Datasheets
FDP18N20F by:

Power Field-Effect Transistor, 18A I(D), 200V, 0.145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN

Part Details for FDP18N20F by Fairchild Semiconductor Corporation

Results Overview of FDP18N20F by Fairchild Semiconductor Corporation

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FDP18N20F Information

FDP18N20F by Fairchild Semiconductor Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Part Details for FDP18N20F

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FDP18N20F Part Data Attributes

FDP18N20F Fairchild Semiconductor Corporation
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FDP18N20F Fairchild Semiconductor Corporation Power Field-Effect Transistor, 18A I(D), 200V, 0.145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code TO-220
Package Description ROHS COMPLIANT, TO-220, 3 PIN
Pin Count 3
Manufacturer Package Code 3LD, TO220, JEDEC, MOLDED
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Avalanche Energy Rating (Eas) 324 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 18 A
Drain-source On Resistance-Max 0.145 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 100 W
Pulsed Drain Current-Max (IDM) 72 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

FDP18N20F Related Parts

FDP18N20F Frequently Asked Questions (FAQ)

  • The maximum safe operating area (SOA) for the FDP18N20F is typically defined by the manufacturer as the maximum voltage and current ratings that the device can handle without damage. For the FDP18N20F, the maximum SOA is typically around 18A and 200V.

  • To ensure proper thermal management of the FDP18N20F, it's essential to provide a good thermal path from the device to a heat sink or the PCB. This can be achieved by using a thermal interface material, such as thermal tape or thermal grease, and ensuring that the heat sink is properly attached to the device. Additionally, the PCB should be designed to dissipate heat efficiently.

  • The recommended gate drive voltage for the FDP18N20F is typically between 10V to 15V. However, it's essential to check the datasheet for the specific recommended gate drive voltage range, as it may vary depending on the application and operating conditions.

  • The FDP18N20F is a power MOSFET designed for high-frequency switching applications. However, it's essential to ensure that the device is properly driven and that the PCB is designed to minimize parasitic inductance and capacitance. Additionally, the device's switching characteristics, such as rise and fall times, should be considered to ensure that it meets the requirements of the application.

  • To protect the FDP18N20F from electrostatic discharge (ESD), it's essential to handle the device with care and follow proper ESD handling procedures. This includes using ESD-safe materials, such as ESD-safe bags and wrist straps, and ensuring that the device is properly grounded during handling and assembly.

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