Datasheets
FDP045N10A_F102 by:

N-Channel PowerTrench® MOSFET 100V, 164A, 4.5mΩ, TO-220 3L, 6400-RAIL

Part Details for FDP045N10A_F102 by onsemi

Results Overview of FDP045N10A_F102 by onsemi

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FDP045N10A_F102 Information

FDP045N10A_F102 by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Available Datasheets

Part # Manufacturer Description Datasheet
0603AF-102XJEW Coilcraft Inc General Purpose Inductor, 5%, 1 Element, Ferrite-Core, SMD, 0603, CHIP, 0603, HALOGEN FREE AND ROHS COMPLIANT
0603AF-102XJR Coilcraft Inc Not recommended for new designs. Change 'R' to 'E' for
0603AF-102XJE Coilcraft Inc RF inductor, ferrite core, 5% tol, SMT, RoHS, halogen-free

Price & Stock for FDP045N10A_F102

Part # Distributor Description Stock Price Buy
DISTI # FDP045N10A-F102
Avnet Americas Trans MOSFET N-CH 100V 164A 3-Pin(3+Tab) TO-220 - Rail/Tube (Alt: FDP045N10A-F102) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 10 Weeks, 0 Days Container: Tube 204800 Factory Stock
  • 800 $1.8471
  • 1,600 $1.8244
  • 3,200 $1.8092
  • 4,800 $1.7941
  • 6,400 $1.7805
$1.7805 / $1.8471 Buy Now

Part Details for FDP045N10A_F102

FDP045N10A_F102 CAD Models

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FDP045N10A_F102 Part Data Attributes

FDP045N10A_F102 onsemi
Buy Now Datasheet
Compare Parts:
FDP045N10A_F102 onsemi N-Channel PowerTrench® MOSFET 100V, 164A, 4.5mΩ, TO-220 3L, 6400-RAIL
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ONSEMI
Package Description ROHS COMPLIANT PACKAGE-3
Manufacturer Package Code TO220T03
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 11 Weeks
Samacsys Manufacturer onsemi
Additional Feature ULTRA-LOW RESISTANCE
Avalanche Energy Rating (Eas) 637 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 120 A
Drain-source On Resistance-Max 0.0045 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 263 W
Pulsed Drain Current-Max (IDM) 656 A
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

FDP045N10A_F102 Related Parts

FDP045N10A_F102 Frequently Asked Questions (FAQ)

  • The maximum operating temperature of the FDP045N10A_F102 is 150°C, as specified in the datasheet.

  • To ensure proper thermal management, a heat sink with a thermal resistance of less than 10°C/W is recommended. Additionally, the device should be mounted on a PCB with a thermal pad and thermal vias to dissipate heat efficiently.

  • The maximum current rating of the FDP045N10A_F102 is 45A, as specified in the datasheet. However, this rating is dependent on the device's operating temperature and the PCB's thermal design.

  • To protect the FDP045N10A_F102 from overvoltage and overcurrent, a voltage clamp or a transient voltage suppressor (TVS) can be used. Additionally, a current sense resistor and a fuse can be used to detect and respond to overcurrent conditions.

  • The recommended gate drive voltage for the FDP045N10A_F102 is between 10V and 15V, as specified in the datasheet. A higher gate drive voltage can improve the device's switching performance, but may also increase power consumption.

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