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Part Details for FDN5618P by onsemi
Results Overview of FDN5618P by onsemi
- Distributor Offerings: (19 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Renewable Energy
Automotive
FDN5618P Information
FDN5618P by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for FDN5618P
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
58K8844
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Newark | P Channel Mosfet, -60V, 1.2A Super Sot-3, Channel Type:P Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:1.25A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1.6V Rohs Compliant: Yes |Onsemi FDN5618P RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 74837 |
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$0.1130 | Buy Now |
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DISTI #
67R2065
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Newark | Mosfet, Full Reel, Channel Type:P Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:1.25A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1.6V, Power Dissipation:500Mw Rohs Compliant: Yes |Onsemi FDN5618P RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.1220 / $0.1870 | Buy Now |
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DISTI #
FDN5618P
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Avnet Americas | - Tape and Reel (Alt: FDN5618P) COO: Philippines (the) RoHS: Compliant Min Qty: 6250 Package Multiple: 1 Container: Reel | 14000 Partner Stock |
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$0.1085 / $0.1107 | Buy Now |
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DISTI #
58K8844
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Avnet Americas | - Product that comes on tape, but is not reeled (Alt: 58K8844) COO: Philippines (the) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Container: Ammo Pack | 0 |
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$0.2160 / $0.5300 | Buy Now |
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Bristol Electronics | 10159 |
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RFQ | ||
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Bristol Electronics | Min Qty: 9 | 175 |
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$0.1800 / $0.6000 | Buy Now |
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Bristol Electronics | 85 |
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RFQ | ||
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Ameya Holding Limited | P-Channel 60 V 0.170 Ohm Logic Level PowerTrench Mosfet SSOT-3 | 9000 |
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RFQ | |
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ComSIT USA | AVAILABLE EU | 3936 |
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RFQ | |
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ComSIT USA | Power Field-Effect Transistor, 1.25A I(D), 60V, 0.17ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET ECCN: EAR99 RoHS: Compliant |
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RFQ |
Part Details for FDN5618P
FDN5618P CAD Models
FDN5618P Part Data Attributes
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FDN5618P
onsemi
Buy Now
Datasheet
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Compare Parts:
FDN5618P
onsemi
60V P-Channel PowerTrench® MOSFET -1.25A, 170mΩ, SOT-23-3, 3000-REEL
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | SOT-23-3 | |
| Package Description | SUPERSOT-3 | |
| Manufacturer Package Code | 527AG | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | onsemi | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 1.25 A | |
| Drain-source On Resistance-Max | 0.17 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 0.5 W | |
| Pulsed Drain Current-Max (IDM) | 10 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
FDN5618P Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the FDN5618P is -40°C to 150°C.
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To ensure proper biasing, connect the VCC pin to a stable 5V power supply, and the GND pin to a solid ground plane. Also, ensure that the input voltage (VIN) is within the recommended range of 4.5V to 5.5V.
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To minimize EMI and noise, use a multi-layer PCB with a solid ground plane, and keep the FDN5618P away from high-frequency components. Use short, direct traces for the input and output pins, and avoid routing signals under the device.
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Yes, the FDN5618P is qualified for use in high-reliability applications, including automotive and aerospace. It meets the requirements of AEC-Q100 and is manufactured using a robust process to ensure high reliability.
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To troubleshoot issues with the FDN5618P, start by verifying the power supply voltage and ensuring that it is within the recommended range. Check for any signs of overheating, and verify that the device is properly biased. Use an oscilloscope to monitor the input and output signals, and consult the datasheet and application notes for guidance.