Part Details for FDP045N10A_F102 by onsemi
Results Overview of FDP045N10A_F102 by onsemi
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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FDP045N10A_F102 Information
FDP045N10A_F102 by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Available Datasheets
Part # | Manufacturer | Description | Datasheet |
---|---|---|---|
0603AF-102XJEW | Coilcraft Inc | General Purpose Inductor, 5%, 1 Element, Ferrite-Core, SMD, 0603, CHIP, 0603, HALOGEN FREE AND ROHS COMPLIANT | |
0603AF-102XJR | Coilcraft Inc | Not recommended for new designs. Change 'R' to 'E' for | |
0603AF-102XJE | Coilcraft Inc | RF inductor, ferrite core, 5% tol, SMT, RoHS, halogen-free |
Price & Stock for FDP045N10A_F102
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
FDP045N10A-F102
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Avnet Americas | Trans MOSFET N-CH 100V 164A 3-Pin(3+Tab) TO-220 - Rail/Tube (Alt: FDP045N10A-F102) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 10 Weeks, 0 Days Container: Tube | 204800 Factory Stock |
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$1.7805 / $1.8471 | Buy Now |
Part Details for FDP045N10A_F102
FDP045N10A_F102 CAD Models
FDP045N10A_F102 Part Data Attributes
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FDP045N10A_F102
onsemi
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Datasheet
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FDP045N10A_F102
onsemi
N-Channel PowerTrench® MOSFET 100V, 164A, 4.5mΩ, TO-220 3L, 6400-RAIL
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ONSEMI | |
Package Description | ROHS COMPLIANT PACKAGE-3 | |
Manufacturer Package Code | TO220T03 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 11 Weeks | |
Samacsys Manufacturer | onsemi | |
Additional Feature | ULTRA-LOW RESISTANCE | |
Avalanche Energy Rating (Eas) | 637 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 120 A | |
Drain-source On Resistance-Max | 0.0045 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 263 W | |
Pulsed Drain Current-Max (IDM) | 656 A | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |