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N-Channel Dual CoolTM 56 Shielded Gate PowerTrench® MOSFET 150V, 40A, 17mΩ, 3000-REEL
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
46AC0797
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Newark | Mosfet, N-Ch, 150V, 40A, Dual Cool 56-8, Channel Type:N Channel, Drain Source Voltage Vds:150V, Continuous Drain Current Id:40A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3.3V Rohs Compliant: Yes |Onsemi FDMS86200DC Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 5191 |
|
$2.3600 / $4.5800 | Buy Now |
DISTI #
96W6425
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Newark | Fet 150V 17.0 Mohm Pqfn56/Reel Rohs Compliant: Yes |Onsemi FDMS86200DC Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
$2.0200 / $2.4700 | Buy Now |
DISTI #
FDMS86200DCCT-ND
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DigiKey | MOSFET N-CH 150V 9.3A DLCOOL56 Min Qty: 1 Lead time: 20 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
2170 In Stock |
|
$2.1396 / $4.4000 | Buy Now |
DISTI #
FDMS86200DC
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Avnet Americas | Trans MOSFET N-CH 150V 9.3A 8-Pin Power 56 T/R - Tape and Reel (Alt: FDMS86200DC) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 20 Weeks, 0 Days Container: Reel | 0 |
|
$2.0363 / $2.4305 | Buy Now |
DISTI #
FDMS86200DC
|
Avnet Americas | Trans MOSFET N-CH 150V 9.3A 8-Pin Power 56 T/R - Tape and Reel (Alt: FDMS86200DC) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 20 Weeks, 0 Days Container: Reel | 0 |
|
$2.0035 / $2.3976 | Buy Now |
DISTI #
512-FDMS86200DC
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Mouser Electronics | MOSFET 150V/20V N Channel PowerTrench MOSFET RoHS: Compliant | 9088 |
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$2.2600 / $4.4900 | Buy Now |
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Future Electronics | Single N-Channel 150 V 3.2 W 42 nC Silicon Surface Mount Mosfet - POWER 56-8 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0Reel |
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$2.1000 | Buy Now |
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Future Electronics | Single N-Channel 150 V 3.2 W 42 nC Silicon Surface Mount Mosfet - POWER 56-8 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Cut Tape/Mini-Reel | 0Cut Tape/Mini-Reel |
|
$2.1000 / $2.5200 | Buy Now |
DISTI #
FDMS86200DC
|
Avnet Americas | Trans MOSFET N-CH 150V 9.3A 8-Pin Power 56 T/R - Tape and Reel (Alt: FDMS86200DC) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 20 Weeks, 0 Days Container: Reel | 0 |
|
$2.0035 / $2.3976 | Buy Now |
DISTI #
FDMS86200DC
|
Avnet Americas | Trans MOSFET N-CH 150V 9.3A 8-Pin Power 56 T/R - Tape and Reel (Alt: FDMS86200DC) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 20 Weeks, 0 Days Container: Reel | 0 |
|
$2.0363 / $2.4305 | Buy Now |
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FDMS86200DC
onsemi
Buy Now
Datasheet
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Compare Parts:
FDMS86200DC
onsemi
N-Channel Dual CoolTM 56 Shielded Gate PowerTrench® MOSFET 150V, 40A, 17mΩ, 3000-REEL
|
Pbfree Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ONSEMI | |
Package Description | QFN-8 | |
Manufacturer Package Code | 506EG | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 4 Weeks | |
Samacsys Manufacturer | onsemi | |
Avalanche Energy Rating (Eas) | 294 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 150 V | |
Drain Current-Max (ID) | 9.3 A | |
Drain-source On Resistance-Max | 0.017 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | MO-240AA | |
JESD-30 Code | R-PDSO-F5 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 5 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 125 W | |
Pulsed Drain Current-Max (IDM) | 100 A | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |