Part Details for FDP045N10A_F102 by Fairchild Semiconductor Corporation
Results Overview of FDP045N10A_F102 by Fairchild Semiconductor Corporation
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- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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FDP045N10A_F102 Information
FDP045N10A_F102 by Fairchild Semiconductor Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Available Datasheets
Part # | Manufacturer | Description | Datasheet |
---|---|---|---|
0603AF-102XJEW | Coilcraft Inc | General Purpose Inductor, 5%, 1 Element, Ferrite-Core, SMD, 0603, CHIP, 0603, HALOGEN FREE AND ROHS COMPLIANT | |
0603AF-102XJR | Coilcraft Inc | Not recommended for new designs. Change 'R' to 'E' for | |
0603AF-102XJE | Coilcraft Inc | RF inductor, ferrite core, 5% tol, SMT, RoHS, halogen-free |
Part Details for FDP045N10A_F102
FDP045N10A_F102 CAD Models
FDP045N10A_F102 Part Data Attributes
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FDP045N10A_F102
Fairchild Semiconductor Corporation
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FDP045N10A_F102
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 120A I(D), 100V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
Part Package Code | TO-220 | |
Package Description | ROHS COMPLIANT PACKAGE-3 | |
Pin Count | 3 | |
Manufacturer Package Code | TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB (F102) | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Additional Feature | ULTRA-LOW RESISTANCE | |
Avalanche Energy Rating (Eas) | 637 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 120 A | |
Drain-source On Resistance-Max | 0.0045 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 263 W | |
Pulsed Drain Current-Max (IDM) | 656 A | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |