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Transistors / Power Field-Effect Transistors / FDMS86200DC
Datasheets
FDMS86200DC by:

N-Channel Dual CoolTM 56 Shielded Gate PowerTrench® MOSFET 150V, 40A, 17mΩ, DFN-8, 3000-REEL

Part Details for FDMS86200DC by onsemi

Results Overview of FDMS86200DC by onsemi

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Applications Consumer Electronics Industrial Automation Energy and Power Systems Renewable Energy Motor control systems

FDMS86200DC Information

FDMS86200DC by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for FDMS86200DC

Part # Distributor Description Stock Price Buy
DISTI # 46AC0797
Newark Mosfet, N-Ch, 150V, 40A, Dual Cool 56-8, Channel Type:N Channel, Drain Source Voltage Vds:150V, Continuous Drain Current Id:40A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3.3V Rohs Compliant: Yes |Onsemi FDMS86200DC RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape 4252
  • 1 $4.6500
  • 10 $3.2400
  • 25 $2.9600
  • 50 $2.6800
  • 100 $2.4000
  • 250 $2.2800
  • 500 $2.1400
$2.1400 / $4.6500 Buy Now
DISTI # 96W6425
Newark Fet 150V 17.0 Mohm Pqfn56/Reel Rohs Compliant: Yes |Onsemi FDMS86200DC RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 3,000 $2.4700
  • 6,000 $2.3000
  • 12,000 $2.1400
  • 18,000 $2.0600
  • 30,000 $2.0200
$2.0200 / $2.4700 Buy Now
DISTI # 29AC6271
Newark Fet 150V 17.0 Mohm Pqfn56 Rohs Compliant: Yes |Onsemi FDMS86200DC RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 3,000 $2.4700
  • 6,000 $2.3000
  • 12,000 $2.1400
  • 18,000 $2.0600
  • 30,000 $2.0200
$2.0200 / $2.4700 Buy Now
DISTI # FDMS86200DC
Avnet Americas Trans MOSFET N-CH 150V 9.3A 8-Pin Power 56 T/R - Tape and Reel (Alt: FDMS86200DC) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 8 Weeks, 0 Days Container: Reel 0
  • 3,000 $2.0027
  • 6,000 $1.9792
  • 12,000 $1.9550
  • 18,000 $1.9457
  • 24,000 $1.9320
$1.9320 / $2.0027 Buy Now
DISTI # FDMS86200DC
Avnet Americas Trans MOSFET N-CH 150V 9.3A 8-Pin Power 56 T/R - Tape and Reel (Alt: FDMS86200DC) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 8 Weeks, 0 Days Container: Reel 0
  • 3,000 $2.0027
  • 6,000 $1.9792
  • 12,000 $1.9550
  • 18,000 $1.9457
  • 24,000 $1.9320
$1.9320 / $2.0027 Buy Now
DISTI # FDMS86200DC
TME Transistor: N-MOSFET, unipolar, 150V, 40A, 125W, DFN8 Min Qty: 1 0
  • 1 $3.9900
  • 5 $3.5900
  • 25 $3.1700
  • 100 $2.8500
  • 500 $2.6600
$2.6600 / $3.9900 RFQ
DISTI # FDMS86200DC
Richardson RFPD POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 3000 0
  • 3,000 $2.0500
$2.0500 Buy Now
DISTI # FDMS86200DC
Avnet Silica Trans MOSFET NCH 150V 93A 8Pin Power 56 TR (Alt: FDMS86200DC) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 10 Weeks, 0 Days Silica - 0
Buy Now
DISTI # FDMS86200DC
EBV Elektronik Trans MOSFET NCH 150V 93A 8Pin Power 56 TR (Alt: FDMS86200DC) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 10 Weeks, 0 Days EBV - 0
Buy Now
LCSC 150V 40A 17m10V9.3A 3.2W 2V PDFN-8(5.2x6.2) MOSFETs ROHS 10
  • 1 $3.0164
  • 10 $2.9383
  • 30 $2.8878
  • 100 $2.8358
$2.8358 / $3.0164 Buy Now
Win Source Electronics MOSFET N-CH 150V 9.3A DLCOOL56 7000
  • 10 $5.4166
  • 23 $4.4444
  • 35 $4.3056
  • 48 $4.1667
  • 63 $4.0278
  • 84 $3.6111
$3.6111 / $5.4166 Buy Now

Part Details for FDMS86200DC

FDMS86200DC Part Data Attributes

Parametric Data
FDMS86200DC onsemi
Buy Now Datasheet
Compare Parts:
FDMS86200DC onsemi N-Channel Dual CoolTM 56 Shielded Gate PowerTrench® MOSFET 150V, 40A, 17mΩ, DFN-8, 3000-REEL
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ONSEMI
Part Package Code DFN-8
Package Description QFN-8
Manufacturer Package Code 506EG
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 9 Weeks
Samacsys Manufacturer onsemi
Avalanche Energy Rating (Eas) 294 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 150 V
Drain Current-Max (ID) 9.3 A
Drain-source On Resistance-Max 0.017 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MO-240AA
JESD-30 Code R-PDSO-F5
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 5
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 125 W
Pulsed Drain Current-Max (IDM) 100 A
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

FDMS86200DC Related Parts

FDMS86200DC Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the FDMS86200DC is -40°C to 150°C.

  • To ensure reliability, it's essential to follow the recommended thermal design and layout guidelines, and to ensure proper heat sinking and thermal management.

  • The maximum current rating for the FDMS86200DC is 20A per channel, with a maximum total current of 40A.

  • To protect the FDMS86200DC, it's recommended to use overvoltage protection (OVP) and overcurrent protection (OCP) circuits, and to follow the recommended layout and design guidelines.

  • The typical rise time and fall time for the FDMS86200DC are 10ns and 15ns, respectively.

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