Datasheets
FDMS86200DC by:

Power Field-Effect Transistor, 9.3A I(D), 150V, 0.017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA, ROHS COMPLIANT, PLASTIC, POWER 56, QFN-8

Part Details for FDMS86200DC by Fairchild Semiconductor Corporation

Results Overview of FDMS86200DC by Fairchild Semiconductor Corporation

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Applications Consumer Electronics Industrial Automation Energy and Power Systems Renewable Energy Motor control systems

FDMS86200DC Information

FDMS86200DC by Fairchild Semiconductor Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for FDMS86200DC

Part # Distributor Description Stock Price Buy
Bristol Electronics   12
RFQ

Part Details for FDMS86200DC

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FDMS86200DC Part Data Attributes

FDMS86200DC Fairchild Semiconductor Corporation
Buy Now Datasheet
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FDMS86200DC Fairchild Semiconductor Corporation Power Field-Effect Transistor, 9.3A I(D), 150V, 0.017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA, ROHS COMPLIANT, PLASTIC, POWER 56, QFN-8
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code QFN
Package Description ROHS COMPLIANT, PLASTIC, POWER 56, QFN-8
Pin Count 8
Manufacturer Package Code 8LD, DUAL COOL PQFN, JEDEC MO-240 AA, 5.0 X 6.0MM
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Avalanche Energy Rating (Eas) 294 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 150 V
Drain Current-Max (ID) 9.3 A
Drain-source On Resistance-Max 0.017 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MO-240AA
JESD-30 Code R-PDSO-F5
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 5
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 125 W
Pulsed Drain Current-Max (IDM) 100 A
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

FDMS86200DC Related Parts

FDMS86200DC Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the FDMS86200DC is -40°C to 150°C.

  • To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and minimizing thermal resistance.

  • To minimize EMI, it's recommended to use a multi-layer PCB with a solid ground plane, keep the device away from noise sources, and use shielding and filtering techniques.

  • Yes, the FDMS86200DC is designed to handle high-voltage applications up to 200V. However, it's essential to ensure that the device is properly biased and that the voltage ratings are not exceeded.

  • To protect the device from ESD, it's recommended to use ESD protection devices, such as TVS diodes, and follow proper handling and storage procedures.

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