Part Details for FDN5618P by Rochester Electronics LLC
Results Overview of FDN5618P by Rochester Electronics LLC
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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FDN5618P Information
FDN5618P by Rochester Electronics LLC is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part Details for FDN5618P
FDN5618P CAD Models
FDN5618P Part Data Attributes
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FDN5618P
Rochester Electronics LLC
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Datasheet
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FDN5618P
Rochester Electronics LLC
1.25A, 60V, 0.17ohm, P-CHANNEL, Si, POWER, MOSFET, SUPERSOT-3
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ROCHESTER ELECTRONICS LLC | |
Part Package Code | SOT | |
Package Description | SUPERSOT-3 | |
Pin Count | 3 | |
Manufacturer Package Code | SUPERSOT | |
Reach Compliance Code | unknown | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 1.25 A | |
Drain-source On Resistance-Max | 0.17 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 10 A | |
Qualification Status | COMMERCIAL | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for FDN5618P
This table gives cross-reference parts and alternative options found for FDN5618P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDN5618P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
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FDN5618P_NL | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 1.25A I(D), 60V, 0.17ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3 | FDN5618P vs FDN5618P_NL |
FDN5618P | onsemi | $0.1828 | 60V P-Channel PowerTrench® MOSFET -1.25A, 170mΩ, SOT-23-3, 3000-REEL | FDN5618P vs FDN5618P |