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N-Channel Shielded Gate PowerTrench® MOSFET 120V, 49A, 11.5mΩ, 3000-REEL
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
88T3342
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Newark | Mosfet, N Ch, 120V, 35A, Power56, Transistor Polarity:N Channel, Continuous Drain Current Id:35A, Drain Source Voltage Vds:120V, On Resistance Rds(On):0.0096Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs Typ:2.6V Rohs Compliant: Yes |Onsemi FDMS86201 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 10460 |
|
$1.2800 / $2.6900 | Buy Now |
DISTI #
85W3152
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Newark | Mosfet, N Channel, 120V, 0.0096Ohm, 35A, Power 56-8, Channel Type:N Channel, Drain Source Voltage Vds:120V, Continuous Drain Current Id:35A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Power Dissipation:104W Rohs Compliant: Yes |Onsemi FDMS86201 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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$1.6500 | Buy Now |
DISTI #
92R5566
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Newark | Mosfet Transistor, N Channel, 35 A, 120 V, 0.0096 Ohm, 10 V, 2.6 V Rohs Compliant: Yes |Onsemi FDMS86201 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
$1.0900 / $1.3800 | Buy Now |
DISTI #
FDMS86201CT-ND
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DigiKey | MOSFET N-CH 120V 11.6A/49A 8PQFN Min Qty: 1 Lead time: 20 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
11009 In Stock |
|
$1.0873 / $2.5900 | Buy Now |
DISTI #
FDMS86201
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Avnet Americas | Trans MOSFET N-CH 120V 11.6A 8-Pin Power 56 T/R - Tape and Reel (Alt: FDMS86201) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 20 Weeks, 0 Days Container: Reel | 0 |
|
$1.0785 / $1.2873 | Buy Now |
DISTI #
512-FDMS86201
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Mouser Electronics | MOSFET 120V N-Channel PowerTrench MOSFET RoHS: Compliant | 46854 |
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$1.1200 / $2.5700 | Buy Now |
DISTI #
V72:2272_06338191
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Arrow Electronics | Trans MOSFET N-CH Si 120V 11.6A 8-Pin PQFN EP T/R Min Qty: 1 Package Multiple: 1 Lead time: 20 Weeks Date Code: 2334 Container: Cut Strips | Americas - 5 |
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$1.1675 | Buy Now |
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Future Electronics | PT5 120V/20V NCH POWERTRENCH MOSFET RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0Reel |
|
$1.1200 | Buy Now |
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Future Electronics | PT5 120V/20V NCH POWERTRENCH MOSFET RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0Reel |
|
$1.1200 | Buy Now |
DISTI #
FDMS86201
|
Avnet Americas | Trans MOSFET N-CH 120V 11.6A 8-Pin Power 56 T/R - Tape and Reel (Alt: FDMS86201) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 20 Weeks, 0 Days Container: Reel | 0 |
|
$1.0785 / $1.2873 | Buy Now |
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FDMS86201
onsemi
Buy Now
Datasheet
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Compare Parts:
FDMS86201
onsemi
N-Channel Shielded Gate PowerTrench® MOSFET 120V, 49A, 11.5mΩ, 3000-REEL
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Pbfree Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ONSEMI | |
Package Description | ROHS COMPLIANT, POWER 56, 8 PIN | |
Manufacturer Package Code | 483AE | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 44 Weeks | |
Samacsys Manufacturer | onsemi | |
Avalanche Energy Rating (Eas) | 264 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 120 V | |
Drain Current-Max (ID) | 11.6 A | |
Drain-source On Resistance-Max | 0.0115 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | MO-240AA | |
JESD-30 Code | R-PDSO-F5 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 5 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 104 W | |
Pulsed Drain Current-Max (IDM) | 160 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |