
$0.7740 / $0.8385 RFQ
DISTI # FDMS86200
Avnet Asia Trans MOSFET N-CH 150V 9.6A 8-Pin Power 56 T/R (Alt: FDMS86200) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 17 Weeks, 0 Days 15000
  • 3,000 $1.1603
  • 6,000 $1.1453
  • 9,000 $1.1306
  • 15,000 $1.1163
  • 30,000 $1.0887
  • 75,000 $1.0625
  • 150,000 $1.0375
$1.0375 / $1.1603 Buy Now
DISTI # FDMS86200
Avnet Silica Trans MOSFET N-CH 150V 9.6A 8-Pin Power 56 T/R (Alt: FDMS86200) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 18 Weeks, 0 Days Silica - 0
Buy Now
CHIPMALL.COM LIMITED 150V 35A 21m@6V,8.8A 104W 4V@250uA 1 N-Channel PDFN-84.9x5.8 MOSFETs ROHS 489
  • 1 $0.7225
$0.7225 Buy Now
DISTI # FDMS86200
EBV Elektronik Trans MOSFET N-CH 150V 9.6A 8-Pin Power 56 T/R (Alt: FDMS86200) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 19 Weeks, 0 Days EBV - 3000
Buy Now
Flip Electronics Stock, ship today 17926
RFQ
LCSC 150V 35A 21m6V8.8A 104W 4V250uA 1 N-channel PDFN-8(4.9x5.8) MOSFETs ROHS 1190
  • 1 $1.2708
  • 10 $1.0618
  • 30 $0.9473
  • 100 $0.8188
  • 500 $0.7616
  • 1,000 $0.7352
$0.7352 / $1.2708 Buy Now
New Advantage Corporation N-Channel 150 V 35 A Shielded Gate PowerTrench Mosfet - POWER56 RoHS: Compliant Min Qty: 1 Package Multiple: 1 5242
  • 1 $1.1100
$1.1100 Buy Now

Part Details for FDMS86200

FDMS86200 CAD Models

FDMS86200 Part Data Attributes

FDMS86200 onsemi
Buy Now Datasheet
Compare Parts:
FDMS86200 onsemi N-Channel Power Trench® MOSFET 150V, 35A, 18mΩ, PQFN-8, 3000-REEL
Pbfree Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ONSEMI
Part Package Code PQFN-8
Manufacturer Package Code 483AE
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 2 Days
Samacsys Manufacturer onsemi
Avalanche Energy Rating (Eas) 220 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 150 V
Drain Current-Max (ID) 9.6 A
Drain-source On Resistance-Max 0.018 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MO-240AA
JESD-30 Code R-PDSO-F5
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 5
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 104 W
Pulsed Drain Current-Max (IDM) 100 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

FDMS86200 Related Parts

FDMS86200 Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the FDMS86200 is -40°C to 150°C.

  • To ensure proper biasing, follow the recommended voltage and current settings outlined in the datasheet, and ensure the device is operated within the specified voltage and current ranges.

  • A good PCB layout should prioritize thermal management, with a solid ground plane, minimal thermal resistance, and adequate heat sinking. Follow onsemi's recommended PCB layout guidelines and thermal management strategies for optimal performance.

  • To troubleshoot issues, start by verifying proper biasing, checking for thermal issues, and ensuring the device is operated within specified voltage and current ranges. Consult the datasheet and onsemi's application notes for guidance on troubleshooting common issues.

  • Follow standard ESD protection procedures, such as using anti-static wrist straps, mats, and bags, and handling the device by the body rather than the leads. Consult onsemi's ESD handling guidelines for more information.

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